High Voltage, Single and Dual Supply SPDT Analog Switch
with Enable Pin
DESCRIPTION
The DG469, DG470 are high voltage SPDT switches, with a
typical on resistance of 3.6
Ω
and typical flatness of 0.4
Ω.
The DG469, DG470 are identical, except the DG470
provides an enable input. When the enable input is activated,
both sides of the switch are in a high impedance mode (Off),
maintaining a "Safe State" at power up. This function can
also be used as a quick "disconnect" in the event of a fault
condition. For audio switching, the enable pin provides a
mute function. These are high voltage switches that are fully
specified with dual supplies at ± 4.5 V and ± 15 V and a
single supply of 12 V over an operating temperature range
from - 40 °C to + 125 °C. Fast switching speeds coupled with
high signal bandwidth makes these parts suitable for video
switching applications. All digital inputs have 0.8 V and 2.4 V
logic thresholds ensuring low voltage TTL/CMOS
compatibility. Each switch conducts equally well in both
directions when on and can handle an input signal range that
extends to the supply voltage rails. They exhibit break-
before-make switching action to prevent momentary shorting
when switching between channels. The DG469, DG470 are
offered in a MSOP 8 and SOIC 8 package.
FEATURES
•
•
•
•
•
•
•
•
•
Low on resistance (3.6
Ω
typical)
On resistance flatness (0.4
Ω
typical)
44 V supply maximum rating
RoHS
COMPLIANT
± 15 V analog signal range
Fully specified at supply voltages of ± 4.5 V, 12 V and ± 15 V
TTL/CMOS compatible
Break before make switching guaranteed
Total harmonic distortion 0.0145 %
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
Audio and video signal switching
Precision automatic test equipment
Precision data acquisition
Relay replacement
Communications systems
Automotive applications
Sample and hold systems
Power routing applications
Telecom signal switching
Medical equipment
Portable and battery power systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG469
MSOP 8 and SOIC 8
COM
NC
GND
V+
1
2
3
4
Top
View
8
NO
DG470
MSOP 8 and SOIC 8
COM
NC
GND
V+
1
2
3
4
Top
View
8 NO
7
V-
6 IN
5 EN
7
V-
6
5
IN
No
Connect
TRUTH TABLE
DG469
Logic
0
1
NC
ON
OFF
NO
OFF
ON
TRUTH TABLE
DG470
ENABLE
0
0
1
Logic
0
1
X
NC
ON
OFF
OFF
NO
OFF
ON
OFF
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
www.vishay.com
1
DG469, DG470
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
DG469, DG470
8-Pin MSOP
- 40 °C to 125 °C
a
8-Pin Narrow SOIC
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
DG469EQ-T1-E3
DG470EQ-T1-E3
DG469EY-T1-E3
DG470EY-T1-E3
Package
Part Number
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
V+ to V-
GND to V-
Digital Inputs
a
, V
S
, V
D
Continuous Current (NO, NC, or COM)
Current (Any terminal except NO, NC, or COM)
Peak Current, (Pulsed 1 ms, 10 % Duty Cycle)
Storage Temperature
Power Dissipation (Package)
b
8-Pin
MSOP
c
8-Pin Narrow SOIC
d
Limit
44
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
120
30
200
- 65 to 150
320
400
°C
mW
mA
V
Unit
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 5.0 mW/°C above 70 °C.
SPECIFICATIONS
for Dual Supplies
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
IN
= 2.4 V, 0.8 V
a
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
I
S
= 50 mA, V
D
= - 10 V to + 10 V
I
S
= 50 mA, V
D
= ± 10 V
I
S
= 50 mA, V
D
= - 5 V, 0 V, + 5 V
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
3.6
0.12
0.4
± 0.1
± 0.1
± 0.2
- 0.5
- 20
- 0.5
- 20
- 0.5
- 20
-1
-1
Typ.
c
Min.
d
- 15
Max.
d
15
6
8
0.4
0.9
0.5
0.9
0.5
20
0.5
20
0.5
20
1
1
- 0.5
- 2.5
- 0.5
- 2.5
- 0.5
-5
-1
-1
Min.
d
- 15
Max.
d
15
6
7
0.4
0.5
0.5
0.8
0.5
2.5
0.5
2.5
0.5
5
1
1
nA
Ω
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Channel On
Leakage Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Input Capacitance
e
Symbol
V
ANALOG
R
ON
ΔR
ON
R
FLATNESS
I
S(off)
V
D
= ± 14 V, V
S
= ± 14 V
I
D(off)
I
D(on)
V
S
= V
D
= ± 14 V
I
IL
I
IH
C
IN
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2.4 V
f = 1 MHz
0.05
0.05
3.7
µA
pF
www.vishay.com
2
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
DG469, DG470
Vishay Siliconix
SPECIFICATIONS
for Dual Supplies
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
IN
= 2.4 V, 0.8 V
a
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Room
Full
Room
Full
Room
Room
Room
Room
Room
f = 1 MHz
Room
Room
Room
Full
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Typ.
c
129
80
Min.
d
Max.
d
166
200
108
135
Min.
d
Max.
d
166
185
108
120
ns
Unit
Parameter
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
e
Off Isolation
e
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
Symbol
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= ± 10 V
V
S
= 10 V
R
L
= 300
Ω,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
Ω,
C
L
= 1 nF
R
L
= 50
Ω,
C
L
= 5 pF
f = 1 MHz
15
58
- 57
- 63
37
85
125
3.0
- 0.4
- 3.0
- 0.5
- 4.5
-6
-7
6
7
- 0.5
- 4.5
-6
-7
6
7
µA
pF
dB
pC
I+
I-
I
GND
SPECIFICATIONS
for Dual Supplies
Test Conditions
Unless Specified
V+ = 4.5 V, V- = - 4.5 V
V
IN
= 2.4 V, 0.8 V
a
- 45 °C to 125 °C - 40 °C to 85 °C
Parameter
Analog Switch
Analog Signal Range
e
On-Resistance
e
On-Resistance
Match
e
Symbol
V
ANALOG
R
ON
ΔR
ON
Temp.
b
Full
Typ.
c
Min.
d
- 4.5
Max.
d
4.5
11
16
0.7
0.9
265
340
163
200
Min.
d
- 4.5
Max.
d
4.5
11
15
0.7
0.8
65
310
163
185
Unit
V
Ω
I
S
= 50 mA, V
D
= - 2 V to + 2 V
I
S
= 50 mA, V
D
= ± 2 V
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Room
Full
8
0.6
Dynamic Characteristics
Turn-On Time
e
Turn-Off Time
e
Break-Before-Make
e
Time Delay
Charge Injection
e
Power Supplies
Power Supply Current
e
Negative Supply Current
e
Ground Current
e
I+
I-
I
GND
V
IN
= 0 or 4.5 V
3.0
- 0.4
3.0
- 0.5
- 4.5
-6
-7
6
7
- 0.5
- 4.5
-6
-7
6
7
µA
t
ON
t
OFF
t
D
Q
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V
V
S
= 2 V
R
L
= 300
Ω,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
Ω,
C
L
= 1 nF
245
145
15
58
pC
ns
Room
Full
Room
Full
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
www.vishay.com
3
DG469, DG470
Vishay Siliconix
SPECIFICATIONS
for Unipolar Supplies
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V
IN
= 2.4 V, 0.8 V
a
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
I
S
= 25 mA, V
D
= 0 V to + 10 V
I
S
= 25 mA, V
D
= + 10 V
I
S
= 25 mA,
V
D
= 0 V, + 5 V, + 10 V
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
Full
V
IN
= 0 or 5 V
Room
Full
Room
Full
7.5
0.4
2.5
Typ.
c
Min.
d
Max.
d
12
8.5
14
0.45
0.9
2.6
2.9
200
255
110
135
Min.
d
Max.
d
12
8.5
11.3
0.45
0.5
2.6
2.8
200
240
110
120
ns
Ω
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
On-Resistance
On-Resistance Match
On-Resistance Flatness
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
e
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
Symbol
V
ANALOG
R
ON
ΔR
ON
R
FLATNESS
t
ON
t
OFF
t
D
Q
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 10 V
V
S
= 10 V
R
L
= 300
Ω,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
Ω,
C
L
= 1 nF
190
100
50
2.4
3.0
- 0.4
- 3.0
- 0.5
- 4.5
-6
-7
pC
6
7
- 0.5
- 4.5
-6
-7
6
7
µA
I+
I-
I
GND
Notes:
a. V
IN
= input voltage to perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
