DMG50401
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For general amplification
DMG20401 in SMini6 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: A9
Basic Part Number
DSC2001 + DSA2001 (Individual)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
(C1)
6
Packaging
DMG504010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr2
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
opr
T
stg
Rating
60
50
7
100
200
–60
–50
–7
–100
–200
150
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mA
V
V
V
mA
mA
mW
°C
°C
°C
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-F3-B
SC-113DB
SOT-363
(B2)
5
(E2)
4
Tr1
Tr2
1
(E1)
2
(B1)
3
(C2)
Publication date: February 2014
Ver. EED
1
DMG50401
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance (Common base,
input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10 µA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
B
= 0
V
CE
= 10 V, I
C
= 2 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 10 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
210
0.13
150
1.5
Min
60
50
7
0.1
100
460
0.3
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance (Common base,
input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
I
E
= –10 µA, I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –10 V, I
B
= 0
V
CE
= –10 V, I
C
= –2 mA
I
C
= –100 mA, I
B
= –10 mA
V
CE
= –10 V, I
C
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
210
– 0.2
150
2
Min
–60
–50
–7
– 0.1
–100
460
– 0.5
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Ver. EED
2
DMG50401
Common characteristics chart
DMG50401_PT-Ta
P
T
T
a
200
Total power dissipation P
T
(mW)
150
100
50
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
Characteristics charts of Tr1
DMG50401(Tr1)_IC-VCE
I
C
V
CE
120
T
a
=
25°C
100
600
DMG50401(Tr1)_hFE-IC
DMG50401(Tr1)_VCEsat-IC
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
V
CE
=
10 V
V
CE(sat)
I
C
I
C
/ I
B
= 10
Forward current transfer ratio h
FE
500
T
a
=
85°C
400
300
200
100
0
0.1
25°C
−40°C
Collector current I
C
(mA)
80
60
40
20
0
I
B
=
250
µA
200
µA
150
µA
100
µA
50
µA
1
0.1
T
a
=
85°C
−40°C
25°C
0
2
4
6
8
10
12
1
10
100
0.01
0.1
1
10
100
Collector-emitter voltage V
CE
(V)
DMG50401(Tr1)_IC-VBE
Collector current I
C
(mA)
DMG50401(Tr1)_Cob-VCB
Collector current I
C
(mA)
DMG50401(Tr1)_fT-IC
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
120
V
CE
=
10 V
100
25°C
4.0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
250
V
CE
= 10 V
T
a
=
25°C
200
f
T
I
C
T
a
=
85°C
80
60
40
20
0
−40°C
3.0
Transition frequency f
T
(MHz)
Collector current I
C
(mA)
150
2.0
100
1.0
50
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
100
0
0.1
1
10
100
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Ver. EED
3
DMG50401
Characteristics charts of Tr2
DMG50401(Tr2)_IC-VCE
I
C
V
CE
−120
T
a
=
25°C
−100
I
B
= −600 µA
−500 µA
−400 µA
−300 µA
−200 µA
−100 µA
−20
0
600
V
CE
= −10
V
DMG50401(Tr2)_hFE-IC
h
FE
I
C
DMG50401(Tr2)_VCEsat-IC
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
= 10
−80
−60
−40
Forward current transfer ratio h
FE
500
400
300
25°C
200
100
0
−
0.1
−40°C
Collector current I
C
(mA)
T
a
=
85°C
−1
−
0.1
T
a
=
85°C
−40°C
25°C
−1
−10
−100
0
−2
−4
−6
−8
−10
−12
−1
−10
−100
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
DMG50401(Tr2)_IC-VBE
Collector current I
C
(mA)
DMG50401(Tr2)_Cob-VCB
Collector current I
C
(mA)
DMG50401(Tr2)_fT-IC
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
−120
V
CE
= −10
V
−100
25°C
4.0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
250
f
T
I
C
V
CE
=
−10
V
T
a
=
25°C
Transition frequency f
T
(MHz)
Collector current I
C
(mA)
T
a
=
85°C
−80
−60
−40
−20
0
−40°C
200
3.0
150
2.0
100
1.0
50
0
−
0.4
−
0.8
−1.2
0
−1
−10
−100
0
−
0.1
−1
−10
−100
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Ver. EED
4
DMG50401
SMini6-F3-B
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. EED
5
