DMN100
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
•
•
•
•
•
•
Extremely Low On-Resistance: 170mΩ @ V
GS
= 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SC59
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
Drain
SC59
D
Gate
Gate
Protection
Diode
Source
G
S
ESD PROTECTED
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 3)
Part Number
DMN100-7-F
Notes:
Case
SC59
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
M11
M11 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
2006
Code
T
Month
Code
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
YM
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN100
Document number: DS30049 Rev. 9 - 2
1 of 4
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March 2012
© Diodes Incorporated
DMN100
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
Value
30
±20
1.1
4.0
Units
V
V
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
500
250
-55 to +150
Units
mW
K/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
SOURCE-DRAIN RATINGS (BODY DIODE)
Continuous Source Current
Pulse Source Current
Forward Voltage
Reverse Recovery Time
Notes:
4. Pulse width
≤
300μs, duty cycle
≤
2%.
Symbol
BV
DSS
@ T
J
= 25°C
@ T
J
= 125°C
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
D(OFF)
t
r
t
f
I
S
I
SM
V
SD
t
rr
Min
30
—
—
1.0
—
1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.4
150
90
30
5.5
0.8
1.3
10
25
15
45
—
—
—
35
Max
—
1.0
10
±
100
3.0
0.170
0.150
⎯
—
—
—
—
—
—
—
—
—
—
0.54
4.0
1.2
—
Unit
V
μA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
=
±
12V, V
DS
= 0V
V
DS
= 10V, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 10V, I
D
= 1.0A
V
DS
= 10V, I
D
= 0.5A
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
V
DS
= 24V, I
D
= 1.0A,
V
GS
= 10V
V
DD
= 10V, I
D
= 0.5A,
V
GS
= 5.0V, R
GEN
= 50Ω
—
—
I
F
= 1.0A, V
GS
= 0V
I
F
= 1.0A, di/dt = 50A/μs
DMN100
Document number: DS30049 Rev. 9 - 2
2 of 4
www.diodes.com
March 2012
© Diodes Incorporated
DMN100
4.0
1.0
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5
I
D
, DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
5
V
GS
= 4.5V
0.1
V
GS
= 10V
0.01
0
1
3
2
I
D
, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
4
0.30
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0
50
100
150
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 3 On-Resistance vs. Junction Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
3
4
5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
0.25
0.20
0.15
0.10
0.05
0
-50
Package Outline Dimensions
A
B C
G
H
K
M
N
J
D
L
SC59
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
-
-
0.95
G
-
-
1.90
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
N
0.70
0.80
0.75
0°
8°
-
α
All Dimensions in mm
DMN100
Document number: DS30049 Rev. 9 - 2
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www.diodes.com
March 2012
© Diodes Incorporated
DMN100
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
3.4
X
0.8
Y
1.0
C
2.4
E
1.35
X
E
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN100
Document number: DS30049 Rev. 9 - 2
4 of 4
www.diodes.com
March 2012
© Diodes Incorporated
