DMN3009LFV
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (Type UX)
Product Summary
BV
DSS
R
DS(ON)
max
5.5mΩ @ V
GS
= 10V
30V
9.0mΩ @ V
GS
= 4.5V
50A
I
D
max
T
C
= +25°
C
60A
Features and Benefits
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI 3333-8 (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
®
PowerDI3333-8 (Type UX)
Pin1
S
S
S G
D
G
D
Top View
D D
D
S
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMN3009LFV-7
DMN3009LFV-13
Notes:
Case
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SH1= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
SH1
PowerDI is a registered trademark of Diodes Incorporated.
YYWW
DMN3009LFV
Document number: DS38347 Rev. 2 - 2
1 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMN3009LFV
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= 10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH (Note 8)
Avalanche Energy, L = 0.1mH (Note 8)
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
30
±20
60
50
90
60
33
58
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.0
126
2.0
62
3.5
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Steady State
Steady State
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
30
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.5
4.6
0.7
2,000
315
247
2.2
20
42
4.7
7.4
3.9
4.1
31
15
15
6.0
Max
—
1
±100
3
5.5
9.0
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 15A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, I
D
= 15A
V
DD
= 15V, V
GS
= 10V,
R
G
= 3.3Ω, , I
D
= 15A
I
F
= 15A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMN3009LFV
Document number: DS38347 Rev. 2 - 2
2 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMN3009LFV
30.0
V
GS
=3.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
=4.0V
I
D
, DRAIN CURRENT (A)
V
GS
=4.5V
20.0
V
GS
=2.5V
25
30
V
DS
=5V
20
15.0
V
GS
=10.0V
15
10.0
10
150℃
85℃
125℃
25℃
-55℃
5.0
V
GS
=2.0V
5
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.005
0.0045
V
GS
=4.5V
0.016
0.004
0.012
0.0035
0.008
I
D
=15A
0.004
0.003
V
GS
=10V
0.0025
0.002
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.008
0
0
8
12
16
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
4
20
1.8
V
GS
=4.5V
150℃
125℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
0
1.6
1.4
V
GS
=10V, I
D
=30A
85℃
25℃
-55℃
1.2
V
GS
=4.5V, I
D
=15A
1
0.8
0.6
10
15
20
25
30
I
D
, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMN3009LFV
Document number: DS38347 Rev. 2 - 2
3 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMN3009LFV
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.008
0.007
0.006
0.005
0.004
0.003
V
GS
=10V, I
D
=30A
0.002
0.001
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
10000
V
GS
=0V
25
I
S
, SOURCE CURRENT (A)
C
T
, JUNCTION CAPACITANCE (pF)
f=1MHz
V
GS
=4.5V, I
D
=15A
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2
1.7
I
D
=1mA
1.4
1.1
I
D
=250µA
0.8
0.5
0.2
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
20
C
iss
1000
15
10
T
A
=85℃
5
T
A
=150℃
T
A
=125℃
0
0
T
A
=25℃
T
A
=-55℃
1.5
C
oss
C
rss
100
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
R
DS(ON)
Limited
P
W
=100µs
30
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
I
D
, DRAIN CURRENT (A)
100
P
W
=1ms
6
V
GS
(V)
10
4
V
DS
=15V, I
D
=15A
2
1
P
W
=10ms
T
J(Max)
=150℃
P
W
=100ms
T
C
=25℃
P
W
=1s
Single Pulse
DUT on 1*MRP Board
P
W
=10s
V
GS
=10V
DC
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
0.1
0
0
5
10
20 25 30 35
Q
g
(nC)
Figure 11. Gate Charge
15
40
45
0.01
DMN3009LFV
Document number: DS38347 Rev. 2 - 2
4 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMN3009LFV
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.9
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
100
1000
R
θJA
(t)=r(t) * R
θJA
R
θJA
=130℃/W
Duty Cycle, D=t1/ t2
D=0.7
DMN3009LFV
Document number: DS38347 Rev. 2 - 2
5 of 7
www.diodes.com
March 2017
© Diodes Incorporated
