16 MEGABIT FLASH EEPROM
DPZ512X32IV3
DESCRIPTION:
The DPZ512X32IV3 ‘’VERSA-STACK’’ module is a
revolutionary new memory subsystem using Dense-Pac
Microsystems’ ceramic Stackable Leadless Chip Carriers
(SLCC) mounted on a co-fired ceramic substrate. It offers
16 Megabits of FLASH EEPROM in a single package
envelope of 1.090" x 1.090" x .470".
The DPZ512X32IV3 is built with eight SLCC packages
each containing two 128K x 8 FLASH memory devices.
Each SLCC is hermetically sealed making the module
suitable for commercial, industrial and military
applications.
By using SLCCs, the ‘’Versa-Stack’’ family of modules
offers a higher board density of memory than available
with conventional through-hole, surface mount, module
or hybrid techniques.
FEATURES:
•
•
•
•
•
•
•
Organization:
512K x 32, 1 Meg x 16
Fast Access Times (max.):
120, 150, 170, 200, 250ns
Fully Static Operation
- No clock or refresh required
TTL Compatible Inputs
and Outputs
Common Data Inputs
and Outputs
10,000 Erase/Program
Cycles (min.)
66 - Pin PGA ‘’VERSA-STACK’’
Package
FUNCTIONAL BLOCK DIAGRAM
PIN-OUT DIAGRAM
PIN NAMES
A0 - A16
I/O0 - I/O31
CE0 - CE7
WE0, WE1
OE
V
PP
V
DD
V
SS
N.C.
Address Inputs
Data Input/Output
Chip Enables
Write Enables
Output Enable
Programming
Voltage (+12.0V)
Power (+5V)
Ground
No Connect
30A072-12
REV. C
This document contains information on a product that is currently released
to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
1
DPZ512X32IV3
DEVICE OPERATION:
The FLASH devices are electrically erasable and
programmable memories that function similarly to an EPROM
device, but can be erased without being removed from the
system and exposed to ultraviolet light. Each 128K x 8 device
can be erased individually eliminating the need to re-program
the entire module when partial code changes are required.
Dense-Pac Microsystems, Inc.
margin voltage to the location just written. After waiting 6µs
the data written can be verified by doing a read. If true data
is read from the device, the location write was successful and
the next location may be programmed.
If the device fails to verify, the program/verify operation is
repeated up to 25 times.
READ:
With V
PP
= 0V to V
DD
(V
PPLO
),
the devices are read-only
memories and can be read like a standard EPROM. By
selecting the device to be read
(see Truth Table and
Functional Block Diagram),
the data programmed into the
device will appear on the appropriate I/O pins.
When V
PP
= +12.0V
±
0.6V
(V
PPHI
),
reads can be
accomplished in the same manner as described above but
must be preceded by writing 00H
1
to the command register
prior to reading the device. When V
PP
is raised to V
PPHI
the
contents of the command register default to 00H
1
and remain
that way until the command register is altered.
ERASE:
The erase function is a command-only operation and can only
be executed while V
PP
= V
PPHI
.
To setup the chip-erase, 20H
1
must be written to the
command register. The chip-erase is then executed by once
again writing 20H
1
to the command register
(see AC
Operating and Characteristics Table).
To ensure a reliable erasure, all bits in the device to be erased
should be programmed to their charged state
(data = 00H)
prior to starting the erase operation. With the algorithm
provided, this operation should typically take 2 seconds.
HIGH PERFORMANCE PARALLEL ERASURE:
Dense-Pac recommends that all users implement the
following Intel High Performance Parallel Erase algorithm
in order to avoid the possibility of over erasing these parts.
In applications containing more than one FLASH memory,
you can erase each device serially or you can reduce total
erase time by implementing a parallel erase algorithm. You
may save time by erasing all devices at the same time.
However, since FLASH memories may erase at different rates,
you must verify each device separately. This can be done in
a word-wise fashion with the Command Register Reset
Command and a special masking algorithm.
Take for example the case of two-device (parallel) erasure.
The CPU first writes the data word erase command 2020H
twice in succession. This starts erasure. After 10ms, the CPU
writes the data word verify command A0A0H to stop erasure
and setup erase verification. If both one or both bytes are not
erased at the given address, the CPU implements the erase
sequence again without incrementing the address.
Suppose at the given address only the low byte verifies FFH
data? Could the whole chip be erased? The answer is yes.
Rather than check the rest of the low byte addresses
independently of the high byte, simply use the reset
command to mask the low byte from erasure and erase
verification on the next erase loop. In this example the erase
command would be 20FFH and the verify command would
be A0FFH. Once the high byte verifies at the address, the
CPU modifies the command back to the default 2020H and
A0A0H, increments to the next address, and then writes the
verify command.
See Figure 4 for a conceptual view of the parallel erase flow
chart and Figure 4 for the detailed version. These flow charts
are for the 16-bit systems and can be expanded for 32-bit
designs.
STANDBY:
When the appropriate CE‘s are raised to a logic-high level, the
standby operation disables the FLASH devices reducing the
power consumption substantially. The outputs are placed in
a high- impedance state, independent of the OE input. If the
module is deselected during programming or erase, the
device upon which the operation was being performed will
continue to draw active current until the operation is
completed.
PROGRAM:
The programming and erasing functions are accessed via the
command register when high voltage is applied to V
PP
. The
contents of the command register control the functions of the
memory device
(see Command Definition Table).
The command register is not an addressable memory
location. The register stores the address, data, and command
information required to execute the command. When V
PP
=
V
PPLO
the command register is reset to 00H
1
returning the
device to the read-only mode.
The command register is written by enabling the device upon
which that the operation is to be performed
(see Functional
Block Diagram).
While the device is enabled bring WE to a
logic-low (V
IL
). The address is latched on the falling edge of
WE and data is latched on the rising edge of WE.
1
Programming is initiated by writing 40H
(program setup
command)
to the command register. On the next falling edge
of WE the address to be programmed will be latched,
followed by the data being latched on the rising edge of WE
(see AC Operating and Characteristics Table).
PROGRAM VERIFY:
The FLASH devices are programmed one location at a time.
Each location may be programmed sequentially or at random.
Following each programming operation, the data written
must be verified.
1
To initiate the program-verify mode, C0H must be written to
the command register of the device just programmed. The
programming operation is terminated on the rising edge of
WE. The program-verify command is then written to the
command register.
After the program-verify command is written to the command
register, the memory device applies an internally generated
ERASE VERIFY:
The erase operation erases all locations in the device selected
in parallel. Upon completion of the erase operation, each
location must be verified. This operation is initiated by writing
A0H
1
to the command register. The address to be verified
must be supplied in order to be latched on the falling edge of
WE.
The memory device internally generates a margin voltage and
applies it to the addressed location. If FFH is read from the
2
30A072-12
REV. C
Dense-Pac Microsystems, Inc.
device, it indicates the location is erased. The erase/verify
command is issued prior to each location verification to latch
the address of the location to be verified. This continues until
FFH is not read from the device or the last address for the
device being erased is read.
If FFH is not read from the location being verified, an
additional erase operation is performed. Verification then
resumes from the last location verified. Once all locations in
the device being erased are verified, the erase operation is
complete. The verify operation should now be terminated by
writing a valid command such as program set-up to the
command register.
DPZ512X32IV3
a read from address location 0000H outputs the
manufacturer’s code (89H). A read from address location
0001H outputs the device code (B4H). To terminate the
operation, it is necessary to write another valid command into
the register.
POWER UP/DOWN PROTECTION:
The FLASH devices are designed to protect against accidental
erasure or programming during power transitions. It makes
no difference as to which power supply, V
PP
or V
DD,
powers
up first. Power supply sequencing is not required. Internal
circuitry ensures that the command register is reset to the read
mode upon power up.
PRODUCT I.D. OPERATION:
The product I.D. operation outputs the manufacturer code
(89H) and the device code (B4H). This allows programming
equipment to match the device with the proper erase and
programming algorithms.
With CE and OE at a logic low level, raising A9 to V
ID
(see
DC Operating Characteristics)
will initiate the operation. The
manufacturer’s code can then be read from address location
0000H and the device code can be read from address location
0001H.
The I.D. codes can also be accessed via the command
register. Following a write of 90H to the command register,
POWER SUPPLY DECOUPLING:
V
PP
traces should use trace widths and layout considerations
comparable to that of the V
DD
power bus. The V
PP
supply
traces should also be decoupled to help decrease voltage
spikes.
While the memory module has high-frequency,
low-inductance decoupling capacitors mounted on the
substrate connected to V
DD
and V
SS
, it is recommended that
a 4.7µF to 10µF electrolytic capacitor be placed near the
memory module connected across V
DD
and V
SS
for bulk
storage. Decoupling capacitors should also be placed near
the module, connected across V
PP
and V
SS
.
COMMAND DEFINITION TABLE
Command
Read Memory
Setup Erase / Erase
Erase Verify
Setup Program / Program
Program Verify
Reset
Read Product I.D. Codes
EA =
EVD =
IA =
ID =
Bus
Cycles
Req’d
1
2
2
2
2
2
3
First Bus Cycle
Operation
Write
Write
Write
Write
Write
Write
Write
Address
X
X
EA
X
X
X
X
Data
00H
20H
A0H
40H
C0H
FFH
90H
1
Second Bus Cycle
Operation
-
Write
Read
Write
Read
Write
Read
Address
-
X
X
PA
X
X
IA
Data
-
20H
EVD
PD
PVD
FFH
ID
1
Address to Verify
Data Read from Location EA
Address: 0000H for manufacturing code, 0001H for device code
ID data read from IA during product ID operation
(Manufacturer = 89H, Device = B4H)
PA = Address to Program
PD = Data to be Programmed at Location PA
PVA = Data to be Read from Location PA at Program Verify
TRUTH TABLE
Mode
Description
Not Selected
READ
ONLY
Output Disable
Read
I.D. (Mfr.)
I.D. (Device)
Not Selected
COMMAND
PROGRAM
Output Disable
Read
Write
L = LOW, H = HIGH, X = Don’t Care
30A072-12
REV. C
CEn
H
L
L
L
L
H
L
L
L
WEn
X
H
H
H
H
X
H
H
L
OE
X
H
L
L
L
X
H
L
H
A0
X
X
A0
L
H
X
X
A0
A0
A9
X
X
A9
V
ID
V
ID
X
X
A9
A9
V
PP
V
PPLO
V
PPLO
V
PPLO
V
PPLO
V
PPLO
V
PPHI
V
PPHI
V
PPHI
V
PPHI
I/O Pins
HIGH-Z
HIGH-Z
D
OUT
D
OUT
=89H
D
OUT
= B4H
HIGH-Z
HIGH-Z
D
OUT
D
IN
Supply Current
Standby
Active
Active
Active
Active
Standby
Active
Active
Active
3
DPZ512X32IV3
Dense-Pac Microsystems, Inc.
RECOMMENDED OPERATING RANGE
Symbol
V
DD
V
PP
V
IL
V
IH
T
A
V
ID
2
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
°C
V
7
Characteristic
Supply Voltage
Programming Voltage
Input LOW Voltage
Input HIGH Voltage
Operating
Temperature
C
I
M/B
Min. Typ.
4.5
11.4
-0.5
3
2.0
0
-40
-55
11.5
+25
+25
+25
5.0
12.0
Max.
5.5
12.6
0.8
V
DD
+0.5
+70
+85
+125
13.0
Symbol
T
STC
T
BIAS
V
ID
I
OUT
V
I/O
V
PP
V
DD
Parameter
Storage Temperature
Temperature Under Bias
Voltage on A9
Output Short
Circuit Current
Input/Output Voltage
2
V
PP
Supply Voltage
During Erase/Program
Supply Voltage
2
2
2
Value
-65 to +150
-55 to +125
-0.5 to +14.0
4, 5
100
6
-0.5 to +7.0
3
-0.5 to +14.0
4
-0.6 to +7.0
4
Unit
°C
°C
V
mA
V
V
V
A9 I.D. Input/Output
CAPACITANCE
7
: T
A
= 25°C, F = 1.0MHz
Symbol
C
ADR
C
CE
C
WE
C
OE
C
I/O
Parameter
Address Input
Chip Enable
Write Enable
Output Enable
Data Input/Output
Max.
100
20
50
100
50
Unit
Condition
Symbol
V
OH
V
OL
DC OUTPUT CHARACTERISTICS
Parameter
HIGH Voltage
LOW Voltage
Condition
I
OH
= -2.5mA
I
OL
=5.8mA
Min. Max. Unit
2.4
0.45
V
V
pF
V
IN3
= 0V
DC OPERATING CHARACTERISTICS: Over operating ranges
Symbol
I
IN
I
OUT
I
CC1
I
CC2
I
CC3
I
SB1
I
SB2
I
PPS
I
PP1
I
PP2
I
PP3
I
ID
Characteristics
Input Leakage Current
Output Leakage Current
Operating Supply Current
V
DD
Programming Current
V
DD
Erase Current
Standby Current (TTL)
Full Standby Supply Current (CMOS)
V
PP
Leakage Current
V
PP
Read Current
V
PP
Programming Current
V
PP
Erase Current
A9 I.D. Current
Test Conditions
V
IN
= 0V to V
DD
V
I/O
= 0V to V
DD
,
CE or OE = V
IH
, or WE = V
IL
CE = V
IL
, V
IN
= V
IL
or V
IH
,
I
OUT
= 0mA, f = 8MHz
Programming in Progress
Erasure in Progress
CE = V
IH
CE = V
DD
-0.2V
V
PP
= V
PPLO
V
PP
= V
PPHI
V
PP
= V
PPHI
, Programming in Progress
V
PP
= V
PPHI
, Erasure in Progress
A9 = V
ID
, CE = OE = V
IL
, WE = V
IH
Limits
Min.
-16
-40
Max.
+16
+40
130
130
130
16
1.6
160
3.2
125
125
2.0
Unit
µA
µA
mA
mA
mA
mA
mA
µA
mA
mA
mA
mA
4
30A072-12
REV. C
Dense-Pac Microsystems, Inc.
DPZ512X32IV3
Figure 1.
Output Load
* Including Probe and Jig Capacitance.
AC TEST CONDITIONS
Input Pulse Levels
Input Pulse Rise and Fall Times
Input and Output
Timing Reference Levels
Output Timing Reference
Levels During Verify
0V to 3.0V
5ns
1.5V
0.8V and +2.4V
1.3V
1N914
3.3K
Ω
D
OUT
C
L
*
OUTPUT LOAD
Load
1
2
DEVICE
UNDER
TEST
C
L
100 pF
30pF
Parameters Measured
except t
DF
, t
LZ
and t
OLZ
t
DF
, t
LZ
and t
OLZ
AC OPERATING CONDITIONS AND CHARACTERISTICS - READ CYCLE:
Over operating ranges
No. Symbol
1
2
3
4
5
6
7
8
t
RC
t
CE
t
ACC
t
OE
t
LZ
t
OLZ
t
DF
t
OH
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
Chip Enable to Output in LOW-Z
7, 8
7, 8
Parameter
120ns
150ns
170ns
200ns
250ns
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
120
150
170
200
250
120
120
50
0
0
30
0
0
0
0
35
0
150
150
55
0
0
40
0
170
170
60
0
0
45
0
200
200
60
0
0
60
250
250
65
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Output Enable to Output in LOW-Z
Output Disable to Output in HIGH-Z
7, 8
Output Hold from Address, CE or OE Change
(whichever occurs first)
AC OPERATING CONDITIONS AND CHARACTERISTICS - WRITE CYCLE:
Over operating ranges
No. Symbol
9
10
11
12
13
14
15
16
17
18
19
20
21
22
t
WC
t
AS
t
AH
t
DS
t
DH
t
WR
t
RR
t
CS
t
CH
t
WP
t
WPH
t
DP
t
DE
t
VPEL
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Recovery Time before Read
Read Recover Time before Write
Chip Enable Setup Time before Write
Chip Enable Hold Time
Write Pulse Width
9
9
Parameter
120ns
150ns
170ns
200ns
250ns
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
120
150
170
200
250
0
60
50
10
6
0
20
0
80
20
10
9.5
4
Unit
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
µs
0
60
50
10
6
0
20
0
80
20
10
10.5
9.5
1.0
10.5
0
60
50
10
6
0
20
0
80
20
10
9.5
1.0
10.5
0
60
50
10
6
0
20
0
80
20
10
9.5
1.0
10.5
0
60
50
10
6
0
20
0
80
20
10
9.5
1.0
10.5
Write Pulse Width HIGH
Duration of Programming Operation
Duration of Erase Operation
V
PP
Setup Time to Chip Enable LOW
ms
µs
1.0
30A072-12
REV. C
5
