This product complies with the RoHS Directive (EU 2002/95/EC).
DRC2143Y
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2143Y
Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini3-G3-B
Name
Pin
1: Base
2: Emitter
3: Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: N7
Internal Connection
Unit
V
V
mA
mW
°C
°C
Resistance value
R
1
R
2
4.7
22
kΩ
kΩ
B
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
200
150
–55 to +150
R
1
R
2
C
E
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.17
4.7
0.21
1.2
0.5
+30%
0.27
60
Min
50
50
0.1
0.5
0.4
200
0.25
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2010
Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DRC2143Y
DRC2143Y_PT-Ta
DRC2143Y_IC-VCE
DRC2143Y_hFE-IC
P
T
T
a
300
120
T
a
=
25°C
100
I
C
V
CE
400
I
B
=
350
µA
300
µA
250
µA
200
µA
150
µA
100
µA
50
µA
V
CE
=
10 V
h
FE
I
C
Total power dissipation P
T
(mW)
200
150
100
50
0
80
60
40
20
0
Forward current transfer ratio h
FE
250
Collector current I
C
(mA)
300
T
a
=
85°C
200
25°C
−30°C
100
0
40
80
120
160
200
0
2
4
6
8
10
12
Ambient temperature T
a
(
°C
)
DRC2143Y_VCEsat-IC
0
0.1
1
10
100
Collector-emitter voltage V
CE
(V)
DRC2143Y_I
O
-V
IN
Collector current I
C
(mA)
DRC2143Y_VIN-IO
V
CE(sat)
I
C
I
O
V
IN
10
V
O
=
5 V
100
V
O
=
0.2 V
V
IN
I
O
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 20
Output current I
O
(mA)
Input voltage V
IN
(V)
1
T
a
=
85°C
10
−1
25°C
−30°C
1
10
0.1
T
a
=
85°C
25°C
−30°C
25°C
1
T
a
= −30°C
85°C
10
−2
0.01
0.1
1
10
100
10
−3
0
0.4
0.8
1.2
0.1
0.1
1
10
100
Collector current I
C
(mA)
Input voltage V
IN
(V)
Output current I
O
(mA)
2
Ver. BED
This product complies with the RoHS Directive (EU 2002/95/EC).
DRC2143Y
Mini3-G3-B
Unit: mm
0.40
−0.05
3
+0.10
0.16
−0.06
+0.10
1.50
−0.05
+0.25
2.8
−0.3
+0.2
1
2
(0.95)
1.9
±0.1
(0.95)
+0.20
2.90
−0.05
10
°
(0.65)
+0.2
0 to 0.1
1.1
−0.1
1.1
−0.1
+0.3
5
°
0.4
±0.2
Ver. BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
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life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202