DSA90C200HR
Schottky Diode Gen ²
V
RRM
I
FAV
V
F
=
= 2x
=
200 V
45 A
0.79 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA90C200HR
Backside: isolated
1
2
3
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
ISO247
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Backside: DCB ceramic
●
Reduced weight
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130909b
© 2013 IXYS all rights reserved
DSA90C200HR
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.49
5.5
0.7
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
24 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
394
215
600
V
mΩ
K/W
K/W
W
A
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max.
200
200
2
5
0.91
1.10
0.79
1.03
45
Unit
V
V
mA
mA
V
V
V
V
A
V
R
= 200 V
V
R
= 200 V
I
F
=
I
F
=
I
F
=
I
F
=
45 A
90 A
45 A
90 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 145°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130909b
© 2013 IXYS all rights reserved
DSA90C200HR
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
mounting torque
mounting force with clip
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
ISO247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
70
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
mm
mm
V
V
6
0.8
20
2.7
4.1
3600
3000
1.2
120
Product Marking
Part number
D
S
A
90
C
200
HR
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
ISO247 (3)
Logo
Part Number
DateCode
Assembly Code
Assembly Line
abcdef
YYWWZ
000000
Ordering
Standard
Part Number
DSA90C200HR
Marking on Product
DSA90C200HR
Delivery Mode
Tube
Quantity
30
Code No.
508368
Similar Part
DSSK60-02AR
DSSK60-02A
Package
ISOPLUS247 (3)
TO-247AD (3)
Voltage class
200
200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.49
2.9
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130909b
© 2013 IXYS all rights reserved
DSA90C200HR
Outlines ISO247
E
Q
A
A2
A3
S
Ø
P
2x
E3
2x D3
Dim.
D
2x
E2
D1
4
1
L1
E1
L
2
3
D2
2x
b2
b4
2x
e
3x
b
C
A1
Millimeter
min
max
A
4.70
5.30
A1 2.21
2.59
A2 1.50
2.49
A3
typ. 0.05
b
0.99
1.40
b2 1.65
2.39
b4 2.59
3.43
c
0.38
0.89
D 20.79 21.45
D1
typ. 8.90
D2
typ. 2.90
D3
typ. 1.00
E 15.49 16.24
E1
typ. 13.45
E2 4.31
5.48
E3
typ. 4.00
e
5.46 BSC
L
19.80 20.30
L1
-
4.49
Ø P 3.55
3.65
Q
5.38
6.19
S
6.14 BSC
Inches
min
max
0.185 0.209
0.087 0.102
0.059 0.098
typ. 0.002
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.819 0.844
typ. 0.350
typ. 0.114
typ. 0.039
0.610 0.639
typ. 0.530
0.170 0.216
typ. 0.157
0.215 BSC
0.780 0.799
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130909b
© 2013 IXYS all rights reserved
DSA90C200HR
Schottky
100
100
T
VJ
=175°C
150°C
10000
10
I
F
10
I
R
T
VJ
=
175°C
125°C
25°C
1
125°C
C
T
1000
[mA]
0.1
100°C
75°C
[A]
[pF]
0.01
50°C
25°C
T
VJ
= 25°C
1
0.0
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
150
100
0
50
100
150
V
F
[V]
Fig. 1 Max. forward voltage
drop characteristics
V
R
[V]
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
V
R
[V]
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
80
60
60
50
40
30
d=
DC
0.5
0.33
0.25
0.17
0.08
I
F(AV)
40
d = 0.5
DC
P
(AV)
[W]
[A]
20
20
10
0
0
40
80
120
160
0
0
10
20
30
40
50
60
70
T
C
[°C]
Fig. 4 Avg. forward current
I
F(AV)
vs. case temp. T
C
I
F(AV)
[A]
Fig. 5 Forward power loss
characteristics
1
Z
thJH
0.1
R
thi
0.041
0.087
0.258
0.486
0.078
t
i
0.0002
0.0065
0.037
0.182
2.43
[K/W]
0.01
0.001
Note: All curves are per diode
0.01
0.1
1
10
t [s]
Fig. 6 Transient thermal impedance junction to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130909b
© 2013 IXYS all rights reserved
