DSC2G02
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
High transition frequency f
T
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: C5
Packaging
DSC2G02×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
opr
T
stg
Rating
30
20
3
15
200
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
*1
Transition frequency
Reverse transfer capacitance
(Common emitter)
Power gain
Noise figure
2. *
1: Rank classification
Code
Rank
h
FE
Marking Symbol
C
C
65 to 160
C5C
D
D
100 to 260
C5D
0
No-rank
65 to 260
C5
Symbol
V
CBO
V
EBO
V
BE
h
FE
f
T
C
re
PG
NF
Conditions
I
C
= 10
mA,
I
E
= 0
I
E
= 10
mA,
I
C
= 0
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA , f = 10.7 MHz
V
CE
= 6 V, I
C
= 1 mA , f = 100 MHz
V
CE
= 6 V, I
C
= 1 mA , f = 100 MHz
Min
30
3
Typ
Max
Unit
V
V
0.72
65
450
650
0.6
24
3.3
260
V
MHz
pF
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2014
Ver. BED
1
DSC2G02
DSC2G02_PC-Ta
DSC2G02_IC-VCE
DSC2G02_hFE-IC
P
C
T
a
250
20
I
C
V
CE
200
T
a
=
25°C
h
FE
I
C
V
CE
=
6 V
160
T
a
=
85°C
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
200
16
I
B
=
120
µA
12
110
µA
100
µA
90
µA
80
µA
70
µA
60
µA
50
µA
40
µA
30
µA
Forward current transfer ratio h
FE
150
120
25°C
−40°C
100
8
80
50
4
40
0
0
40
80
120
160
200
0
0
2
4
6
8
10
12
0
10
−1
1
10
10
2
Ambient temperature T
a
(
°C
)
DSC2G02_VCEsat-IC
Collector-emitter voltage V
CE
(V)
DSC2G02_IC-VBE
Collector current I
C
(mA)
DSC2G02_Cob-VCB
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 10
20
V
CE
=
6 V
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
2.0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
25°C
Collector current I
C
(mA)
15
1.6
1
T
a
=
85°C
10
−40°C
5
1.2
10
−1
25°C
T
a
=
85°C
0.8
−40°C
0.4
10
−2
10
−1
1
10
10
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
100
Collector current I
C
(mA)
DSC2G02_fT-IC
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
f
T
I
C
1 600
V
CE
= 6 V
T
a
=
25°C
Transition frequency f
T
(MHz)
1 200
800
400
0
10
−1
1
10
10
2
Collector current I
C
(mA)
Ver. BED
2
DSC2G02
Mini3-G3-B
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. BED
3
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
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the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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Authorized Distributor
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