This product complies with the RoHS Directive (EU 2002/95/EC).
DSC3G03
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC5G03 in SSSMini3 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
High transition frequency f
T
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SSSMini3-F2-B
Name
Pin
1. Base
2. Emitter
3. Collector
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
3
50
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Marking Symbol: C6
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
*
Reverse transfer capacitance
(Common emitter)
Reverse transfer capacitance
(Common base)
Power gain
Symbol
V
CBO
V
EBO
V
BE
h
FE
f
T
C
re
C
rb
PG
Conditions
I
C
= 100
mA,
I
E
= 0
I
E
= 10
mA,
I
C
= 0
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 10 V, I
C
= 15 mA
V
CE
= 10 V, I
C
= 1 mA , f = 10.7 MHz
V
CB
= 6 V, I
C
= 0 , f = 1 MHz
V
CE
= 10 V, I
C
= 1 mA , f = 200 MHz
25
800
0.9
0.7
20
Min
30
3
740
250
1 600
Typ
Max
Unit
V
V
mV
MHz
pF
pF
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: September 2010
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC3G03
DSC3G03_PC-Ta
DSC3G03_IC-VCE
DSC3G03_hFE-IC
200
P
C
T
a
125
60
T
a
=
25°C
I
C
V
CE
700
µA
600
µA
800
µA
500
µA
400
µA
30
20
10
0
300
µA
200
µA
100
µA
h
FE
I
C
V
CE
=
10 V
Collector power dissipation P
C
(mW)
Forward current transfer ratio h
FE
Collector current I
C
(mA)
100
50
40
160
T
a
=
85°C
I
B
=
900
µA
75
120
25°C
−30°C
50
80
25
40
0
0
40
80
120
160
200
0
2
4
6
8
10
12
0
10
−1
1
10
10
2
Ambient temperature T
a
(
°C
)
DSC3G03_VCEsat-IC
Collector-emitter voltage V
CE
(V)
DSC3G03_IC-VBE
Collector current I
C
(mA)
DSC3G03_Cob-VCB
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 10
50
V
CE
=
10 V
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
2.0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector current I
C
(mA)
40
25°C
30
T
a
=
85°C
20
−30°C
1.6
1
1.2
10
−1
25°C
T
a
=
85°C
0.8
−30°C
10
0.4
10
−2
10
−1
1
10
10
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
100
Collector current I
C
(mA)
DSC3G03_fT-IC
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
f
T
I
C
1 600
V
CE
= 10 V
T
a
=
25°C
Transition frequency f
T
(MHz)
1 200
800
400
0
10
−1
1
10
10
2
Collector current I
C
(mA)
2
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC3G03
SSSMini3-F2-B
Unit: mm
0.30
−
0.02
3
+0.05
0.80
±0.05
1.20
±0.05
1
2
0.20
−
0.02
(0.4)
(0.4)
+0.05
(5°)
0.20
±0.05
1.20
±0.05
0.13
−
0.02
+0.05
0.80
±0.05
(5°)
0 to 0.05
0.52
±0.03
(0.27)
Ver. AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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Consult our sales staff in advance for information on the following applications:
–
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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20100202