This product complies with the RoHS Directive (EU 2002/95/EC).
DSC7102
Silicon NPN epitaxial planar type
For low frequency amplification
DSC8102 in MiniP3 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
MiniP3-F2-B
Package dimension clicks here.→
Click!
Packaging
DSC7102×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
80
80
5
1
1.5
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Name
Pin
1. Base
2. Collector
3. Emitter
Marking Symbol: 5D
Note) Printed circuit board: Copper foil area of 1 cm
2
or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for P
C
is 0.5 W
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 40 V, I
E
= 0
V
CE
= 2 V, I
C
= 100 mA
V
CE
= 2 V, I
C
= 500 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 10 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
120
60
0.15
0.9
180
8
20
0.30
1.2
Min
80
80
5
0.1
340
Typ
Max
Unit
V
V
V
mA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Rank
h
FE1
Marking Symbol
R
R
120 to 240
5DR
S
S
170 to 340
5DS
Publication date: May 2012
Ver. CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC7102
DSC7102_PC-Ta
1 250
DSC7102_IC-VCE
DSC7102_hFE-IC
400
P
C
T
a
Copper plate at the collector is
more than 1.0 cm
2
in area, 1.7 mm
in thickness.
I
C
V
CE
1 000
T
a
=
25°C
I
B
=
8 mA
7 mA
6 mA 5 mA
h
FE
I
C
V
CE
=
2 V
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
1 000
800
Forward current transfer ratio h
FE
300
T
a
=
85°C
25°C
750
600
4 mA
3 mA
2 mA
200
500
400
1 mA
−30°C
250
200
100
0
0
40
80
120
160
200
0
0
4
8
12
0
1
10
10
2
10
3
Collector current T
a
(
°C
)
DSC7102_VCEsat-IC
Collector-emitter voltage V
CE
(V)
DSC7102_IC-VBE
Collector current I
C
(mA)
DSC7102_Cob-VCB
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 10
1 000
V
CE
=
2 V
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
30
25
20
15
10
5
0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
1
Collector current I
C
(mA)
800
T
a
=
85°C
600
25°C
10
−1
T
a
=
85°C
−30°C
25°C
1
10
10
2
10
3
400
−30°C
200
10
−2
0
0
0.4
0.8
1.2
1
10
100
Collector current I
C
(mA)
DSC7102_fT-IC
Base-emitter voltage V
BE
(V)
DSC7102_VBEsat-IC
Collector-base voltage V
CB
(V)
f
T
I
C
350
300
250
200
150
100
50
0
10
V
BE(sat)
I
C
10
2
Base-emitter saturation voltage V
BE(sat)
(V)
V
CB
= 10 V
T
a
=
25°C
I
C
/ I
B
= 10
Transition frequency f
T
(MHz)
10
1
T
a
= −30°C
85°C
25°C
0
10
2
10
3
10
4
1
10
10
2
10
3
Collector current I
C
(mA)
Collector current I
C
(mA)
2
Ver. CED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
FPGA/CPLD
