DSP8-12A
Standard Rectifier
V
RRM
I
FAV
V
F
= 2x 1200 V
=
=
8A
1.08 V
Phase leg
Part number
DSP8-12A
Backside: anode/cathode
1
2/4
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
TO-220
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107b
© 2013 IXYS all rights reserved
DSP8-12A
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.79
33
1.5
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
4
100
120
130
100
110
72
70
50
50
V
mΩ
K/W
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max.
1300
1200
10
0.2
1.16
1.35
1.08
1.34
8
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
I
F
=
I
F
=
8A
16 A
8A
16 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 160°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 400 V f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107b
© 2013 IXYS all rights reserved
DSP8-12A
Package
Symbol
I
RMS
T
stg
T
VJ
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-220
Definition
RMS current
storage temperature
virtual junction temperature
Ratings
Conditions
per terminal
min.
-55
-55
typ.
max.
25
150
175
Unit
A
°C
°C
g
Nm
N
2
0.4
20
0.6
60
Product Marking
Part Number
Logo
Date Code
Lot #
Assembly Line
abcdef
YYWW Z
XXXXXX
Ordering
Standard
Part Number
DSP8-12A
Marking on Product
DSP8-12A
Delivery Mode
Tube
Quantity
50
Code No.
465062
Similar Part
DSP8-12AC
DSP8-12S
DSP8-12AS
DSP8-08A
DSP8-08S
DSP8-08AS
Package
ISOPLUS220AB (3)
TO-263AB (D2Pak) (2)
TO-263AA (D2Pak) (3)
TO-220AB (3)
TO-263AB (D2Pak) (2)
TO-263AA (D2Pak) (3)
Voltage class
1200
1200
1200
800
800
800
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 175°C
V
0 max
R
0 max
0.79
30
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107b
© 2013 IXYS all rights reserved
DSP8-12A
Outlines TO-220
Dim.
A
A1
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
C
A2
ØP
Q
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
2.54
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.100
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
Q
E
ØP
4
1
2
3
3x b2
L1
3x b
2x e
L
1
D
H1
2/4
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107b
© 2013 IXYS all rights reserved
DSP8-12A
Rectifier
20
100
50 Hz, 80% V
RRM
10
2
V
R
= 0 V
16
80
T
VJ
= 45°C
T
VJ
= 45°C
I
F
[A]
12
T
VJ
= 150°C
125°C
8
25°C
4
I
FSM
[A]
60
T
VJ
= 150°C
It
[A s]
2
2
T
VJ
= 150°C
0
0.6
0.8
1.0
1.2
1.4
1.6
40
0.001
10
1
0.01
0.1
1
1
2
3
4 5 6 7 8 10
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
t [s]
Fig. 2 Surge overload current
2
t [ms]
Fig. 3 I t versus time per diode
28
16
DC =
1
0.5
0.4
0.33
0.17
0.08
12
P
tot
8
R
thJA
:
4 K/W
8 K/W
10 K/W
12 K/W
16 K/W
20 K/W
24
20
I
F(AV)M
16
DC =
1
0.5
0.4
0.33
0.17
0.08
[A]
12
8
[W]
4
4
0
0
2
4
6
8
10
12
0
25
50
75 100 125 150 175 200
0
0
50
100
150
200
I
F(AV)M
[A]
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation vs. direct output current and ambient temperature
1.6
1.2
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
0.0005
0.0095
0.17
0.8
0.00001
Z
thJC
0.8
1 0.155
2 0.332
3 0.713
4 0.3
5 0.00001
[K/W]
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107b
© 2013 IXYS all rights reserved
