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DTA114EEBHZGTL

Bipolar Transistors - Pre-Biased PNP SOT-416FL 10kO Input Resist

器件类别:分立半导体    晶体管   

厂商名称:ROHM(罗姆半导体)

厂商官网:https://www.rohm.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ROHM(罗姆半导体)
包装说明
SC-89, 3 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
13 weeks
其他特性
BUILT IN BIAS RESISTANCE RATIO IS 1.0
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
30
JESD-30 代码
R-PDSO-F3
湿度敏感等级
1
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
参考标准
AEC-Q101
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
文档预览
DTA114EEB HZG
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
AEC-Q101 Qualified
l
Outline
Parameter
V
CC
I
C(MAX.)
R
1
R
2
l
Features
Value
-50V
-100mA
10kΩ
10kΩ
SOT-416FL
SC-89
 
 
 
 
 
 
(EMT3F)
     
               
 
l
Inner circuit
1) Built-In Biasing Resistors, R
1
= R
2
= 10kΩ
2) Built-in bias resistors enable the configuration of
 
an inverter circuit without connecting external
 
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 
for operation, making the circuit design easy.
4) Complementary NPN Types: DTC114EEB HZG
l
Application
INVERTER, INTERFACE, DRIVER
l
Packaging specifications
                                           
Part No.
Package
SOT-416FL
(EMT3F)
Package
size
1616
Taping
code
TL
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
8
3000
Marking
DTA114EEB HZG
14
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
20160725 - Rev.001
DTA114EEB HZG
 
        
Datasheet
l
Absolute maximum ratings
(T
a
= 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)*1
P
D*2
T
j
T
stg
Values
-50
-40 to 10
-50
-100
150
150
-55 to +150
Unit
V
V
mA
mA
mW
l
Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Symbol
V
I(off)
Input voltage
V
I(on)
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T*1
Conditions
Min.
V
CC
= -5V, I
O
= -100μA
V
O
= -0.3V, I
O
= -10mA
I
O
= -10mA, I
I
= -0.5mA
V
I
= -5V
V
CC
= -50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
-
-
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
-
-3.0
-
-
-
30
7
0.8
-
Typ.
-
-
-100
-
-
-
10
1.0
250
Max.
-0.5
V
-
-300
-880
-500
-
13
1.2
-
mV
μA
nA
-
-
MHz
Unit
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
                                            
 
                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
20160725 - Rev.001
DTA114EEB HZG
 
 
        
Datasheet
l
Electrical characteristic curves
(T
a
=25°C)
Fig.1 Input voltage vs. output current (ON
characteristics)
Fig.2 Output current vs. input voltage (OFF
characteristics)
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/5
20160725 - Rev.001
DTA114EEB HZG
 
 
        
Datasheet
l
Electrical characteristic curves
(T
a
=25°C)
Fig.5 Output voltage vs. output current
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/5
20160725 - Rev.001
DTA114EEB HZG
l
Dimensions
 
        
Datasheet
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/5
20160725 - Rev.001
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