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DTA144E-AL3-R

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)

器件类别：分立半导体    晶体管   

厂商名称：UNISONIC TECHNOLOGIES CO.,LTD

厂商官网：http://www.unisonic.com.tw/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码
SC-70
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
制造商包装代码
SOT323
Reach Compliance Code
compli
ECCN代码
EAR99
Is Samacsys
N
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)
0.03 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
68
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
Base Number Matches
1
文档预览
UNISONIC TECHNOLOGIES CO., LTD
DTA144E
DIGITAL TRANSISTORS
(BUILT-IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation
to allow positive input.
PNP SILICON TRANSISTOR
3
2
3
1
SOT-23
2
3
1
SOT-323
EQUIVALENT CIRCUIT
2
R1
IN
R2
GND(+)
IN
GND(+)
OUT
OUT
1
SOT-523
*Pb-free plating product number:DTA144EL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTA144E-AE3-R
DTA144EL-AE3-R
DTA144E-AL3-R
DTA144EL-AL3-R
DTA144E-AN3-R
DTA144EL-AN3-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
Tape Reel
DTA144EL-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
AE4
For SOT -23/ SOT-323/SOT -523 Package
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-051,B
DTA144E
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
SOT-523
SOT-23/SOT-323
SYMBOL
V
CC
V
IN
I
OUT
I
O(MAX)
P
D
PNP SILICON TRANSISTOR
RATING
-50
-40~+10
-30
-100
150
200
150
-55~+150
UNIT
V
V
mA
mW
mW
°C
°C
T
J
T
STG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified.)
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
SYMBOL
V
IN(OFF)
V
IN(ON)
V
OUT(ON)
I
IN
I
OUT(OFF)
TEST CONDITIONS
V
CC
= -5V, I
OUT
= -100μA
V
OUT
= -0.3V, I
OUT
= -2mA
I
OUT
/I
IN
= -10mA/-0.5 mA
V
IN
= -5V
V
CC
= -50V , V
IN
=0V
V
OUT
= -5V, I
OUT
= -5mA
68
32.9
0.8
MIN
-3
-0.1
-0.3
-0.18
-0.5
TYP
MAX
-0.5
UNIT
V
V
V
mA
µA
DC Current Gain
h
FE
Input Resistance
R
1
Resistance Ratio
R
2
/R
1
Transition Frequency
f
T
*Transition frequency of the device.
V
CE
= -10 V, I
E
=5mA, f=100MHz*
47
1
250
61.1
1.2
kΩ
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-051,B
DTA144E
■
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Input Voltage vs. Output Current
(ON Characteristics)
-100
-50
-10
Output Current vs. Input Voltage
(OFF Characteristics)
-5
-2
Vo
UT
=-0.3V
Output Current, Io
UT
(mA)
Vcc=-5V
Ta= 100℃
25℃
-40℃
Input Voltage, V
IN (ON)
(V)
-20
-10
-5
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-0.005
-2
-1
-500m
Ta= - 40℃
25℃
100℃
-200m
-100m
-0.1
-0.2
-0.5 -1
-2
-5
-10
-20
-50
-100
-0.002
-0.001
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Output Current, Io
UT
(mA)
Input Voltage, V
IN (OFF)
(V)
DC Current Gain vs. Output Current
1k
500
-1000
Output Voltage vs. Output Current
lo
UT
/l
IN
=20
Ta= 100℃
25℃
-40℃
Vo
UT
=-5V
Ta= 100℃
25℃
-40℃
Output Voltage, V
OUT (ON)
(mV)
-500
200
-200
-100
-50
DC Current Gain, h
FE
100
50
20
10
5
-20
-10
-5
2
1
-0.1
-0.2
-0.5 -1
-2
-5
-10
-20
-50
-100
-2
-1
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50
-100
Output Current, Io
UT
(mA)
Output Current, Io
UT
(mA)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R206-051,B
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参数对比
与DTA144E-AL3-R相近的元器件有：DTA144E、DTA144E-AE3-R、DTA144E-AN3-R、DTA144EL-AL3-R、DTA144EL-AN3-R、DTA144EL-AE3-R。描述及对比如下：
型号 DTA144E-AL3-R DTA144E DTA144E-AE3-R DTA144E-AN3-R DTA144EL-AL3-R DTA144EL-AN3-R DTA144EL-AE3-R
描述 DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Code compli compli compli compli compli compli compli
最大集电极电流 (IC) 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
最小直流电流增益 (hFE) 68 68 68 68 68 68 68
元件数量 1 1 1 1 1 1 1
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP
表面贴装 YES YES YES YES YES YES YES
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
包装说明 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 - 3 3 3 3 3
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N - - -
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 1 - BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
集电极-发射极最大电压 50 V - 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
JESD-30 代码 R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
端子数量 3 - 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
端子形式 GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL - DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
标称过渡频率 (fT) 250 MHz - 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 1 1 - - -
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