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DTC023EMT2L

Bipolar Transistors - Pre-Biased NPN Digital Transtr w/built in resistors

器件类别:分立半导体    晶体管   

厂商名称:ROHM(罗姆半导体)

厂商官网:https://www.rohm.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ROHM(罗姆半导体)
包装说明
SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
13 weeks
其他特性
BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
20
JESD-30 代码
R-PDSO-F3
湿度敏感等级
1
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
NPN
最大功率耗散 (Abs)
0.15 W
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
10
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
文档预览
DTC023E series
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
l
Outline
Parameter
V
CC
I
C(MAX.)
R
1
R
2
Value
50V
100mA
2.2kΩ
2.2kΩ
SOT-723
SOT-416FL
 
DTC023EM
(VMT3)
SOT-323FL
 
DTC023EEB
(EMT3F)
     
               
l
Features
1) Built-In Biasing Resistors, R
1
= R
2
= 2.2kΩ
2) Built-in bias resistors enable the configuration of
 
an inverter circuit without connecting external
 
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 
for operation, making the circuit design easy.
4) Complementary PNP Types: DTA023E series
 
DTC023EUB
(UMT3F)
     
               
 
 
 
 
 
l
Inner circuit
l
Application
INVERTER, INTERFACE, DRIVER
l
Packaging specifications
                                           
Part No.
Package
SOT-723
(VMT3)
SOT-416FL
(EMT3F)
SOT-323FL
(UMT3F)
Package
size
1212
1616
2021
Taping
code
T2L
TL
TL
Reel size Tape width
(mm)
(mm)
180
180
180
8
8
8
Basic
ordering
unit.(pcs)
8000
3000
3000
Marking
DTC023EM
DTC023EEB
DTC023EUB
65
65
65
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/7
20160426 - Rev.003
DTC023E series
 
        
Datasheet
l
Absolute maximum ratings
(T
a
= 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
DTC023EM
Power dissipation
DTC023EEB
DTC023EUB
Junction temperature
Range of storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)*1
Values
50
12 to -10
100
100
150
Unit
V
V
mA
mA
P
D*2
150
200
mW
T
j
T
stg
150
-55 to +150
l
Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Symbol
V
I(off)
Input voltage
V
I(on)
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T*1
Conditions
Min.
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 5mA
I
O
= 10mA, I
I
= 1mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 10V, I
O
= 20mA
-
-
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
-
2.6
-
-
-
20
1.54
0.8
-
Typ.
-
-
80
-
-
-
2.2
1.0
250
Max.
0.8
V
-
200
3.6
500
-
2.86
1.2
-
mV
mA
nA
-
-
MHz
Unit
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
                                            
 
                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/7
20160426 - Rev.003
DTC023E series
 
 
        
Datasheet
l
Electrical characteristic curves
(T
a
=25°C)
Fig.1 Input voltage vs. output current (ON
characteristics)
Fig.2 Output current vs. input voltage (OFF
characteristics)
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/7
20160426 - Rev.003
DTC023E series
 
 
        
Datasheet
l
Electrical characteristic curves
(T
a
=25°C)
Fig.5 Output voltage vs. output current
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/7
20160426 - Rev.003
DTC023E series
l
Dimensions
      
        
Datasheet
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/7
20160426 - Rev.003
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