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DTC114EE

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, SC-75A, 3 PIN

器件类别:晶体管   

厂商名称:Tak Cheong

厂商官网:http://www.takcheong.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Tak Cheong
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
35
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
PRE LIM INAR Y DA TAS HEET
SOT-523 Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
Green Product
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors: a
series base resistor and a base-emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The device is
designed for low power surface mount applications.
3
Absolute Maximum Ratings
(
T
A
= 25°C unless otherwise noted)
Symbol
V
CBO
V
CEO
I
C
P
D
R
θJA
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction & Storage Temperature Range
Value
50
50
100
150
600
-55 to +150
Units
V
V
mA
mW
°C /W
°C
SOT-523 (SC-75A)
2
1
These ratings are limiting values above which the serviceability of the device may be impaired.
Specification Features:
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Weight: approx. 0.002g
Electrical Symbol:
DB Number: DB-250
Nov. 2013, Preliminary Datasheet
Page 1
DTC114EE to DTC123JE Series
TAK CHEONG
®
TAK CHEONG
Device Marking & Resistor Values:
®
PRE LIM INAR Y DA TAS HEET
Device
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
Marking
24
25
26
64
04
03
22
23
E23
45
E42
R1 (KΩ)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
R2 (KΩ)
10
22
47
47
2.2
4.7
47
47
47
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Off Characteristics
Symbol
I
CBO
I
CEO
I
EBO
Parameter
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
Test Condition
V
CB
=50V, I
E
=0A
V
CE
=50V, I
B
=0A
V
EB
=6.0V, I
C
=0A
Limits
Min
-
-
Typ
-
-
Max
100
500
Unit
nA
nA
-
-
-
-
-
-
-
-
-
-
-
I
C
=10uA, I
E
=0A
I
C
=2.0mAA, I
B
=0A
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
0.50
0.20
0.10
0.20
0.90
1.90
2.30
1.50
0.18
0.13
0.20
-
-
Volts
Volts
mA
V
(BR)CBO
V
(BR)CEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note 1)
Note 1: Pulse Test. Pulse width <300us, Duty cycle < 2.0%)
DB Number: DB-250
Nov. 2013, Preliminary Datasheet
Page 2
TAK CHEONG
On Characteristics
(Note 1)
Symbol
H
FE
®
PRE LIM INAR Y DA TAS HEET
Parameter
DC Current Dain
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
Test Condition
V
CE
=10V, I
C
=5.0mA
Limits
Min
35
60
80
80
160
160
8.0
15
80
80
80
Typ
60
100
140
140
350
350
15
30
200
150
140
Max
-
-
-
-
-
-
Unit
mA
V
CE(sat)
Collector-Emitter Saturation Voltage
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
I
C
=10mA, I
B
=0.3mA
I
C
=10mA, I
B
=0.3mA
I
C
=10mA, I
B
=0.3mA
I
C
=10mA, I
B
=0.3mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
D
=5mA
I
C
=10mA, I
D
=1mA
I
C
=10mA, I
D
=1mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=0.3mA
R
L
= 1.0KΩ
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=3.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
V
CC
=5.0V, V
B
=2.5V
--
--
0.20
Volts
--
--
0.25
Volts
V
OL
Output Voltage (on)
DB Number: DB-250
Nov. 2013, Preliminary Datasheet
Page 3
TAK CHEONG
On Characteristics
®
PRE LIM INAR Y DA TAS HEET
Symbol
V
OH
Parameter
Output Voltage (on)
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
Test Condition
R
L
= 1.0KΩ
V
CC
=5.0V, V
B
=0.5V
V
CC
=5.0V, V
B
=0.5V
V
CC
=5.0V, V
B
=0.5V
V
CC
=5.0V, V
B
=0.5V
V
CC
=5.0V, V
B
=0.25V
V
CC
=5.0V, V
B
=0.25V
V
CC
=5.0V, V
B
=0.5V
V
CC
=5.0V, V
B
=0.5V
V
CC
=5.0V, V
B
=0.25V
V
CC
=5.0V, V
B
=0.5V
V
CC
=5.0V, V
B
=0.5V
Limits
Min
Typ
Max
Unit
4.9
--
--
Volts
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
R1
Characteristic
Input Resistor
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
Min
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
0.8
0.8
0.8
0.17
-
-
0.8
0.8
0.055
0.38
0.038
Typ
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
1.0
1.0
1.0
0.21
-
-
1.0
1.0
0.1
0.47
0.047
Max
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
1.2
1.2
1.2
0.25
-
-
1.2
1.2
0.185
0.56
0.056
Unit
KΩ
R1/R2
Resistor Ratio
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
--
DB Number: DB-250
Nov. 2013, Preliminary Datasheet
Page 4
TAK CHEONG
®
PRE LIM INAR Y DA TAS HEET
SOT-523 Package Outline
DIM
A
A1
A2
b1
b2
c
D
E
E1
Typical Soldering Pattern:
e
e1
L
L1
θ
MILLIMETERS
MIN
0.70
0.00
0.70
0.15
0.25
0.10
1.50
0.70
1.45
MAX
0.90
0.10
0.80
0.25
0.35
0.20
1.70
0.90
1.75
MIN
INCHES
MAX
0.035
0.004
0.031
0.010
0.014
0.008
0.067
0.035
0.069
0.028
0.000
0.028
0.006
0.010
0.004
0.059
0.028
0.057
0.50 TYP.
0.90
1.10
0.020 TYP.
0.035
0.043
0.40 REF.
0.10
0
O
0.016 REF.
0.004
0
O
0.30
8
O
0.012
8
O
NOTES:
1. Above package outline conforms to JEITA EAIJ ED-7500A SC-75A.
2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.
DB Number: DB-250
Nov. 2013, Preliminary Datasheet
Page 5
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