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DTC114T

PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23
PRE-BIASED ""数字"" 晶体管,100MA I(C),SOT-23

器件类别：分立半导体    晶体管   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
TO-92
包装说明
TO-226AA, 3 PIN
针数
3
Reach Compliance Code
_compli
ECCN代码
EAR99
Is Samacsys
N
其他特性
BUILT IN BIAS RESISTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
160
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e0
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
0.35 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
DTC114E SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C
(1.)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
350
2.81
mW
mW/°C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
2
BASE
COLLECTOR
3
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient (surface mounted)
Operating and Storage
Temperature Range
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
Symbol
R
θJA
T
J
, T
stg
T
L
260
10
Value
357
–55 to
+150
Unit
°C/W
°C
1
2
3
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
Marking
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
Shipping
5000/Box
CASE 29
TO–92 (TO–226)
STYLE 1
Preferred
devices are recommended choices for future use
and best overall value.
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
©
Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 0
Publication Order Number:
DTC114E/D
DTC114E SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter–Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
I
CBO
I
CEO
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
—
—
nAdc
nAdc
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector–Emitter Breakdown Voltage
(2.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(2.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
—
60
100
140
140
350
350
5.0
15
30
200
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector–Emitter Saturation Voltage
(I
C
= 10 mA, I
E
= 0.3 mA) DTC144E/DTC114Y
(I
C
= 10 mA, I
B
= 0.3 mA)
DTD113E/DTC143E
(I
C
= 10 mA, I
B
= 5 mA) DTC123E
(I
C
= 10 mA, I
B
= 1 mA) DTC114T/DTC143T/
(I
C
= 10 mA, I
B
= 1 mA)
DTC143Z/DTC124E
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
DTC114E
DTC124E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC144E
V
CE(sat)
V
OL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
http://onsemi.com
2
DTC114E SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC123E
DTC143E
DTD113E
DTC114T
DTC143T
DTC143Z
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC114E/DTC124E/DTC144E
DTC114Y
DTC114T/DTC143T
DTD113E/DTC123E/DTC143E
DTC143Z
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.17
—
0.8
0.055
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
1.0
0.21
—
1.0
0.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
1.2
0.25
—
1.2
0.185
kΩ
Symbol
V
OH
Min
4.9
Typ
—
Max
—
Unit
Vdc
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
Input Resistor
Resistor Ratio
R
1
/R
2
http://onsemi.com
3
DTC114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114E
250
PD , POWER DISSIPATION (MILLIWATTS)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= –25°C
25°C
75°C
200
0.1
150
100
R
θJA
= 625°C/W
0.01
50
0
–50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
0.001
0
20
40
60
I
C
, COLLECTOR CURRENT (mA)
80
Figure 1. Derating Curve
Figure 2. V
CE(sat)
versus I
C
1000
h FE, DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
Cob , CAPACITANCE (pF)
T
A
= 75°C
25°C
–25°C
100
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
3
2
1
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
IC , COLLECTOR CURRENT (mA)
25°C
T
A
= –25°C
10
V
O
= 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
T
A
= –25°C
25°C
75°C
1
10
1
0.1
0.01
V
O
= 5 V
0
1
2
5
6
7
3
4
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0.001
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 5. V
CE(sat)
versus I
C
Figure 6. V
CE(sat)
versus I
C
http://onsemi.com
4
DTC114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTC124E
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= –25°C
25°C
75°C
h FE, DC CURRENT GAIN (NORMALIZED)
1000
V
CE
= 10 V
T
A
= 75°C
25°C
–25°C
100
0.1
0.01
–
0.001
0
40
20
60
I
C
, COLLECTOR CURRENT (mA)
80
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
25°C
T
A
= –25°C
Cob , CAPACITANCE (pF)
3
IC , COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
V
O
= 5 V
0
2
4
6
8
10
0
0
10
20
30
40
50
0.001
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O
= 0.2 V
Vin , INPUT VOLTAGE (VOLTS)
T
A
= –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
5
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参数对比
与DTC114T相近的元器件有：DTC114E、DTC114Y、DTC123E、DTC124E、DTC143E、DTC143T、DTC143Z、DTC144E、DTD113E。描述及对比如下：
型号 DTC114T DTC114E DTC114Y DTC123E DTC124E DTC143E DTC143T DTC143Z DTC144E DTD113E
描述 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED ""DIGITAL"" TRANSISTOR,100MA I(C),SOT-23
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
包装说明 TO-226AA, 3 PIN TO-226AA, 3 PIN TO-226AA, 3 PIN CYLINDRICAL, O-PBCY-T3 TO-226AA, 3 PIN TO-226AA, 3 PIN TO-226AA, 3 PIN TO-226AA, 3 PIN TO-226AA, 3 PIN TO-226AA, 3 PIN
针数 3 3 3 3 3 3 3 3 3 3
Reach Compliance Code _compli _compli _compli _compli _compli _compli _compli _compli _compli _compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR RATIO IS 10 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 160 35 80 8 60 15 160 80 80 3
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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