DTC114TCA,DTC114TCA pdf中文资料,DTC114TCA引脚图,DTC114TCA电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否Rohs认证

不符合

厂商名称

Micro Commercial Components (MCC)

零件包装代码

SOT-23

包装说明

SMALL OUTLINE, R-PDSO-G3

针数

Reach Compliance Code

compliant

ECCN代码

EAR99

其他特性

BUILT-IN BIAS RESISTOR

最大集电极电流 (IC)

0.1 A

集电极-发射极最大电压

50 V

配置

SINGLE WITH BUILT-IN RESISTOR

最小直流电流增益 (hFE)

100

JESD-30 代码

R-PDSO-G3

JESD-609代码

元件数量

端子数量

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE

峰值回流温度（摄氏度）

240

极性/信道类型

NPN

认证状态

Not Qualified

表面贴装

YES

端子面层

TIN LEAD

端子形式

GULL WING

端子位置

DUAL

处于峰值回流温度下的最长时间

晶体管应用

SWITCHING

晶体管元件材料

SILICON

标称过渡频率 (fT)

250 MHz

文档预览

MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

DTC114TCA

Features

•

Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making

device design easy

NPN Digital Transistor

SOT-23

Absolute Maximum Ratings

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current-Continuous

Collector Dissipation

Junction Temperature

Storage Temperature Range

Symbol

CBO

CEO

EBO

STG

Value

100

200

150

-55~150

Unit

℃

1. Base

2. Emitter

3. Collector

DIMENSIONS

Electrical Characteristics

Sym

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

Parameter

Collector-Base Breakdown Voltage

=50uA, I

=0)

Collector-Emitter Breakdown Voltage

=1mA, I

=0)

Emitter-Base Breakdown Voltage

=50uA, I

=0)

Collector Cut-off Current

=50V, I

=0)

Emitter Cut-off Current

=4V, I

=0)

DC Current Gain

=5V, I

=1mA)

Collector-Emitter Saturation Voltage

=10mA, I

=1mA)

Input Resistor

Transition Frequency

=10V, I

=-5mA, f=100MHz)

Min

---

100

---

Typ

---

300

---

250

Max

---

0.5

600

0.3

---

Unit

---

KΩ

MHz

DIM

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

Revision: 1

2005/06/29

DTC114TCA

MCC

Micro Commercial Components

www.mccsemi.com

Revision: 1

2005/06/29

参数对比

与DTC114TCA相近的元器件有：DTC114TCAP。描述及对比如下：

型号	DTC114TCA	DTC114TCAP
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
是否Rohs认证	不符合	符合
厂商名称	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)
零件包装代码	SOT-23	SOT-23
包装说明	SMALL OUTLINE, R-PDSO-G3	SOT-23, 3 PIN
针数	3	3
Reach Compliance Code	compliant	unknown
ECCN代码	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	100	100
JESD-30 代码	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	e3
元件数量	1	1
端子数量	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	240	260
极性/信道类型	NPN	NPN
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子面层	TIN LEAD	Matte Tin (Sn)
端子形式	GULL WING	GULL WING
端子位置	DUAL	DUAL
处于峰值回流温度下的最长时间	30	10
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz