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EL2075CS

OP-AMP, 1000uV OFFSET-MAX, 2000MHz BAND WIDTH, PDSO8, SO-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Renesas(瑞萨电子)
零件包装代码
SOIC
包装说明
SOP, SOP8,.25
针数
8
Reach Compliance Code
not_compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
6 µA
25C 时的最大偏置电流 (IIB)
6 µA
标称共模抑制比
90 dB
频率补偿
YES (AVCL>=10)
最大输入失调电压
1000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.9 mm
低-失调
NO
负供电电压上限
-7 V
标称负供电电压 (Vsup)
-5 V
功能数量
1
端子数量
8
最高工作温度
75 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
电源
+-5 V
认证状态
Not Qualified
座面最大高度
1.75 mm
最小摆率
500 V/us
标称压摆率
800 V/us
最大压摆率
25 mA
供电电压上限
7 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
BIPOLAR
温度等级
COMMERCIAL EXTENDED
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
2000000 kHz
最小电压增益
600
宽带
YES
宽度
3.9 mm
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1- 888
EL2075
September 26, 2001
FN7151
2GHz GBWP Gain-of-10 Stable
Operational Amplifier
The EL2075 is a precision voltage-
feedback amplifier featuring a 2GHz
gain-bandwidth product, fast settling
time, excellent differential gain and differential phase
performance, and a minimum of 50mA output current drive
over temperature.
The EL2075 is gain-of-10 stable with a -3dB bandwidth of
400MHz at A
V
= +10. It has a very low 200µV of input offset
voltage, only 2µA of input bias current, and a fully
symmetrical differential input. Like all voltage-feedback
operational amplifiers, the EL2075 allows the use of reactive
or non-linear components in the feedback loop. This
combination of speed and versatility makes the EL2075 the
ideal choice for all op-amp applications at a gain of 10 or
greater requiring high speed and precision, including active
filters, integrators, sample-and-holds, and log amps. The low
distortion, high output current, and fast settling makes the
EL2075 an ideal amplifier for signal-processing and
digitizing systems.
Features
• 2GHz gain-bandwidth product
• Gain-of-10 stable
• Conventional voltage-feedback topology
• Low offset voltage = 200µV
• Low bias current = 2µA
• Low offset current = 0.1µA
• Output current = 50mA over temperature
• Fast settling = 13ns to 0.1%
Applications
• Active filters/integrators
• High-speed signal processing
• ADC/DAC buffers
• Pulse/RF amplifiers
• Pin diode receivers
• Log amplifiers
EL2075
(8-PIN SO, PDIP)
TOP VIEW
• Photo multiplier amplifiers
• High speed sample-and-holds
Ordering Information
PART
NUMBER
EL2075CN
EL2075CS
TEMP. RANGE
0°C to +75°C
0°C to +75°C
PACKAGE
8-Pin PDIP
8-Pin SO
PKG. NO.
MDP0031
MDP0027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL2075
Absolute Maximum Ratings
(T
A
= 25°C)
Supply Voltage (V
S
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±7V
Common-Mode Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V
Note: See EL2071/EL2171 for Thermal Impedance curves.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Output Current Output is short-circuit protected to ground, however,
maximum reliability is obtained if I
OUT
does not exceed 70mA.
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . .θ
JA
= 95°C/W PDIP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θ
JA
= 175°C/W SO-8
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +75°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . -60°C to +150°C
Open-Loop DC Electrical Specifications
PARAMETER
V
OS
DESCRIPTION
Input Offset Voltage
V
S
= ±5V, R
L
= 100Ω, unless otherwise specified.
TEST CONDITIONS
V
CM
= 0V
TEMP
25°C
T
MIN
, T
MAX
MIN
TYP
0.2
MAX
1
2.5
8
2
0.1
6
1
2
70
70
90
90
21
25
25
15
1
1
1
50
±3
±2.5
50
±3.5
±3
±2.5
1000
800
800
600
2.3
3.2
2300
70
±4
±3.6
±3.4
2800
±3.5
UNIT
mV
mV
µV/°C
µA
µA
µA
dB
dB
mA
mA
kΩ
pF
MΩ
pF
mΩ
V
V
mA
V
V
V
V/V
V/V
V/V
V/V
nV/√Hz
pA/√Hz
TCV
OS
I
B
I
OS
Average Offset Voltage Drift
Input Bias Current
Input Offset Current
(Note 1)
V
CM
= 0V
V
CM
= 0V
All
All
25°C
T
MIN
, T
MAX
PSRR
CMRR
I
S
Power Supply Rejection Ratio
Common Mode Rejection Ratio
Supply Current—Quiescent
(Note 2)
(Note 3)
No Load
All
All
25°C
T
MIN
, T
MAX
R
IN
(diff)
C
IN
(diff)
R
IN
(cm)
C
IN
(cm)
R
OUT
CMIR
R
IN
(Differential)
C
IN
(Differential)
R
IN
(Common-Mode)
C
IN
(Common-Mode)
Output Resistance
Common-Mode Input
Range
Output Current
Output Voltage Swing
Output Voltage Swing
Output Voltage Swing
Open-Loop Gain
Open-Loop
Open-Loop
25°C
25°C
25°C
25°C
25°C
25°C
T
MIN
, T
MAX
All
I
OUT
V
OUT
V
OUT
100
V
OUT
50
A
VOL
100
No Load
100Ω
50Ω
100Ω
All
All
All
25°C
T
MIN
, T
MAX
A
VOL
50
Open-Loop Gain
50Ω
25°C
T
MIN
, T
MAX
e
N
@ > 1MHz
i
N
@ > 100kHz
NOTES:
Noise Voltage 1–100MHz
Noise Current 100k–100MHz
25°C
25°C
1. Measured from T
MIN
, T
MAX.
2. ±V
CC
= ±4.5V to 5.5V.
3. ±V
IN
= ±2.5V, V
OUT
= 0V.
2
EL2075
Closed-Loop AC Electrical Specifications
PARAMETER
SSBW
DESCRIPTION
-3dB Bandwidth
(V
OUT
= 0.4V
PP
)
V
S
= ±5V, A
V
= +20, R
F
= 1500Ω, R
L
= 100Ω unless otherwise specified.
TEST CONDITIONS
A
V
= +10
A
V
= +20
TEMP
25°C
25°C
T
MIN
, T
MAX
A
V
= +50
GBWP
LSBWa
LSBWb
GFPL
Gain-Bandwidth Product
-3dB Bandwidth
-3dB Bandwidth
Peaking (< 50MHz)
A
V
= +100
V
OUT
= 2V
PP
(Note 1)
V
OUT
= 5V
PP
(Note 1)
V
OUT
= 0.4V
PP
25°C
25°C
All
All
25°C
T
MIN
, T
MAX
GFPH
Peaking (> 50MHz)
V
OUT
= 0.4V
PP
25°C
T
MIN
, T
MAX
GFR
Rolloff (< 100MHz)
V
OUT
= 0.4V
PP
25°C
T
MIN
, T
MAX
LPD
PM
t
R
1, t
F
1
t
R
2, t
F
2
t
S
1
t
S
2
OS
SR
Linear Phase Deviation (< 100MHz)
Phase Margin
Rise Time, Fall Time
Rise Time, Fall Time
Settling to 0.1% (A
V
= -20)
Settling to 0.01% (A
V
= -20)
Overshoot
Slew Rate
V
OUT
= 0.4V
PP
A
V
= +10
0.4V Step, A
V
= +10
5V Step, A
V
= +10
2V Step
2V Step
2V Step, A
V
= +10
2V Step, A
V
= +10
All
25°C
25°C
25°C
25°C
25°C
25°C
All
500
1
60
1.2
6
13
25
10
800
0.1
0
80
32
150
125
40
2.0
128
50
0
0.5
0.5
1
1
0.5
0.5
1.8
MIN
TYP
400
200
MAX
UNIT
MHz
MHz
MHz
MHz
GHz
MHz
MHz
dB
dB
dB
dB
dB
dB
°
°
ns
ns
ns
ns
%
V/µs
DISTORTION
(Note 2)
HD2
2nd Harmonic Distortion
@ 20MHz, A
V
= +20
25°C
T
MIN
, T
MAX
HD3
3rd Harmonic Distortion
@ 20MHz, A
V
= +20
25°C
T
MIN
, T
MAX
NOTES:
1. Large-signal bandwidth calculated using LSBW = Slew Rate (2π
* V
PEAK
)
.
2. All distortion measurements are made with V
OUT
= 2V
PP
, R
L
= 100Ω.
-65
-40
-30
-30
-50
-50
dBc
dBc
dBc
dBc
3
EL2075
Typical Performance Curves
Non-Inverting
Frequency Response
Inverting Frequency Response
Frequency Response
for Various R
L
s
Open Loop Gain
and Phase
Output Voltage Swing
vs Frequency
Equivalent Input Noise
PSRR, CMRR, and Closed-Loop
R
O
Frequency
2nd and 3rd Harmonic
Distortion vs Frequency
2-Tone, 3rd Order
Intermodulation Intercept
4
EL2075
Typical Performance Curves
(Continued)
Settling Time vs
Output Voltage Change
Settling Time vs
Closed-Loop Gain
Series Resistor and Resulting
Bandwidth vs Capacitive Load
Common-Mode Rejection
Ratio vs Input Common-Mode
Voltage
Bias and Offset Current vs
Input Common-Mode Voltage
Supply Current
vs Temperature
Bias and Offset Current
vs Temperature
Offset Voltage
vs Temperature
A
VOL
, PSRR, and CMRR
vs Temperature
Small Signal Transient Response
Large Signal Transient Response
5
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参数对比
与EL2075CS相近的元器件有:EL2075CN。描述及对比如下:
型号 EL2075CS EL2075CN
描述 OP-AMP, 1000uV OFFSET-MAX, 2000MHz BAND WIDTH, PDSO8, SO-8 OP-AMP, 1000uV OFFSET-MAX, 2000MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8
是否Rohs认证 不符合 不符合
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 SOIC DIP
包装说明 SOP, SOP8,.25 DIP, DIP8,.3
针数 8 8
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 6 µA 6 µA
25C 时的最大偏置电流 (IIB) 6 µA 6 µA
标称共模抑制比 90 dB 90 dB
频率补偿 YES (AVCL>=10) YES (AVCL>=10)
最大输入失调电压 1000 µV 1000 µV
JESD-30 代码 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e0 e0
长度 4.9 mm 9.525 mm
低-失调 NO NO
负供电电压上限 -7 V -7 V
标称负供电电压 (Vsup) -5 V -5 V
功能数量 1 1
端子数量 8 8
最高工作温度 75 °C 75 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP
封装等效代码 SOP8,.25 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) 240 NOT SPECIFIED
电源 +-5 V +-5 V
认证状态 Not Qualified Not Qualified
座面最大高度 1.75 mm 5.334 mm
最小摆率 500 V/us 500 V/us
标称压摆率 800 V/us 800 V/us
最大压摆率 25 mA 25 mA
供电电压上限 7 V 7 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES NO
技术 BIPOLAR BIPOLAR
温度等级 COMMERCIAL EXTENDED COMMERCIAL EXTENDED
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING THROUGH-HOLE
端子节距 1.27 mm 2.54 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
标称均一增益带宽 2000000 kHz 2000000 kHz
最小电压增益 600 600
宽带 YES YES
宽度 3.9 mm 7.62 mm
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