Product Summary:
BV
DSS
R
DSON (MAX.)
I
D
‐30V
50mΩ
‐4.5A
EMB50P03J
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
D
G
S
Pb‐Free Lead Plating & Halogen Free
PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
Continuous Drain Current
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction & Storage Temperature Range
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
SYMBOL
V
GS
I
D
LIMITS
±20
‐4.5
‐3.5
I
DM
P
D
‐18
1.25
0.83
T
j
, T
stg
‐55 to 150
°C
W
A
UNIT
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction‐to‐Ambient
1
2
SYMBOL
R
JA
TYPICAL
MAXIMUM
100
UNIT
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle 1％
2012/11/26
p.1
PARAMETER
SYMBOL
EMB50P03J
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, Unless Otherwise Noted)
TEST CONDITIONS
LIMITS
MIN TYP
MAX
UNIT
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= ‐250A
V
DS
= V
GS
, I
D
= ‐250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= ‐24V, V
GS
= 0V
V
DS
= ‐20V, V
GS
= 0V, T
J
= 125 °C
On‐State Drain Current
1
Drain‐Source On‐State Resistance
1
I
D(ON)
R
DS(ON)
V
DS
= ‐5V, V
GS
= ‐10V
V
GS
= ‐10V, I
D
= ‐4.5A
V
GS
= ‐4.5V, I
D
= ‐3.5A
Forward Transconductance
1
g
fs
V
DS
= ‐5V, I
D
= ‐4.5A
‐30
‐1
‐4.5
‐1.5
42
66
16
‐3
±100
‐1
‐10
50
85
S
A
mΩ
nA
A
V
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1,2
Gate‐Source Charge
1,2
Gate‐Drain Charge
Turn‐On Delay Time
1,2
Rise Time
1,2
Turn‐Off Delay Time
1,2
Fall Time
1,2
1,2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0V, V
DS
= ‐15V, f = 1MHz
820
122
97
9
2.2
2.5
12
16
34
20
nS
nC
pF
V
DS
= ‐15V, V
GS
= ‐10V,
I
D
= ‐4.5A
V
DS
= ‐15V,
I
D
= ‐1A, V
GS
= ‐10V, R
GS
= 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
Forward Voltage
1
1
2
3
3
I
S
I
SM
V
SD
I
F
= I
S
, V
GS
= 0V
‐3
‐12
‐1.2
A
V
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
2012/11/26
p.2
TYPICAL CHARACTERISTICS
EMB50P03J
15
V = ‐10V
GS
12
On‐Region Characteristics
‐8.0V
‐7.0V
2.4
2.2
R ‐ Normalized
DS(ON)
Drain‐Source on‐Resistance
2.0
1.8
V = ‐4.5V
GS
1.6
1.4
1.2
1.0
0.8
0
3
On‐Resistance Variation with
Drain Current and Gate Voltage
‐I Drain Current( A )
‐6.0V
9
‐4.5V
‐6.0V
‐7.0V
‐8.0V
‐10V
6
D
3
0
0
1
DS
2
3
4
‐V Drain‐Source Voltage( V )
9
6
‐I ‐ Drain Current( A )
D
12
15
1.6
I = ‐4A
D
V = ‐10V
GS
On‐Resistance Variation w
ith Tem
perature
0.16
On‐Resistance Variation
with Gate‐Source Voltage
I = ‐3A
D
R Normalized
Drain‐Source on‐Resistance
1.4
0.12
R ‐ on‐Resistance( Ω )
DS(on)
1.2
0.08
°
T = 125 C
A
0.04
°
T = 25 C
A
DS(ON)
1.0
0.8
0.6
‐50
‐25
0
25
50
75
°
100
125
150
0
T ‐Junction Tem
perature( C )
2
4
6
‐V ‐ Gate‐Source Voltage( V )
GS
8
10
15
V = ‐10V
DS
12
Transfer Characteristics
100
°
T = ‐55 C
A
°
25 C
Body Diode Forward Voltage Variation
with Source Current and Temperature
V =0V
SD
10
‐I ‐Reverse Drain Current( A )
S
°
125 C
‐I ‐Drain Current( A )
1
0.1
0.01
°
A
T = 125 C
°
25 C
°
‐55 C
9
6
3
D
0.001
0
1
2
3
4
5
0.0001
‐V ,Gate‐Source Voltage( V )
GS
0
0.2
0.8
1.0
0.4
0.6
‐V ‐ Body Diode Forward Voltage( V )
SD
1.2
1.4
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p.3
EMB50P03J
Gate Charge Characteristics
10
I = ‐4A
D
8
‐V ,Gate‐Source Voltage( V )
GS
V = ‐5V
DS
6
‐15V
Capacitance( pF )
1200
1050
Capacitance Characteristics
f = 1MHZ
V = 0V
GS
‐10V
900
750
600
450
300
150
Coss
Crss
Ciss
4
2
0
0
2
4
6
Q ,Gate Charge( nC )
g
8
10
12
0
0
5
15
10
20
‐V Drain‐Source Voltage( V )
DS
25
30
Maximum Safe Operation Area
100
μ
100 s
1ms
Single Pulse Maximum Power Dissipation
30
25
20
Power( W )
15
10
5
0
0.01
SINGLE PULSE
°
R = 100 C/W
°
T = 25 C
A
θ
JA
10
‐I ,Drain Current( A )
D
R LIMIT
DS(ON)
10ms
1
10s
100m
s
1s
V = ‐10V
GS
SINGLE PULSE
°
R = 100 C/W
θ
JA
°
A
T = 25 C
0.01
0.1
0.1
DC
1
DS
10
50
‐V ,Drain‐Source Voltage( V )
0.1
Single Pulse Time( SEC )
1
10
100
300
Transient Thermal Response Curve
1
D=0.5
r ,Normalized Effectivce
( t )
Transient Thermal Resistance
0.2
0.1
0.1
0.05
R (t)= r(t) R
θ
JA
θ
JA
*
0.02
0.01
R = 100 C/W
θ
JA
°
0.01
P(pk)
t1
SINGLE PULSE
t2
T ‐ T = P R (t)
θ
JA
j
A
Duty Cycle,D= t1 / t2
*
0.001
0.0001
0.001
0.01
0.1
t1 , Time( ms )
1
10
100
1000
2012/11/26
p.4
Ordering & Marking Information:
Device Name: EMB50P03J for SOT‐23
EMB50P03J
23: Device Code, 23 for EMB50P03J
ABC: Date Code
Outline Drawing
Dimension in mm
Dimension
Min.
Typ.
Max.
A
0.85
1.25
A1
0
0.13
A2
0.80
b
0.30
0.50
C
0.08
0.20
D
2.75
3.10
E
2.6
3.0
E1
1.35
1.80
e
0.95
e1
1.90
L1
0.35
0.75
Footprint
2012/11/26
p.5
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