OPTICAL COmmunICATIOns
C-Band, L-Band, Pass-Band Low-Leakage PIn Photodiodes
EPM 6xx Series
Key Features
• Electro-optical
− Low back reflection
− High responsivity in L-band at 1625 nm (EPM 606)
• Packaging
− Single-mode 900 µm fiber with or without a connector
− Single-mode 250 µm fiber without a connector
− SFF package also available
Applications
•
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C- and L-Band monitoring
High-sensitivity monitoring
EDFA and DWDM
40 and 10 G line monitoring
980 forward pump
1310 and 1550 nm PONs
JDSU EPM 6xx-Series PIN photodiodes are designed for optical network
monitoring applications. The photodiode die is fabricated with a proprietary
InGaAs process in our wafer fab and assembled into a hermetically-sealed
package with antireflective-coated lens. A stainless steel bushing actively couples
the fiber to the package.
The fiber is reinforced with a rubber boot to relieve fiber-bending stresses. EPM
6xx-Series photodiodes can be produced with a variety of industry-standard
connectors or no connector at all. They are also available with mounting brackets
for both vertical panel and horizontal flush-to-board mounting.
Low-leakage versions (EPM 605LL and EPM 606LL) of the EPM 605 and EPM
606 are available with the same features, connectors, and brackets.
Small form-factor (SFF) packages EPM635 and EPM635-75 are designed for SFF
applications.
north america
:
800 498-JDSU (5378)
worlDwiDe
:
+800 5378-JDSU
webSite
:
www.jdsu.com
C-BAnd, L-BAnd, PAss-BAnd
LOw-LeAKAge PIn PhOTOdIOdes
2
Application Preference
Application/Product
C-band
C-band, high sensitivity
L-band
L-band, low sensitivity
1310 nm band
EDFA
DWDM
40 G and 10 G line monitors
980 forward pump
1310/1550 nm PON networks
1480 nm pump monitors
ePm 605
ePm 605LL
ePm 606
ePm 606LL
ePm 613
ePm 650
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Preference
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Strong Preference
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Typical spectral Response (23°C)
Typical Spectral Response
23°C
1.0
dark Current vs. Reverse Bias
Dark Current vs. Reverse Bias
1E-07
0.8
1E-08
Responsivity (A/W)
0.6
Dark Current (A)
1E-09
0.4
0.2
1E-10
85°C
65°C
45°C
25°C
0.0
800
1000
1200
1400
1600
1800
1E-11
0
5
10
15
20
25
Wavelength (nm)
Reverse Voltage (V)
C-BAnd, L-BAnd, PAss-BAnd
LOw-LeAKAge PIn PhOTOdIOdes
3
Capacitance vs. Reverse Bias (23°C) (ePm 605/606)
Capacitance vs. Reverse Bias
23°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
Optical Response nonlinearity (typical, –5 V bias)
Optical Response Nonlinearity
Typical, –5V bias
6%
4%
Capacitance (pF)
Nonlinearity (%)
2%
0%
–2%
–4%
–6%
–8%
–10%
0.01
0.1
1
10
100
Reverse Voltage (V)
Input Optical Power (mW)
PdL vs. Temperature (ePm 613)
PDL vs. Temperature
0.12
Responsivity vs. Temperature (ePm 613)
Responsivity vs. Temperature
0.7
0.1
0.66
Responsivity (A/W)
PDL (dB)
0.08
0.62
0.06
EPM 613
0.58
Power = 1 mW
EPM 613 Device 1
EPM 613 Device 2
EPM 613 Device 3
0.04
λ = 980 nm
EPM 613
0.54
Bias = –5V
λ = 980 nm
0.02
20
25
30
35
40
45
50
55
60
65
0.5
0
10
20
30
40
50
60
70
80
90
Temperature (°C)
Temperature (°C)
PdL vs. Temperature (ePm 606)
PDL vs. Temperature
0.1
Responsivity vs. Temperature (ePm 606)
Responsivity vs. Temperature
1.2
0.08
1
PDL (mdB)
0.06
Responsivity (A/W)
0.8
Sample 1
Sample 2
0.04
Sample 1
0.6
0.02
λ
= 1620 nm
Sample 2
0.4
λ = 1620 nm, V
b
= –5V, P
in
= 0.5 mW
Sample 3
Sample 4
0
0
10
20
30
40
50
60
70
0.2
–40
–20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
C-BAnd, L-BAnd, PAss-BAnd
LOw-LeAKAge PIn PhOTOdIOdes
4
Responsivity vs. wavelength, Temperature (ePm 605)
Responsivity vs. (Wavelength, Temperature)
1
0.99
0.1
0.095
0.09
PdL vs. wavelength, Temperature (ePm 605)
PDL vs. (Wavelength, Temperature)
Responsivity (A/W)
0.98
0.97
0.96
0.95
0.94
0.93
0.92
1525
1530
1535
1540
1545
1550
1555
1560
1565
PDL (dB)
15°C
23°C
65°C
0.085
0.08
0.075
0.07
0.065
0.06
1535
1540
1545
1550
1555
1560
1565
15°C
23°C
65°C
Wavelength (nm)
Wavelength (nm)
PdL vs. Temperature (ePm 605)
0.08
PDL vs. Temperature
Responsivity vs. Temperature (ePm 605)
Responsivity vs. Temperature
1
0.07
0.06
0.96
PDL (dB)
0.05
0.04
0.03
0.02
0.01
0
20
25
30
35
40
45
50
55
60
65
70
λ = 1550 nm
λ = 1310 nm
Responsivity (A/W)
0.92
EPM 605 (1310 nm)
EPM 605 (1310 nm)
EPM 605 (1550 nm)
EPM 605 (1550 nm)
0.88
Sample 5
Sample 6
0.84
λ = 1550 nm, V
b
= –5V, P
in
= 0.5 mW
Sample 7
0.8
–40
–20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
equivalent Circuit for ePm 6xx-series
model
EPM 605
EPM 606
EPM 613
EPM 650
Rs
5Ω
5Ω
5 Ω
6 Ω
Cp
0.55 pF
0.55 pF
0.75 pF
1.00 pF
R
s
1.5 nH
0.50 pF
5 nH
C
p
0.13 pF
1 nH
0.50 pF
CASE
5 nH
C-BAnd, L-BAnd, PAss-BAnd
LOw-LeAKAge PIn PhOTOdIOdes
5
dimensions diagram
Specifications in mm unless otherwise noted.
EPM 6xx with Dual-Mount Bracket
EPM 6xx without Dual-Mount Bracket
EPM 635/EPM 635LL
EPM 635-75
嵌入式系统
