Surface Mount Rectifiers
ES1AJ-ES1JJ
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 ---
600
V
CURRENT: 1.0 A
SMAJ
4.3± 0.1
1.95± 0.25
Marking Information
Dimensions in millimeters
XXXX
LGE：Lu Guang Electronic
XXXX：marking code (ES1A-ES1J)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
0.203MAX
Case:JEDEC SMAJ,molded plastic
Terminals:
Solderable
per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.084 grams
Mounting position: Any
5.6± 0.2
2.35± 0.1
1.3± 0.2
2.6± 0.15
0.2± 0.05
Mechanical Data
ES1A
J
ES1BJ
ES1CJ ES1DJ ES1G
J
ES1HJ ES1JJ
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
A
=75
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
1.0
400
280
400
500
350
500
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
30
1.25
5.0
200
35
19
50
- 55 ---- + 150
- 55 ---- + 150
1.70
A
V
A
ns
pF
/W
Maximum instantaneous forward voltage at1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=125
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied reverse voltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
Surface Mount Rectifiers
ES1AJ-ES1JJ
Ratings And Characteristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
0
PULSE
GENERATOR
(NOTE2)
D.U.T.
(+)
25VDC
(approx)
(-)
-0.25A
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR
10/15
ns/cm
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
AVERAGE FORWARD CURRENT
AMPERES
FIG.3 -- FORWARD DERATING CURVE
z
100
E
S1FJ-E
S1G
J
T
J
=25
Pulse W idth=300
µ
S
1
AMPERES
1.0
ES1A
J
-ES1D
J
0.1
ES1H
J
-ES1J
J
0.5
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
0
25
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
6
4
T
J
=25
30
8.3ms Single Half
Sine-Wave
AMPERES
15
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
0
1
5
10
50
100
REVERSE VOLTAGE,VOLTS
PACKAGE
SMA
SPQ/PCS
5000/REEL
CARTON
SPQ/PCS
80000
NUMBER OF CYCLES AT 60Hz
CARTON
GW/KG
12.00
CARTON
NW/KG
11.00
CARTON
SIZE/CM
36X30.6X31
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
DSP 与 ARM 处理器
