ES1C,ES1C pdf中文资料,ES1C引脚图,ES1C电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

端子数量

元件数量

加工封装描述

SMA, 2 PIN

无铅

Yes

欧盟RoHS规范

Yes

状态

ACTIVE

包装形状

RECTANGULAR

包装尺寸

SMALL OUTLINE

表面贴装

Yes

端子形式

C BEND

端子涂层

MATTE TIN

端子位置

DUAL

包装材料

PLASTIC/EPOXY

结构

SINGLE

二极管元件材料

SILICON

最大功耗极限

1.47 W

二极管类型

SIGNAL DIODE

反向恢复时间最大

0.0150 us

最大重复峰值反向电压

150 V

最大平均正向电流

1 A

文档预览

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

ES1A THRU ES1J

SUPER FAST RECOVERY RECTIFIER

VOLTAGE：50-400V

CURRENT：1.0A

FEATURES

·High

reliability

·Low

leakage

·Low

forward voltage

·High

current capability

·Super

fast switching speed

·High

surge capability

·Good

for switching mode circuit

SMA(DO-214AC)

.062(1.60)

.055(1.40)

.181(4.60)

.157(4.00)

.012(0.305)

.006(0.152)

.114(2.90)

.098(2.50)

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

0.064 grams

.096(2.44)

.078(2.00)

.060((1.52)

.030(0.76)

.008(0.203)

.002(0.051)

.208(5.28)

.188(4.80)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

ES1A

ES1B

100

ES1C

150

105

150

1.0

0.95

5.0

ES1D

200

140

200

ES1E

300

210

300

ES1J

400

280

400

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

at T

=55°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous forward Voltage at 1.0A

Maximum DC Reverse Current at Rated DC

Blocking Voltage T

=25°C

RRM

RMS

FSM

1.25

Maximum Full Load Reverse Current Full Cycle

Average,.375”(9.5mm) lead length at T

=75°C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Notes: 1.Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0 volts

µA

100

１

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参数对比

与ES1C相近的元器件有：ES1A、ES1B、ES1D、ES1E、ES1J。描述及对比如下：

型号	ES1C	ES1A	ES1B	ES1D	ES1E	ES1J
描述	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
端子数量	2	2	2	2	-	2
元件数量	1	1	1	1	-	1
加工封装描述	SMA, 2 PIN	塑料, SMA, 2 PIN	绿色, 塑料, SMA, 2 PIN	塑料, SMA, 2 PIN	-	SMA, 2 PIN
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-	TRANSFERRED
包装形状	RECTANGULAR	矩形的	矩形的	矩形的	-	矩形的
包装尺寸	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
表面贴装	Yes	Yes	Yes	Yes	-	Yes
端子形式	C BEND	C BEND	C BEND	C BEND	-	C BEND
端子涂层	MATTE TIN	-	PURE 锡	PURE 锡	-	NOT SPECIFIED
端子位置	DUAL	双	双	双	-	双
包装材料	PLASTIC/EPOXY	塑料/环氧树脂	塑料/环氧树脂	塑料/环氧树脂	-	塑料/环氧树脂
结构	SINGLE	单一的	单一的	单一的	-	单一的
二极管元件材料	SILICON	硅	硅	硅	-	硅
二极管类型	SIGNAL DIODE	信号二极管	信号二极管	信号二极管	-	信号二极管
反向恢复时间最大	0.0150 us	0.0200 us	0.0350 us	0.0200 us	-	0.0600 us
最大重复峰值反向电压	150 V	50 V	100 V	200 V	-	600 V
最大平均正向电流	1 A	1 A	1 A	1 A	-	1 A