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ES1HHF4G

Rectifier Diode, 1 Element, 1A, 500V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
SMA, 2 PIN
Reach Compliance Code
compli
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
参考标准
AEC-Q101
最大重复峰值反向电压
500 V
最大反向恢复时间
0.035 µs
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
30
文档预览
ES1A - ES1J
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Built-in strain relief
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied V
R
=4.0 Volts
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
16
35
85
- 55 to +150
- 55 to +150
0.95
5
100
35
18
ES
1A
50
35
50
ES
1B
100
70
100
ES
1C
150
105
150
ES
1D
200
140
200
1
30
1.3
1.7
ES
1F
300
210
300
ES
1G
400
280
400
ES
1H
500
350
500
ES
1J
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1411076
Version: M15
ES1A - ES1J
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R3
R2
ES1x
(Note 1)
H
M2
F3
F2
F4
N/A
E3
E2
G
PACKING CODE
SUFFIX
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
Clip SMA
Clip SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (ES1A) to 600V (ES1J)
EXAMPLE
PREFERRED
PART NO.
ES1JHR3G
PART NO.
ES1J
PART NO.
SUFFIX
H
PACKING CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
INSTANTANEOUS FORWARD CURRENT (A)
1.2
AVERAGE FORWARD CURRENT (A)
1
0.8
0.6
0.4
0.2
0
80
90
100
110
120
130
140
150
LEAD TEMPERATURE (
°
C)
RESISTER OR
INDUCTIVE LOAD
FIG. 2 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
Pulse Width=300μs
1% Duty Cycle
ES1F-1G
10
ES1A-D
1
ES1H-1J
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
PEAK FORWARD SURGE CURRENT
(A)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD PEAK
SURGE CURRENT
INSTANTANEOUS REVERSE CURRENT
(μA)
30
25
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
1000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
T
J
=125°C
10
T
J
=75°C
1
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1411076
Version: M15
ES1A - ES1J
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE (pF)
ES1F-J
10
ES1A-D
f=1.0MHz
Vsig=50mVp-p
1
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Specific Device Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1411076
Version: L14
ES1A - ES1J
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1411076
Version: M15
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