SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
( F3V90HVX2 )
900V 3A
FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.
APPLICATION
Switching power supply of AC 240V input
High voltage power supply
Inverter
2SK2664
OUTLINE DIMENSIONS
Case : TO-220
(Unit : mm)
RATINGS
Absolute
Maximum Ratings
iTc
= 25j
Item
Symbol
Storage Temperature
T
stg
Channel Temperature
T
ch
Drain-Source Voltage
V
DSS
V
GSS
Gate-Source Voltage
I
D
Continuous Drain CurrentiDCj
I
DP
Continuous Drain CurrentiPeak)
I
S
Continuous Source CurrentiDCj
Total Power Dissipation
P
T
Repetitive Avalanche Current
I
AR
E
AS
Single Avalanche Energy
E
AR
Repetitive Avalanche Energy
TOR
Mounting Torque
Conditions
Ratings
-55`150
150
900
}30
3
6
3
50
3
48
4.8
0.5
Units
V
A
W
A
mJ
N¥m
Pulse width
10Ês, Duty cycle
1/100
T
ch
= 150
T
ch
= 25
T
ch
= 25
i
Recommended torque
F
0.3 N¥m
j
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
Electrical
Characteristics Tc = 25
Item
Symbol
V
(BR)DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate-Source Leakage Current
g
fs
Forward Tran]conductance
Static Drain-Source On-]tate Resistance
R
DS(ON)
V
TH
Gate Threshold Voltage
V
SD
Source-Drain Diode Forward Voltage
Æjc
Thermal Resistance
Total Gate Charge
Q
g
Input Capacitance
C
iss
Reverse Transfer Capacitance
C
rss
Output Capacitance
C
oss
Turn-On Time
t
on
Turn-Off Time
t
off
Conditions
2SK2664 ( F3V90HVX2 )
Min.
900
1. 5
2. 5
Typ.
Max.
250
}0.
1
4. 7
3. 5
1. 5
2. 5
Unit
V
ÊA
S
¶
V
/L
nC
pF
70
230
ns
I
D
= 1mA, V
GS
= 0V
V
DS
= 900V, V
GS
= 0V
V
GS
=
}30V,
V
DS
= 0V
I
D
= 1. 5A, V
DS
= 10V
I
D
=1.5A, V
GS
= 10V
I
D
= 1mA, V
DS
= 10V
I
S
= 1.5A, V
GS
= 0V
junction to case
V
DD
= 400V, V
GS
= 10V, I
D
= 3A
V
DS
= 25V, V
GS
= 0V, f = 1MH
Z
I
D
= 1. 5A, R
L
= 100¶, V
GS
= 10V
2. 5
3. 5
3. 0
30
630
16
67
40
140
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2664
6
Tc =
−55°C
5
Transfer Characteristics
25°C
Drain Current I
D
[A]
4
100°C
3
150°C
2
1
V
DS
= 25V
TYP
0
0
5
10
15
20
Gate-Source Voltage V
GS
[V]
2SK2664
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance R
DS(ON)
[Ω]
10
I
D
= 1.5A
1
0.1
V
GS
= 10V
pulse test
TYP
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2664
6
Gate Threshold Voltage
5
Gate Threshold Voltage V
TH
[V]
4
3
2
1
V
DS
= 10V
I
D
= 1mA
TYP
-50
0
50
100
150
0
Case Temperature Tc [°C]
