Ordering number:EN3083
FC115
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
· On-chip bias resistors (R
1
=10kΩ, R
2
=10kΩ)
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC115 is formed with two chips, being equiva-
lent to the 2SA1344, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2066
[FC115]
Electrical Connection
C1:Collector1
C2:Collerctor2
B2:Base2
EC:Emitter Common
B1:Base1
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
I CP
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
–50
–50
–10
–100
–200
200
300
150
–55 to+150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
Symbol
ICBO
ICEO
IEBO
hFE
fT
Cob
VCB=–40V, IE=0
VCE=–40V, IB=0
VEB=–5V, IC=0
VCE=–5V, IC=–10mA
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
–50
–50
–0.8
–1.0
7.0
0.9
–1.1
–2.0
10
1.0
–1.5
–4.0
13
1.1
–170
50
200
5.1
–0.1
–0.3
MHz
pF
V
V
V
V
V
kΩ
–250
Conditions
Ratings
min
typ
max
–0.1
–0.5
–360
Unit
µA
µA
µA
VCE(sat) IC=–10mA. IB=–0.5mA
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–100µA, RBE=∞
VI(off)
VI(on)
R1
R1/R2
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–10mA
Note: The specifications shown above are for each individual transistor.
Marking:115
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4139MO, TS No.3083-1/2
FC115
Sample Application Circuit
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3083-2/2
