Ordering number:ENN4336
N-Channel Junction Silicon FET
FC13
Low-Frequency General-Purpose Amp,
Differential Amp, Analog Switch Applications
Features
· Composite type with 2 FETs contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC13 is formed with two chips, being equivalent
to the 2SK303, placed in one package.
· Excellent in thermal equilibrium and pair capability
and especially suited for differential amp.
Package Dimensions
unit:mm
2095A
[FC13]
0.6
0.4
6
4
0.16
0 to 0.1
Electrical Connection
G1
D2
S2
0.95 0.95
1.9
2.9
0.6
1
3
1.6
2.8
FET2
0.8
1.1
FET1
1:Source1
2:Drain1
3:Gate2
4:Source2
5:Drain2
6:Gate1
SANYO:CP6
S1
D1
G2
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
PT
Tj
Tstg
1unit
Conditions
Ratings
30
–30
10
10
200
300
150
–55 to +150
Unit
V
V
mA
mA
mW
mW
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72301TN(KT)/52098HA (KT)/53094TH (KOYO) X-7245 No.4336-1/4
FC13
Electrical Characteristics
at Ta = 25˚C
Parameter
G-D Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
G-S Voltage Drop
Drain Current
Drain Current Ratio
Forward Transfer Admittance
Forward Transfer Admittance Ratio
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
Ciss
Crss
RDS(on)
| Yfs |
Symbol
V(BR)DGD IG=–10µA, VDS=0
IGSS
VGS(off)
∆V
GS
IDSS
VGS=–20V, VDS=0
VDS=10V, ID=1µA
VGS(small/large), VDS=10V, ID=1mA
VDS=10V, VGS=0
VDS=10V, IDSS(small/large)
VDS=10V, VGS=0, f=1kHz
VDS=10V, | Yfs | (small/large)
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
VDS=10mV, VGS=0
1.2*
0.9
3.0
0.9
5.0
0.9
250
pF
pF
Ω
5.0
mS
–0.3
–0.9
Conditions
Ratings
min
–30
–1.0
–2.5
50
6.0*
typ
max
Unit
V
nA
V
mV
mA
The specifications shown above are for each individual transistor.
Note*:The FC13 is classified by FET1 I
DSS
as follows :
1.2
D
3.0
2.5
E
6.0
Marking:13
I
DSS
rank:D,E
5
ID -- VDS
5
ID -- VDS
4
4
Drain Current, ID -- mA
Drain Current, ID -- mA
VGS=0
3
3
VGS=0
2
--0.1V
--0.2V
--0.1V
2
--0.2V
1
1
--0.3V
--0.4V
--0.3V
--0.4V
0
0
1
2
3
4
5
0
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
ID -- VGS
Drain-to-Source Voltage, VDS -- V
10
ID -- VGS
VDS=10V
VDS=10V
5
8
4
Drain Current, ID -- mA
Ta
=
--2
5
°
C
6
3
=5
SS
ID
A
.0m
3.0
mA
4
2
2
1.2m
--1.50
--1.25
--1.00
--0.75
--0.50
--0.25
A
0
0
--1.2
--1.0
--0.8
C
75
°
25
--0.6
1
°
C
--0.2
0
0
--0.4
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
No.4336-2/4
Drain Current, ID -- mA
FC13
5
VGS(off) -- IDSS
VDS=10V
ID=1
µ
A
2
y
fs -- ID
VDS=10V
f=1kHz
Forward Transfer Admitttance,
y
fs -- mS
Cutoff Voltage, VGS(off) -- V
3
2
10
7
5
3
2
5.0m
A
3.0m
A
--1.0
7
5
=1.
SS
ID
2m
A
1.0
7
5
3
2
0.1
2
3
5
7
2
3
5
7
3
2
5
7
1.0
2
3
5
7
10
1.0
10
Saturation Drain Current, IDSS -- mA
3
y
fs -- IDSS
Drain Current, ID -- mA
7
RDS(on) -- IDSS
VDS=10mV
VGS=0
Forward Transfer Admittance,
y
fs -- mS
Static Drain-to-Source
ON-State Resistance, RDS(on) --
Ω
2
VDS=10V
VGS=0
f=1kHz
5
10
7
5
3
2
3
2
100
1.0
5
7
1.0
2
3
5
7
10
7
7
1.0
2
3
5
7
10
Saturation Drain Current, IDSS -- mA
100n
Drain Current, IDSS -- mA
5
3
IGDL -- VDS
Ciss -- VDS
Gate-to-Drain Leakage Current, IGDL -- A
3
10n
3
1n
3
100p
3
10p
3
1p
5
0
IGDL
G
D
S
ID
DC
DC
VGS=0
f=1MHz
Input Capacitance, Ciss -- pF
2
10
7
5
3
2
ID=1mA
5
10
15
20
25
1.0
7
1.0
2
3
5
7
10
2
3
5
7
drain-to-Source Voltage, VDS -- V
10
Crss -- VDS
Drain-to-Source Voltage, VDS -- V
16
NF -- f
Reverse Transfer Capacitance, Crss -- pF
7
5
3
2
VGS=0
f=1MHz
Noise Figure, NF -- dB
14
12
10
8
6
4
2
0
10
VDS=10V
Rg=1kΩ
1.0
7
5
3
2
7
1.0
2
3
5
7
10
2
3
5
7
ID=0.1mA
0.3mA
3.0mA
2
5 100 2
5
1k 2
5 10k 2
5 100k 2
5 1M
drain-to-Source Voltage, VDS -- V
Frequency, f -- Hz
No.4336-3/4
FC13
12
11
10
NF -- f
Allowable Power Dissipation, PD -- mW
VDS=10V
ID=3.0mA
240
PD -- Ta
200
Noise Figure, NF -- dB
9
8
7
6
160
120
k
Ω
=1
Rg
5
4
3
2
1
80
10
k
Ω
5 100 2
5
2
5 10k 2
5 100k 2
5 1M
40
0
10 2
100k
Ω
1k
0
0
20
40
60
80
100
120
140
160
Frequency, f -- Hz
Ambient Temperatuure, Ta --
°C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject to
change without notice.
PS No.4336-4/4
