FC5916010R
FC5916010R
Dual N-channel MOSFET
For switching
Unit: mm
Features
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: V5
Basic Part Number
Dual FK390601 (Source Common type)
4. Drain(FET2)
1. Gate(FET1)
2. Source(FET1,2) 5. Drain(FET1)
3. Gate(FET2)
Packaging
FC5916010R Embossed type (Thermo-compression sealing):
8 000 pcs / reel (standard)
Panasonic
JEITA
Code
SSMini5-F4-B
SC-107BB
SOT-665
Absolute Maximum Ratings Ta = 25
°C
Parameter
Drain-source Voltage
FET1 Gate-source Voltage
FET2 Drain Current
Drain Current (Pulsed)
Total Power Dissipation
Overall
Channel Temperature
Storage Temperature Range
Internal Connection
Symbol
VDS
VGS
ID
IDp
PD
Tch
Tstg
Rating
60
±12
100
200
125
150
-55 to +150
Unit
V
V
mA
mA
mW
°C
°C
5
FET1
FET2
4
1
2
2
3
Pin name
1. Gate(FET1)
4. Drain(FET2)
2. Source(FET1,2) 5. Drain(FET1)
3. Gate(FET2)
Publication date: October 2012
Ver. CED
1
FC5916010R
Electrical Characteristics Ta = 25
°C ±
3
°C
FET1,FET2
Parameter
Symbol
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
ID = 1 mA, VGS = 0 V
VDS = 60 V, VGS = 0 V
VGS =
±10
V, VDS = 0 V
ID = 1.0
μA,
VDS = 3.0 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VDS = 3.0 V
VDS = 3 V, VGS = 0 V, f = 1 MHz
VDD = 3 V, VGS = 0 to 3 V
ID = 10 mA
VDD = 3 V, VGS = 3 to 0 V
ID = 10 mA
Min
60
Typ
Max
1.0
±10
1.5
15
12
Unit
V
μA
μA
V
Ω
mS
pF
ns
ns
VDSS
IDSS
IGSS
Vth
RDS(on)1
RDS(on)2
|Yfs|
Ciss
Coss
Crss
ton
toff
0.9
20
1.2
8
6
60
12
7
3
100
100
Turn-on time
*1
Turn-off time
*1
*1 See Test circuit
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Ver. CED
2
FC5916010R
*1 Test circuit
VDD = 3 V
VDD=3V
Vin
3V
0V
PW = 10
μs
D.C.
≤
1 %
ID=10mA
ID = 10 mA
RL=300Ω
RL = 300
Ω
D
Vin
VGS=0½3V
Vin
Vout
Vout
G
50
Ω
50Ω
S
90 %
Vin
10 %
90 %
Vout
10 %
t
on
t
off
Ver. CED
3
FC5916010R
0.1
0.08
0.06
0.04
2.0 V
0.02
1.5 V
0
0
0.2
0.4
0.6
0.8
1
1.2
VGS = 4.0 V
1.E-01
Ta = 85
°C
Drain Current ID (A)
Drain Current ID (A)
1.E-02
2.5 V
1.E-03
25
°C
-30
°C
1.E-04
1.E-05
0
1
2
3
Drain-source Voltage VDS (V)
Gate-source Voltage VGS (V)
ID - VDS
0.4
10
ID - VGS
Drain-source On-state Resistance
RDS (on) (Ω)
VGS = 2.5 V
Drain-source Voltage VDS (V)
0.3
ID = 2.0 mA
1.0 mA
0.5 mA
4.0 V
0.2
0.1
0
2
3
4
5
6
Gate-source Voltage VGS (V)
1
0.001
0.01
0.1
Drain current ID (A)
VDS - VGS
100
3
RDS(on) - ID
Gate-source Voltage VGS (V)
Capacitance C (pF)
2
10
Ciss
VDD = 3 V
Coss
Crss
1
1
0.1
1
10
100
0
0
1
2
Drain-source Voltage VDS (V)
Total Gate Charge Qg (nC)
Capacitance - VDS
Ver. CED
Dynamic Input/Output Characteristics
4
FC5916010R
Drain-source On-state Resistance
RDS (on) (Ω)
2.5
12
10
8
6
4.0 V
4
2
0
-50
-50
0
50
100
150
0
50
100
150
VGS = 2.5 V
Gate-source Threshold Voltage Vth (V)
2
1.5
1
0.5
0
Temperature Ta (°C)
Temperature Ta (°C)
Vth - Ta
0.2
RDS(on) - Ta
Total Power Dissipation PD (W)
0.1
0
0
50
100
150
Temperature Ta (°C)
PD - Ta
1000
1
IDp =0.2 A
Thermal Resistance Rth (°C/W)
100
Drain Current ID (A)
0.1
1 ms
0.01
Operation in this area
is limited by RDS(on)
10 ms
100 ms
1s
10
0.001
Ta = 25
°C,Glass
epoxy board
(25.4
×
25.4
×
t0.8 mm) coated with copper foil,
which has more than 300 mm
2
.
DC
1
0.001
0.01
0.1
1
10
100
1000
0.0001
0.01
0.1
1
10
100
1000
Pulse Width tsw (s)
Drain-source Voltage VDS (V)
Rth - tsw
Ver. CED
Safe Operating Area
5
嵌入式系统
