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FCD620N60ZF

漏源电压(Vdss):600V 连续漏极电流(Id)(25°C 时):7.3A 栅源极阈值电压:5V @ 250uA 漏源导通电阻:620mΩ @ 3.6A,10V 最大功率耗散(Ta=25°C):89W 类型:N沟道 N沟道,600V,7.3A,620mΩ@10V

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
SMALL OUTLINE, R-PSSO-G2
制造商包装代码
369AS
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
14 weeks
雪崩能效等级(Eas)
135 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
600 V
最大漏极电流 (Abs) (ID)
7.3 A
最大漏极电流 (ID)
7.3 A
最大漏源导通电阻
0.62 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-252AA
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
89 W
最大脉冲漏极电流 (IDM)
21.9 A
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCD620N60ZF — N
沟道
SuperFET
®
II FRFET
®
MOSFET
2014
2
FCD620N60ZF
N
沟道
SuperFET
®
II FRFET
®
MOSFET
600 V、 7.3 A、 620 m
特性
• 650 V @ T
J
= 150°C
典型值
R
DS(on)
= 528 m
超½栅极电荷 (典型值
Qg = 20 nC)
½有效输出电容 (典型值
C
oss(eff.)
= 71 pF)
• 100%
经过雪崩测试
提高静电放电保护½力
符合
RoHS
标准
说明
SuperFET
®
II MOSFET
是飞兆半导½新一代利用电荷平衡技术
实现出色½导通电阻和更½栅极电荷性½的高压超级结
(SJ)
MOSFET
系列产品。
这项技术专用于最小化导通损耗并提供卓越
的开关性½、
dv/dt
额定值和更高雪崩½量。因此,
SuperFET
MOSFET
非常适合开关电源应用,如功率因数校正
(PFC)、服务
/
电信电源、平板电视电源、
ATX
电源及工业电源应用。
SuperFET II FRFET
®
MOSFET
优化½二极管的反向恢复性½可
去除额外元件并提高系统可靠性。
应用
• LCD / LED / PDP
电视和显示器照明
太阳½逆变器
/ AC-DC
电源
D
D
G
S
G
D-PAK
S
参数
FCD620N60ZF
600
±20
(f > 1 Hz)
±30
7.3
4.6
(说明
1)
(说明
2)
(说明
1)
(说明
1)
(说明
3)
(T
C
= 25°C)
-
降½至
25°C
以上
21.9
135
1.5
0.89
100
20
89
0.71
-55
+150
300
单½
V
V
A
A
mJ
A
mJ
V/ns
W
W/°C
°C
°C
绝对最大额定值
T
C
= 25°C
除非另有说明
符号
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
漏极-源极电压
栅极-源极电压
漏极电流
漏极电流
单脉冲雪崩½量
雪崩电流
重复雪崩½量
MOSFET dv/dt
二极管恢复
dv/dt
峰值
功耗
- DC
- AC
-
连续
(T
C
= 25°C)
-
连续
(T
C
= 100°C)
-
脉冲
工½和存储温度范围
用于焊接的最大引线温度,距离外壳
1/8",持续 5
热性½
符号
R
JC
R
JA
© 2013
飞兆半导½公司
FCD620N60ZF Rev. C3
参数
结至外壳热阻最大值
结至环境热阻最大值
1
FCD620N60ZF
1.4
100
单½
°C/W
www.fairchildsemi.com
FCD620N60ZF — N
沟道
SuperFET
®
II FRFET
®
MOSFET
封装标识与定购信息
器件编号
FCD620N60ZF
顶标
FCD620N60ZF
封装
DPAK
包装方法
卷带
卷尺寸
330 mm
带½
16 mm
数量
2500
电气特性
T
C
= 25°C
除非另有说明
符号
参数
测试条件
最小值
典型值
最大值
单½
关断特性
BV
DSS
BV
DSS
/
T
J
BV
DS
I
DSS
I
GSS
漏极-源极击穿电压
击穿电压温度系数
漏源极雪崩击穿电压
零栅极电压漏极电流
栅极
-
½漏电流
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
I
D
=10 mA,参考温度为 25°C
V
GS
= 0 V, I
D
= 7.3 A
V
DS
= 480 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= ±20 V, V
DS
= 0 V
600
650
-
-
-
-
-
-
-
0.6
700
-
-
-
-
-
-
-
5
20
±10
V
V/°C
V
A
A
导通特性
V
GS(th)
R
DS(on)
栅极阈值电压
漏极至源极静态导通电阻
V
GS
= V
DS
, I
D
= 250
A
V
GS
= 10 V, I
D
= 3.6 A
3
-
-
0.528
5
0.62
V
动态特性
C
iss
C
oss
C
rss
C
oss
C
oss(eff.)
Q
g(tot)
Q
gs
Q
gd
ESR
输入电容
输出电容
反向传输电容
输出电容
有效输出电容
10 V
的栅极电荷总量
栅极
-
源极栅极电荷
栅极
-
漏极
米勒
电荷
等效串联电阻
f = 1 MHz
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
V
DS
= 380 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V to 480 V, V
GS
= 0 V
V
DS
= 380 V, I
D
= 3.6 A,
V
GS
= 10 V
(说明
4)
-
-
-
-
-
-
-
-
-
855
625
30
16
71
20
4.5
7.7
2.7
1135
830
45
-
-
36
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
开关特性
t
d(on)
t
r
t
d(off)
t
f
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
V
DD
= 380 V, I
D
= 3.6 A,
V
GS
= 10 V, R
g
= 4.7
(说明
4)
-
-
-
-
15
7
35
10
40
24
80
30
ns
ns
ns
ns
漏极
-
源极二极管特性
I
S
I
SM
V
SD
t
rr
Q
rr
漏极
-
源极二极管最大正向连续电流
漏极
-
源极二极管最大正向脉冲电流
漏极
-
源极二极管正向电压
反向恢复时间
反向恢复电荷
V
GS
= 0 V, I
SD
= 3.6 A
V
GS
= 0 V, I
SD
= 3.6 A,
dI
F
/dt = 100 A/s
-
-
-
-
-
-
-
-
84
0.325
7.3
21.9
1.2
-
-
A
A
V
ns
C
注意:
1.
重复额定值:脉冲½度受限于最大结温。
2. I
AS
= 1.5 A, V
DD
= 50 V, R
G
= 25
,启动
T
J
= 25°C。
3. I
SD
3.6
A, di/dt
200 A/s, V
DD
BV
DSS
,启动
T
J
= 25°C。
4.
本质上独立于工½温度的典型特性。
© 2013
飞兆半导½公司
FCD620N60ZF Rev. C3
2
www.fairchildsemi.com
FCD620N60ZF — N
沟道
SuperFET
®
II FRFET
®
MOSFET
典型性½特征
1.
通态区域特性
20
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
2.
传输特性
25
*Notes:
1. V
DS
= 20V
2. 250
s Pulse Test
10
I
D
, Drain Current[A]
I
D
, Drain Current[A]
10
150 C
25 C
-55 C
o
o
o
*Notes:
1. 250
s Pulse Test
2. T
C
= 25 C
o
1
0.4
1
1
10
V
DS
, Drain to Source Voltage[V]
20
4
5
6
7
V
GS
, Gate to Source Voltage[V]
8
3.
导通电阻变化与漏极电流和栅极电压
1.2
*Note: T
C
= 25 C
R
DS(ON)
[
],
Drain to Source On-Resistance
o
4.
½二极管正向电压变化与源极电流和温度
40
*Notes:
1. V
GS
= 0V
I
S
, Reverse Drain Current [A]
1.0
10
2. 250
s Pulse Test
0.8
V
GS
= 10V
150 C
25 C
o
o
1
0.6
V
GS
= 20V
0.4
0
4
8
12
I
D
, Drain Current [A]
16
20
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, Body Diode Forward Voltage [V]
1.6
5.
电容特性
10000
C
iss
6.
栅极电荷特性
10
*Note: I
D
= 3.6A
V
GS
, Gate to Source Voltage [V]
1000
Capacitances [pF]
8
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
100
C
oss
6
10
*Note:
1. V
GS
= 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4
C
rss
1
2
0.1
0.1
1
10
100
V
DS
, Drain to Source Voltage [V]
600
0
0
4
8
12
16
20
Q
g
, Total Gate Charge [nC]
24
© 2013
飞兆半导½公司
FCD620N60ZF Rev. C3
3
www.fairchildsemi.com
FCD620N60ZF — N
沟道
SuperFET
®
II FRFET
®
MOSFET
典型性½特征
(接上页)
7.
击穿电压变化与温度
1.15
BV
DSS
, [Normalized]
Drain to Source Breakdown Voltage
R
DS(on)
, [Normalized]
Drain to Source On-Resistance
*Notes:
1. V
GS
= 0V
2. I
D
= 10mA
8.
导通电阻变化与温度
2.5
*Notes:
1. V
GS
= 10V
2. I
D
= 3.6A
1.10
1.05
1.00
0.95
0.90
0.85
-75
2.0
1.5
1.0
0.5
-50
0
50
100
150
o
T
J
, Junction Temperature [ C]
200
0.0
-75
-50
0
50
100
150
o
T
J
, Junction Temperature [ C]
200
9.
最大安全工½区
50
10.
最大漏极电流与外壳温度
8
I
D
, Drain Current [A]
10
s
100
s
1ms
10ms
DC
I
D
, Drain Current [A]
10
6
4
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
2
0.1
0.1
10
100
V
DS
, Drain-Source Voltage [V]
1
1000
0
25
50
75
100
o
125
T
C
, Case Temperature [ C]
150
11. Eoss
与漏极
-
源极电压的关系
4.0
3.2
E
OSS
, [
J]
2.4
1.6
0.8
0
0
122
244
366
488
V
DS
, Drain to Source Voltage [V]
600
© 2013
飞兆半导½公司
FCD620N60ZF Rev. C3
4
www.fairchildsemi.com
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