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FDH44N50

MOSFET Single N-Ch 500V .12Ohm SMPS

器件类别：分立半导体    晶体管   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
包装说明
FLANGE MOUNT, R-PSFM-T3
制造商包装代码
340CK
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
12 weeks
雪崩能效等级（Eas）
1500 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
500 V
最大漏极电流 (Abs) (ID)
44 A
最大漏极电流 (ID)
44 A
最大漏源导通电阻
0.12 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-247
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
175 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
750 W
最大脉冲漏极电流 (IDM)
176 A
认证状态
Not Qualified
表面贴装
NO
端子面层
Matte Tin (Sn) - annealed
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDH44N50
—
N-Channel SMPS Power MOSFET
December
2013
FDH44N50
N-Channel
SMPS Power
MOSFET
500
V,
44
A,
120
mΩ
Features
• Low
Gate Charge Q
g
Results
in
Simple Drive Requirement
(Typ. 90 nC)
• Improved Gate,
Avalanche
and
High Reapplied dv/dt
Ruggedness
• Reduced
R
DS(on)
(110 mΩ (Typ.) @ V
GS
= 10 V,
I
D
= 22 A)
• Reduced Miller
Capacitance
and
Low
Input
Capacitance
(Typ. C
rss
= 40 pF)
• Improved
Switching Speed
with
Low
EMI
• 175
o
C
Rated Junction Temperature
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and DMOS
technology. This MOSFET is tailored to reduce on-state
resistance, and to provide better switching performance and
higher avalanche energy strength. This device family is
suitable for switching power converter applications such as
power factor correction (PFC), flat panel display (FPD) TV
power, ATX and electronic lamp ballasts.
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
Gate to Source Voltage
T
C
= 25°C unless otherwise noted.
Parameter
Drain to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10 V)
Continuous (T
C
= 100
o
C, V
GS
= 10 V)
Pulsed
1
Power
Dissipation
Derate
Above
Operating and Storage Temperature
25
o
C
Soldering Temperature for 10
Seconds
FDH44N50
500
Unit
V
±30
44
32
176
750
5
-55 to 175
V
A
A
A
W
W/
o
C
o
C
o
C
I
D
P
D
T
J
, T
STG
300 (1.6mm from case)
10ibf*in (1.1N*m)
Mounting Torque, 8-32 or M3 Screw
Thermal Characteristics

+
θ



+
θ



FDH44N50
0.2
40
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.

6?
6?
©2002 Fairchild Semiconductor Corporation
FDH44N50
Rev. C1
1
www.fairchildsemi.com
FDH44N50
—
N-Channel SMPS Power MOSFET
Package Marking and Ordering Information
Part Number
FDH44N50
Top Mark
FDH44N50
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
units
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted.
Test Conditions
Min.
Typ.
Max.
Unit
Statics
B
VDSS
∆B
VDSS
/
∆T
J
r
DS(ON)
Drain to Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain to Source On-Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
µA,
V
GS
= 0 V
Reference to 25
o
C,
I
D
= 1 mA
500
-
-
2
-
-
-
-
0.61
0.11
3.15
-
-
-
-
-
0.12
4
25
250
±100
V
V/°C
Ω
V
µA
nA
V
GS(th)
I
DSS
I
GSS
V
GS
= 10 V, I
D
= 22 A
V
DS
= 500 V
V
GS
= 0 V
V
DS
= V
GS
, I
D
= 250
µA
T
C
=
T
C
= 150
o
C
25
o
C
V
GS
= ±20 V
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50 V, I
D
= 22 A
V
GS
= 10 V,
V
DS
= 400 V,
I
D
= 44 A
V
DD
= 250 V,
I
D
= 44 A,
R
G
= 2.15
Ω,
R
D
= 5.68
Ω
V
DS
= 25V, V
GS
= 0 V,
f = 1 MHz
11
-
-
-
-
-
-
-
-
-
-
-
90
24
31
16
84
45
79
5335
645
40
-
108
29
37
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Avalanche Characteristics
E
AS
I
AR
Single Pulse Avalanche Energy
2
Avalanche Current
1500
-
-
-
-
44
mJ
A
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
Q
RR
Notes:
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
I
SD
= 44 A
D
-
-
-
-
-
-
-
0.900
920
14
44
176
1.2
1100
18
A
A
V
ns
µC
S
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
t
rr
I
SD
= 44 A, dI
SD
/dt = 100 A/µs
I
SD
= 44 A, dI
SD
/dt = 100 A/µs
1: Repetitive rating; pulse-width limited by maximum junction temperature.
2:
Starting T
J
= 25°C, L = 1.61 mH, I
AS
= 44
A
©2002 Fairchild Semiconductor Corporation
FDH44N50
Rev. C1
2
www.fairchildsemi.com
FDH44N50
—
N-Channel SMPS Power MOSFET
Typical Characteristics
500
200
I
D
, DRAIN TO SOURCE CURRENT (A)
I
D
, DRAIN TO SOURCE CURRENT (A)
T
J
= 25
o
C
V
GS
DESCENDING
10V
100
T
J
= 175
o
C
V
GS
DESCENDING
100
8V
6V
5.5V
5V
4.5V
10V
6.5V
6V
5.5V
5V
4.5V
4V
10
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
10
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
1
0
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
160
140
NORMALIZED DRAIN to SOURCE ON RESISTANCE
3
Figure 2. Output Characteristics
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
V
DD
= 80 V
I
D
, DRAIN CURRENT (A)
120
100
80
60
40
20
0
3.0
2
T
J
= 175
o
C
T
J
= 25
o
C
1
V
GS
= 10 V, I
D
= 22 A
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
-50
-25
0
25
50
75
100
125
150
175
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperatrue
16
10000
V
GS
, GATE to SOURCE VOLTAGE (V)
I
D
= 44A
100V
250V
CISS
C, CAPACITANCE (pF)
12
400V
8
1000
COSS
100
4
CRSS
V
GS
= 0V, f = 1MHz
10
1
10
100
0
0
25
50
75
100
125
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 5. Capacitance vs Drain To Source Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
©2002 Fairchild Semiconductor Corporation
FDH44N50
Rev. C1
3
www.fairchildsemi.com
FDH44N50
—
N-Channel SMPS Power MOSFET
Typical Characteristics
I
SD
, SOURCE TO DRAIN CURRENT (A)
80
70
60
50
40
30
20
10
0
0.3
T
J
= 175
o
C
(Continued)
200
100
I
D
, DRAIN CURRENT (A)
100µs
T
J
= 25
o
C
10
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
1ms
10ms
T
C
=
25
o
C
DC
10
100
1000
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
1
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
50
Figure 8. Maximum Safe Operating Area
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (°C)
Figure 9. Maximum Drain Current vs Case Temperature
Z
θJC
, NORMALIZED THERMAL RESPONSE
DUTY CYCLE DESENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1
0.1
PD
t1
t2
DUTY FACTOR, D = t1 / t2
PEAK
T
J
=
(PD X Z
θJC
X R
θJC)
+ T
C
10
-4
10
-3
10
-2
10
-1
10
0
SINGLE PULSE
0.01
10
-5
t1, RECTANGULAR PULSE DURATION (S)
Figure 10. Normalized Transient Thermal Impedance, Junction to Case
©2002 Fairchild Semiconductor Corporation
FDH44N50
Rev. C1
4
www.fairchildsemi.com
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器件捷径:
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