FDMC7692S N-Channel Power Trench
®
SyncFET
TM
December 2009
FDMC7692S
N-Channel Power Trench
®
SyncFET
TM
30 V, 12.5 A, 9.3 m:
Features
Max r
DS(on)
= 9.3 m: at V
GS
= 10 V, I
D
= 12.5 A
Max r
DS(on)
= 13.6 m: at V
GS
= 4.5 V, I
D
= 10.4 A
High performance technology for extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This FDMC7692S is produced using Fairchild Semiconductor’s
advanced Power Trench
®
process that has been especially
tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Applications
DC - DC Buck Converters
Notebook DC - DC application
Top
Pin 1
S
S
S
Bottom
D
D
D
D
D
D
D
8
1
S
5
6
7
4
3
2
G
S
S
G
D
MLP 3.3x3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
Sinlge Pulse Avalanche Energy
Power Dissipation
T
A
= 25 °C
Operating and Storage Junction Temperature Range
(Note 3)
(Note 1a)
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
Parameter
Ratings
30
±20
18
12.5
45
21
2.3
-55 to +150
mJ
W
°C
A
Units
V
V
Thermal Characteristics
R
TJA
Thermal Resistance, Junction to Ambient
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7692S
Device
FDMC7692S
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7692S Rev.C1
1
www.fairchildsemi.com
FDMC7692S N-Channel Power Trench
®
SyncFET
TM
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 1 mA, V
GS
= 0 V
I
D
= 10 mA, referenced to 25 °C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
30
16
500
100
V
mV/°C
PA
nA
On Characteristics
(Note 2)
V
GS(th)
'V
GS(th)
'T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 1 mA
I
D
= 10 mA, referenced to 25 °C
V
GS
= 10 V, I
D
= 12.5 A
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 4.5 V, I
D
= 10.4 A
V
GS
= 10 V, I
D
= 12.5 A
T
J
= 125 °C
V
DS
= 5 V, I
D
= 12.5 A
1.2
2.0
-5
7.8
10.8
9.6
62
9.3
13.6
13.0
S
m:
3.0
V
mV/°C
g
FS
Forward Transconductance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
1040
445
40
1.1
1385
590
60
2.9
pF
pF
pF
:
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 4.5 V V
DD
= 15 V
I
D
= 12.5 A
V
DD
= 15 V, I
D
= 12.5 A,
V
GS
= 10 V, R
GEN
= 6
:
9
3
19
3
16
8
4
2
17
10
34
10
23
10
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 12.5 A
V
GS
= 0 V, I
S
= 0.9 A
(Note 2)
(Note 2)
0.9
0.5
21
16
1.3
0.7
33
29
V
ns
nC
I
F
= 12.5 A, di/dt = 300 A/Ps
Notes:
1. R
TJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJC
is guaranteed by design while R
TCA
is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in
2
pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300
Ps,
Duty cycle < 2.0%.
3. E
AS
of 21 mJ is based on starting T
J
= 25
°
C, L = 0.3 mH, I
AS
= 12.0 A, V
DD
= 27 V, V
GS
= 10 V. 100% test at L = 3 mH, I
AS
= 3.2 A .
©2009 Fairchild Semiconductor Corporation
FDMC7692S Rev.C1
2
www.fairchildsemi.com
FDMC7692S N-Channel Power Trench
®
SyncFET
TM
Typical Characteristics
T
J
= 25 °C unless otherwise noted
45
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
V
GS
= 10 V
3.5
3.0
2.5
2.0
1.5
1.0
V
GS
= 10 V
V
GS
= 3.5 V
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 6 V
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5% MAX
36
I
D
,
DRAIN CURRENT (A)
V
GS
= 6 V
V
GS
= 4.5 V
V
GS
= 4 V
27
18
V
GS
= 3.5 V
9
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5% MAX
0
0
0.2
0.4
0.6
0.8
1.0
0.5
0
9
18
27
36
45
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
40
SOURCE ON-RESISTANCE
(
m
:
)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.6
1.4
1.2
1.0
0.8
0.6
-75
I
D
= 12.5 A
V
GS
= 10 V
I
D
= 12.5 A
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5% MAX
30
r
DS(on),
DRAIN TO
20
T
J
= 125
o
C
10
T
J
= 25
o
C
-50
-25
0
25 50 75 100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
2
4
6
8
10
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
45
36
V
DS
= 5 V
Figure 4. On-Resistance vs Gate to
Source Voltage
100
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0 V
PULSE DURATION = 80
P
s
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
10
T
J
= 125
o
C
27
T
J
= 125
o
C
1
T
J
= 25
o
C
18
T
J
= 25
o
C
0.1
0.01
T
J
= -55
o
C
9
T
J
= -55
o
C
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDMC7692S Rev.C1
3
www.fairchildsemi.com
FDMC7692S N-Channel Power Trench
®
SyncFET
TM
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
DSS
= 12.5 A
V
DD
= 10 V
3000
1000
V
DD
= 15 V
CAPACITANCE (pF)
8
6
V
DD
= 20 V
C
iss
C
oss
4
2
0
0
3
6
9
12
15
18
Q
g
, GATE CHARGE (nC)
100
C
rss
f = 1 MHz
V
GS
= 0 V
10
0.1
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
100
20
I
AS
, AVALANCHE CURRENT (A)
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
10
10
100 us
1ms
T
J
= 100
o
C
1
THIS AREA IS
LIMITED BY r
DS(on)
10 ms
100 ms
1s
10 s
DC
T
J
= 125
o
C
0.1
SINGLE PULSE
T
J
= MAX RATED
R
T
JA
= 125
o
C/W
T
A
= 25
o
C
1
0.001
0.01
0.1
1
10
50
0.01
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
Figure 10. Forward Bias Safe
Operating Area
SINGLE PULSE
R
T
JA
= 125 C/W
T
A
= 25 C
o
o
V
GS
= 10V
100
10
1
0.5
-4
10
10
-3
10
-2
10
-1
10
0
10
1
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDMC7692S Rev.C1
4
www.fairchildsemi.com
FDMC7692S N-Channel Power Trench
®
SyncFET
TM
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
T
JA
DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
1E-3
R
T
JA
= 125 C/W
o
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
TJA
x R
TJA
+ T
A
1E-4
-4
10
10
-3
10
-2
10
-1
10
0
10
1
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDMC7692S Rev.C1
5
www.fairchildsemi.com
