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FDP070AN06A0 — N-Channel PowerTrench
®
MOSFET
October 2013
FDP070AN06A0
60
V,
80
A,
7
mΩ
Features
N-Channel PowerTrench
®
MOSFET
Applications
•
Synchronous Rectification for ATX / Server / Telecom PSU
•
Battery Protection Circuit
•
Motor Drives and Uninterruptible Power Supplies
•
R
DS(on)
=
6.1
mΩ (Typ.) @ V
GS
= 10 V, I
D
=
80
A
•
Q
g(tot)
=
51
nC (Typ.) @ V
GS
= 10 V
•
Low Miller Charge
•
Low Q
rr
Body Diode
•
UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82567
D
GD
S
G
TO-220
S
MOSFET Maximum Ratings
T
C
= 25°C unless
otherwise noted.
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Continuous (T
C
< 97
o
C, V
GS
= 10V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
Parameter
FDP070AN06A0
60
±20
80
Figure 4
190
175
1.17
-55 to 175
Unit
V
V
A
A
mJ
W/
o
C
o
Drain Current
W
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max. (Note 2)
