FDP10N50F / FDPF10N50FT N-Channel MOSFET
FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω
Features
• R
DS(on)
= 0.71Ω ( Typ.) @ V
GS
= 10V, I
D
= 4.5A
• Low Gate Charge ( Typ. 18nC)
• Low C
rss
( Typ. 10pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
UniFET
TM
January 2009
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G
G D S
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
Parameter
FDP10N50F
FDPF10N50FT
500
±30
9*
5.4*
36*
364
9
12.5
20
Units
V
V
A
A
mJ
A
mJ
V/ns
-Continuous (T
C
= 25 C)
-Continuous (T
C
=
- Pulsed
o
9
5.4
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
125
1.0
-55 to +150
300
36
100
o
C)
Single Pulsed Avalanche Energy
42
0.33
W
W/
o
C
o
o
- Derate above 25 C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FDP10N50F
1.0
62.5
FDPF10N50FT
3.0
62.5
Units
o
C/W
©2009 Fairchild Semiconductor Corporation
FDP10N50F / FDPF10N50FT Rev. A
1
www.fairchildsemi.com
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
FDP10N50F
FDPF10N50FT
Device
FDP10N50F
FDPF10N50FT
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250μA, V
GS
= 0V, T
J
= 25
o
C
I
D
= 250μA, Referenced to 25
o
C
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
=
V
GS
= ±30V, V
DS
= 0V
125
o
C
500
-
-
-
-
-
0.5
-
-
-
-
-
10
100
±100
V
V/
o
C
μA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250μA
V
GS
= 10V, I
D
= 4.5A
V
DS
= 20V, I
D
= 4.5A
(Note 4)
3.0
-
-
-
0.71
8.5
5.0
0.85
-
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 400V, I
D
= 10A
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
(Note 4, 5)
880
120
10
18
5
7.5
1170
160
15
24
-
-
pF
pF
pF
nC
nC
nC
-
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 250V, I
D
= 10A
R
G
= 25Ω
(Note 4, 5)
-
-
-
-
20
40
45
30
50
90
100
70
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 9A
V
GS
= 0V, I
SD
= 9A
dI
F
/dt = 100A/μs
(Note 4)
-
-
-
-
-
-
-
-
95
0.2
9
60
1.5
-
-
A
A
V
ns
μC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 9mH, I
AS
= 9A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3: I
SD
≤
8A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4: Pulse Test: Pulse width
≤
300μs, Duty Cycle
≤
2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP10N50F / FDPF10N50FT Rev. A
2
www.fairchildsemi.com
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
10
I
D
,Drain Current[A]
V
GS
=
15.0 V
12.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Figure 2. Transfer Characteristics
30
10
I
D
,Drain Current[A]
150 C
o
25 C
-55 C
o
o
1
1
*Notes:
1. 250
μ
s Pulse Test
0.1
0.1
2. T
C
= 25 C
o
1
V
DS
,Drain-Source Voltage[V]
10
0.1
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
2
4
6
8
V
GS
,Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.4
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30
R
DS(ON)
[
Ω
]
,
Drain-Source On-Resistance
1.2
I
S
, Reverse Drain Current [A]
10
150 C
25 C
o
o
1.0
V
GS
= 10V
V
GS
= 20V
1
0.8
0.6
*Note: T
C
= 25 C
o
*Notes:
1. V
GS
= 0V
0
4
8
12
I
D
, Drain Current [A]
16
20
0.1
0.0
2. 250
μ
s Pulse Test
0.4
0.8
1.2
V
SD
, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
2000
V
GS
, Gate-Source Voltage [V]
Ciss = Cgs + Cgd
(
Cds = shorted
)
Coss = Cds + Cgd
Crss = Cgd
Figure 6. Gate Charge Characteristics
10
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
C
oss
1500
Capacitances [pF]
*Note:
1. V
GS
= 0V
2. f = 1MHz
8
6
1000
C
iss
4
500
C
rss
2
*Note: I
D
= 10A
0
0.1
1
10
V
DS
, Drain-Source Voltage [V]
30
0
0
4
8
12
16
Q
g
, Total Gate Charge [nC]
20
FDP10N50F / FDPF10N50FT Rev. A
3
www.fairchildsemi.com
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
Figure 8. Maximum Safe Operating Area
- FDPF10N50FT
50
20
μ
s
100
μ
s
1ms
10ms
1.1
I
D
, Drain Current [A]
10
1.0
1
Operation in This Area
is Limited by R
DS(on)
DC
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 250
μ
A
0.1
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.8
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
0.01
1
10
100
V
DS
, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
vs. Case Temperature
10
8
I
D
, Drain Current [A]
6
4
2
0
25
50
75
100
125
o
T
C
, Case Temperature
[
C
]
150
Figure 10. Transient Thermal Response Curve - FDPF10N50FT
5
Thermal Response
[
Z
θ
JC
]
0.5
0.2
0.1
1
0.1
0.05
0.02
0.01
P
DM
*Notes:
t
1
t
2
o
0.01
Single pulse
0.005
-5
10
1. Z
θ
JC
(t) = 3.0 C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
10
-4
10
10
10
1
Rectangular Pulse Duration [sec]
-3
-2
-1
10
10
2
FDP10N50F / FDPF10N50FT Rev. A
4
www.fairchildsemi.com
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP10N50F / FDPF10N50FT Rev. A
5
www.fairchildsemi.com
