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FDS6690AS
30V N-Channel PowerTrench
®
SyncFET™
May
2008
FDS6690AS
30V N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge.
The FDS6690AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
tm
Features
•
10 A, 30 V.
R
DS(ON)
max= 12 mΩ @ V
GS
= 10 V
R
DS(ON)
max= 15 mΩ @ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky diode
Low gate charge (16nC typical)
High performance trench technology for extremely low
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
T
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 10A,
d
iF
/d
t
= 300 A/µs
(Note 3)
3.5
(Note 2)
A
V
nS
nC
I
S
= 3.5 A
0.6
16
9
0.7
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
