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FDS6990A

June 2003

FDS6990A

Dual N-Channel Logic Level PowerTrench

MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

•

7.5 A, 30 V.

DS(ON)

= 18 mΩ @ V

= 10 V

DS(ON)

= 23 mΩ @ V

= 4.5 V

•

Fast switching speed

•

Low gate charge

•

High performance trench technology for extremely

low R

DS(ON)

•

High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

– Continuous

– Pulsed

=25

C unless otherwise noted

Parameter

Ratings

(Note 1a)

Units

7.5

1.6

1.0

0.9

–55 to +150

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range

°C

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

FDS6990A

Device

FDS6990A

Reel Size

13’’

Tape width

12mm

Quantity

2500 units

Fairchild Semiconductor Corporation

FDS6990A Rev D(W)

FDS6990A

Electrical Characteristics

Symbol

DSS

∆BV

DSS

∆T

DSS

GSS

= 25°C unless otherwise noted

Parameter

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate–Source Leakage

(Note 2)

Test Conditions

= 0 V,

= 250

µA

= 250

µA,

Referenced to 25°C

= 24 V, V

= 0 V

= 24 V, V

= 0 V, T

= 55°C

±20

V, V

= 0 V

= V

= 250

µA

= 250

µA,

Referenced to 25°C

= 10 V, I

= 7.5 A

= 4.5 V, I

= 6.5 A

= 10 V, I

= 7.5 A,T

= 125°C

= 10 V, V

= 5 V

= 5 V,

= 7.5 A

Min

Typ

Max Units

Off Characteristics

±100

mV/°C

µA

On Characteristics

GS(th)

∆V

GS(th)

∆T

DS(on)

Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source

On–Resistance

On–State Drain Current

Forward Transconductance

1.9

–4

mV/°C

mΩ

D(on)

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

(Note 2)

= 15 V,

f = 1.0 MHz

= 0 V,

1235

295

120

2.3

Ω

= 15 mV, f = 1.0 MHz

Switching Characteristics

d(on)

d(off)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= 15 V,

= 10 V,

= 1 A,

GEN

= 6

Ω

= 15 V,

= 5 V

= 7.5 A,

3.5

4.2

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward

Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

= 0 V,

= 7.5 A,

= 1.3 A

(Note 2)

1.3

0.7

1.2

= 100 A/µs

Notes:

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) 78°C/W when

mounted on a 0.5in

pad of 2 oz copper

b) 125°C/W when

mounted on a 0.02

pad of 2 oz

copper

c) 135°C/W when mounted on a

minimum mounting pad.

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS6990A Rev D(W)

FDS6990A

Typical Characteristics

= 10.0V

4.5V

3.0V

4.0V

3.5V

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

1.8

, DRAIN CURRENT (A)

1.6

= 3.5V

1.4

4.0V

1.2

4.5V

5.0V

6.0V

10.0V

0.5

1.5

, DRAIN TO SOURCE VOLTAGE (V)

0.8

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

DS(ON)

, ON-RESISTANCE (OHM)

= 7.5A

= 10.0V

0.05

= 3.75A

0.04

1.4

1.2

0.03

= 125

0.02

= 25

0.01

0.8

0.6

-50

-25

100

, JUNCTION TEMPERATURE (

125

150

, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

, REVERSE DRAIN CURRENT (A)

= 5V

= 0V

= 125

-55

0.01

, DRAIN CURRENT (A)

= 125

0.1

-55

0.001

1.5

2.5

, GATE TO SOURCE VOLTAGE (V)

3.5

0.0001

0.2

0.4

0.6

0.8

, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6990A Rev D(W)

FDS6990A

Typical Characteristics

, GATE-SOURCE VOLTAGE (V)

2000

= 7.5A

= 10V

15V

1600

20V

CAPACITANCE (pF)

f = 1 MHz

= 0 V

1200

iss

800

oss

400

rss

, GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100

P(pk), PEAK TRANSIENT POWER (W)

Figure 8. Capacitance Characteristics.

100µs

, DRAIN CURRENT (A)

DS(ON)

LIMIT

1ms

10ms

100ms

SINGLE PULSE

θJA

= 135°C/W

= 25°C

10s

= 10.0V

SINGLE PULSE

θJA

= 135

C/W

= 25

0.1

0.01

0.1

, DRAIN-SOURCE VOLTAGE (V)

100

0.001

0.01

0.1

, TIME (sec)

100

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

D = 0.5

0.2

θJA

(t) = r(t) * R

θJA

= 135 C/W

P(pk)

- T

= P * R

θJA

(t)

Duty Cycle, D = t

/ t

0.1

0.05

0.02

0.01

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

, TIME (sec)

100

1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS6990A Rev D(W)