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FDS8870

MOSFET N-CH 30V 18A 8SOIC

器件类别：分立半导体    晶体管   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
SMALL OUTLINE, R-PDSO-G8
制造商包装代码
751EB
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Samacsys Description
FDS8870, N-channel MOSFET Transistor 18 A 30 V, 8-Pin SOIC
雪崩能效等级（Eas）
420 mJ
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
30 V
最大漏极电流 (Abs) (ID)
17 A
最大漏极电流 (ID)
18 A
最大漏源导通电阻
0.0042 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PDSO-G8
JESD-609代码
e4
湿度敏感等级
1
元件数量
1
端子数量
8
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
2.5 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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FDS8870 N-Channel PowerTrench
®
MOSFET
April 2007
FDS8870
N-Channel PowerTrench
®
MOSFET
30V, 18A, 4.2mΩ
Features
r
DS(on)
= 4.2mΩ, V
GS
= 10V, I
D
= 18A
r
DS(on)
= 4.9mΩ, V
GS
= 4.5V, I
D
= 17A
High performance trench technology for extremely low
r
DS(on)
Low gate charge
High power and current handling capability
RoHS Compliant
tm
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Applications
DC/DC converters
Branding Dash
5
5
4
3
2
1
6
7
1
2
3
4
8
SO-8
©2007 Fairchild Semiconductor Corporation
FDS8870 Rev. B
1
www.fairchildsemi.com
FDS8870 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 25 C, V
GS
= 4.5V, R
θJA
= 50 C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
30
±20
18
17
134
420
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
25
50
125
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8870
Device
FDS8870
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
T
J
=
150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
r
DS(on)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 18A, V
GS
= 10V
Drain to Source On Resistance
I
D
= 17A, V
GS
= 4.5V
I
D
= 18A, V
GS
= 10V,
T
J
= 150
o
C
1.2
-
-
-
-
3.5
3.9
5.5
2.5
4.2
4.9
7.2
mΩ
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 18A
I
g
= 1.0mA
-
-
-
0.5
-
-
-
-
-
-
4615
900
450
2.0
85
45
4.6
11
6.4
15
-
-
-
3.5
112
62
6.0
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
©2007 Fairchild Semiconductor Corporation
FDS8870 Rev. B
2
www.fairchildsemi.com
FDS8870 N-Channel PowerTrench
®
MOSFET
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 15V, I
D
= 18A
V
GS
= 10V, R
GS
= 3.3Ω
-
-
-
-
-
-
-
9
48
60
21
-
86
-
-
-
-
122
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 18A
I
SD
= 2.1A
I
SD
= 18A, dI
SD
/dt = 100A/µs
I
SD
= 18A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
37
22
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 1mH, I
AS
= 29A, V
DD
= 30V, V
GS
= 10V.
2:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
a) 50°C/W when mounted on a 1in
2
pad of 2 oz copper.
b) 125°C/W when mounted on a minimum pad.
©2007 Fairchild Semiconductor Corporation
FDS8870 Rev. B
3
www.fairchildsemi.com
FDS8870 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
1.2
1.0
0.8
I
D
, DRAIN CURRENT (A)
15
V
GS
= 10V
20
POWER DISSIPATION MULTIPLIER
V
GS
= 4.5V
10
0.6
0.4
5
R
θJA
=50
o
C/W
0
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (
o
C)
150
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
R
θ
JA
= 125 C/W
o
0.0001
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
3000
P
(PK)
, PEAK TRANSIENT POWER (W)
1000
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125 C/W
T
A
= 25 C
o
o
100
10
1
0.5
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 4. Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDS8870 Rev. B
4
www.fairchildsemi.com
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