To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench
®
MOSFET
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= – 250
µA
Min
– 20
Typ Max
Units
V
Off Characteristics
I
D
= – 250
µA,
Referenced to 25°C
V
DS
= – 16 V,
V
GS
=
±
8 V,
V
GS
= 0 V
V
DS
= 0 V
– 0.65
– 1.0
–3
15
–3
±
10
– 1.5
mV/°C
µA
µA
V
mV/°C
Ω
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= – 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= – 4.5 V, I
D
= – 150 mA
V
GS
= – 2.5 V, I
D
= – 125 mA
V
GS
= – 1.8 V, I
D
= – 100 mA
V
GS
= – 1.5 V，I
D
= – 30 mA
V
GS
= – 4.5 V, I
D
= – 150mA,
T
J
= 125°C
V
DS
= – 5 V,
I
D
= – 150 mA
8
12
15
20
12
0.7
g
FS
C
iss
C
oss
C
rss
Forward Transconductance
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= – 10 V,
f = 1.0 MHz
V
GS
= 0 V,
100
30
15
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
t
rr
Q
rr
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= – 10 V, I
D
= – 0.5 A,
V
GS
= – 4.5 V, R
GEN
= 6
Ω
6
13
8
1
12
23
16
2
1.4
ns
ns
ns
ns
nC
nC
nC
V
DS
= – 10 V, I
D
= – 150 mA,
V
GS
= – 4.5 V
1.0
0.2
0.3
Drain–Source Diode Characteristics and Maximum Ratings
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= – 150 mA
(Note 2)
– 0.8
11
2
– 1.2
V
ns
nC
I
F
= – 150 mA,
dI
F
/dt = 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
200°C/W when
2
mounted on a 1in pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY101PZ Rev A
www.fairchildsemi.com
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench
®
MOSFET
Typical Characteristics
1
5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -4.5V
-2.5V
V
GS
=-1.5V
-I
D
, DRAIN CURRENT (A)
0.8
-3.5V
0.6
-3.0V
-2.0V
4
-1.8V
3
0.4
-1.8V
2
-2.0V
-2.5V
-3.0V
-3.5V
0.2
-1.5V
0
0
0.5
1
1.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
1
-4.5V
0
0
0.2
0.4
0.6
-I
D
, DRAIN CURRENT (A)
0.8
1
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -0.15A
V
GS
= -4.5V
I
D
= -0.075A
1.75
1.5
1.25
T
A
= 125
o
C
1
0.75
0.5
0.25
1.4
1.2
1
0.8
T
A
= 25
o
C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
0
2
4
6
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
10
igure 3. On-Resistance Variation with
Temperature.
1
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
V
GS
= 0V
-I
D
, DRAIN CURRENT (A)
0.8
0.1
0.6
0.01
T
A
= 125
o
C
25
o
C
-55
o
C
0.4
T
A
= 125
o
C
-55
o
C
0.001
0.2
25 C
o
0
0.5
1.5
2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
1
2.5
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY101PZ Rev A
www.fairchildsemi.com
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench
®
MOSFET
Typical Characteristics
10
150
I
D
= -0.15A
f = 1 MHz
V
GS
= 0 V
125
-15V
CAPACITANCE (pF)
V
DS
= -5V
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
100
C
iss
75
50
6
-10V
4
C
oss
2
25
C
rss
0
0
0.5
1
1.5
Q
g
, GATE CHARGE (nC)
2
2.5
0
0
4
8
12
16
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
10
P(pk), PEAK TRANSIENT POWER (W)
10
Figure 8. Capacitance Characteristics.
-I
D
, DRAIN CURRENT (A)
8
SINGLE PULSE
R
θJA
= 280°C/W
T
A
= 25°C
1
100µs
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
10s
DC
6
4
0.1
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 280
o
C/W
T
A
= 25 C
o
2
0.01
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) * R
θJA
R
θJA
=280 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.1
0.01
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
