FERD20L60C
60 V field-effect rectifier diode
Datasheet - production data
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K
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Description
The device is based on a proprietary technology
that achieves the best in class V
F
/I
R
trade-off for a
given silicon surface.
This 60 V rectifier has been optimized for use in
confined applications where both efficiency and
thermal performance are key.
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K
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K
K
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This device is suitable for use in adapters and
chargers.
Table 1: Device summary
Symbol
I
F(AV)
Value
2 x 10 A
60 V
0.365 V
150 °C
TO-220AB
D²PAK
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Reduced leakage current
Low forward voltage drop
High frequency operation
V
RRM
V
F
(typ.)
T
j
(max.)
September 2017
DocID030962 Rev 1
1/12
www.st.com
This is information on a product in full production.
Characteristics
FERD20L60C
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Notes:
(1)
(dP
tot
/dT
j
)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5,
square wave
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
(1)
Per diode
T
C
= 130 °C
Per device
Value
60
30
10
Unit
V
A
A
20
140
-65 to +175
+150
A
°C
°C
t
p
= 10 ms sinusoidal
< (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal resistance parameters
Symbol
R
th(j-c)
R
th(c)
Junction to case
Total
Coupling
Parameter
Per diode
Max. value
2.2
1.3
0.4
°C/W
Unit
Table 4: Static electrical characteristics, per diode
Symbol
Parameter
Test conditions
T
j
= 25 °C
I
R
(1)
Reverse leakage current
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
F
(2)
Forward voltage drop
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Notes:
(1)
(2)
Min.
-
-
-
-
-
-
-
-
-
Typ.
Max.
970
Unit
µA
mA
V
R
= V
RRM
V
R
= 45 V
I
F
= 2 A
30
17
0.305
0.25
0.38
0.365
0.48
0.51
60
34
0.35
0.29
0.425
0.415
0.535
0.575
I
F
= 5 A
V
I
F
= 10 A
Pulse test: t
p
= 5 ms, δ < 2%
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.255 x I
F(AV)
+ 0.032 x I
F2(RMS)
2/12
DocID030962 Rev 1
FERD20L60C
Characteristics
1.1
Characteristics (curves)
Figure 1: Average forward current versus ambient
temperature (δ = 0.5, per diode)
25
Figure 2: Relative variation of thermal impedance
junction to case versus pulse duration
1.0
0.9
I
F(AV)
(A)
R
th(j-a)
= R
th(j-c)
Z
th(j-c)
/R
th(j-c)
20
0.8
0.7
15
0.6
0.5
10
T
0.4
0.3
0.2
δ
=tp/T
tp
Single pulse
5
T
amb
(°C)
50
75
100
125
150
0.1
0
0
25
t
p
(s)
0.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 3: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
1.E+02
Figure 4: Junction capacitance versus reverse
voltage applied (typical values, per diode)
10000
I
R
(mA)
T
j
= 150 °C
T
j
= 125 °C
C(pF)
F = 1 MHz
V
osc
= 30 mV
RMS
T
j
= 25 °C
1.E+01
T
j
= 100 °C
T
j
= 75 °C
1000
1.E+00
T
j
= 50 °C
T
j
= 25 °C
1.E-01
100
V
R
(V)
V
R
(V)
1.E-02
0
10
20
30
40
50
60
1
10
100
Figure 5: Forward voltage drop versus forward
current (typical values, per diode)
Figure 6: Forward voltage drop versus forward
current (typical values, per diode)
DocID030962 Rev 1
3/12
Characteristics
FERD20L60C
Figure 7: Thermal resistance junction to ambient versus copper surface under tab for D²PAK
(typical values)
R
th (j-a)
(°C/W )
80
D²PAK
70
60
50
40
30
Epoxy printed board FR4, copper thickness = 35 µm
20
10
0
0
5
10
15
20
25
30
35
40
S
Cu
(cm²)
4/12
DocID030962 Rev 1
FERD20L60C
Package
information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Cooling method: by conduction (C)
Epoxy meets UL94,V0
Recommended torque value: 0.55 N·m (for TO-220AB)
Maximum torque value: 0.6 N·m (for TO-220AB)
DocID030962 Rev 1
5/12
