技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IP4V
PrimePACK™2模块采用第四代沟½栅/场终止IGBT4和第四代发射极控制二极管带有温度检测NTC
PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
初步数据/PreliminaryData
V
CES
= 1200V
I
C nom
= 600A / I
CRM
= 1200A
典型应用
•
商业性农用½辆
电气特性
•
提高工½结温T
vjop
•
高直流电压稳定性
•
高短路½力，自限制短路电流
•
½V
CEsat
•
无与伦比的坚固性
•
V
CEsat
带正温度系数
机械特性
•
4kV交流1分钟绝缘
•
封装的CTI>400
•
高爬电距离和电气间隙
•
高功率循环和温度循环½力
•
高功率密度
•
½热阻衬底
TypicalApplications
• CommercialAgricultureVehicles
ElectricalFeatures
• ExtendedOperationTemperatureT
vjop
• HighDCStability
•
High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• LowV
CEsat
• UnbeatableRobustness
• V
CEsat
withpositiveTemperatureCoefficient
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• SubstrateforLowThermalResistance
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-11-26
revision:2.0
1
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:TA
approvedby:DTS
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IP4V
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
集电极－发射极电压
Collector-emittervoltage
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总功率损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
C
= 100°C, T
vj max
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 175°C
V
CES
1200
600
1200
3,35
+/-20
min.
I
C
= 600 A, V
GE
= 15 V
I
C
= 600 A, V
GE
= 15 V
I
C
= 600 A, V
GE
= 15 V
I
C
= 23,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 600 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 2,2
Ω
I
C
= 600 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 2,2
Ω
I
C
= 600 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 2,2
Ω
I
C
= 600 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 2,2
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
5,0
typ.
1,70
2,00
2,10
5,8
4,40
1,8
37,0
2,05
0,21
0,24
0,24
0,12
0,12
0,13
0,70
0,80
0,85
0,15
0,20
0,20
52,0
77,0
83,0
81,0
105
115
2400
14,0
150
max.
2,05
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
V
A
A
kW
V
I
C nom
I
CRM
P
tot
V
GES
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗½量(每脉冲)
Turn-onenergylossperpulse
关断损耗½量(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
preparedby:TA
approvedby:DTS
6,5
5,0
400
t
r
t
d off
t
f
I
C
= 600 A, V
CE
= 600 V, L
S
= 45 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 3800 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 2,2
Ω
T
vj
= 150°C
I
C
= 600 A, V
CE
= 600 V, L
S
= 45 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 3100 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 2,2
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
dateofpublication:2013-11-26
revision:2.0
2
t
P
≤
10 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJC
R
thCH
T
vj op
-40
45,0 K/kW
K/kW
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IP4V
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 600 A, V
GE
= 0 V
I
F
= 600 A, V
GE
= 0 V
I
F
= 600 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
1200
600
1200
51,0
49,0
typ.
1,80
1,75
1,70
350
430
440
60,0
110
120
25,0
42,0
50,0
24,0
150
max.
2,20
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
V
A
A
kA²s
kA²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 600 A, - di
F
/dt = 3800 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
I
F
= 600 A, - di
F
/dt = 3800 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
I
F
= 600 A, - di
F
/dt = 3800 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
I
RM
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
75,0 K/kW
K/kW
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
R100偏差
DeviationofR100
耗散功率
Powerdissipation
B-值
B-value
B-值
B-value
B-值
B-value
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
-5
typ.
5,00
3375
3411
3433
max.
5
20,0
kΩ
%
mW
K
K
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IP4V
初步数据
PreliminaryData
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
每个模块/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
C
=25°C,每个开关/perswitch
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
V
ISOL
CTI
min.
4,0
Cu
Al
2
O
3
33,0
33,0
19,0
19,0
> 400
typ.
4,50
18
0,30
-
-
-
825
150
6,00
2,1
10
max.
K/kW
nH
mΩ
°C
Nm
Nm
Nm
g
kV
模块/Module
绝缘测试电压
Isolationtestvoltage
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
外壳－散热器热阻
Thermalresistance,casetoheatsink
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
mm
mm
R
thCH
L
sCE
R
CC'+EE'
T
stg
M
-40
3,00
1,8
M
8,0
G
重量
Weight
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12IP4V
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
T
vj
=150°C
1200
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
V
GE
=15V
1200
1100
1000
900
800
700
I
C
[A]
600
500
400
300
200
100
0
0,0
0,5
1,0
1,5
2,0
V
CE
[V]
2,5
3,0
3,5
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
1100
1000
900
800
700
I
C
[A]
600
500
400
300
200
100
0
0,0
0,5
V
GE
= 19V
V
GE
= 17V
V
GE
= 15V
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
1,0
1,5
2,0
2,5 3,0
V
CE
[V]
3,5
4,0
4,5
5,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
I
C
=f(V
GE
)
V
CE
=20V
1200
1100
1000
900
800
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
E
on
=f(I
C
),E
off
=f(I
C
)
V
GE
=±15V,R
Gon
=2.2Ω,R
Goff
=2.2Ω,V
CE
=600V
240
210
180
150
E
on
, T
vj
= 125°C
E
on
, T
vj
= 150°C
E
off
, T
vj
= 125°C
E
off
, T
vj
= 150°C
700
600
500
90
400
300
200
30
100
0
5
6
7
8
9
V
GE
[V]
10
11
12
0
0
120 240 360 480 600 720 840 960 1080 1200
I
C
[A]
60
E [mJ]
revision:2.0
5
I
C
[A]
120
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
NXP MCU
