FHR20X
GaAs FET & HEMT Chips
FEATURES
•
•
•
•
Low Noise Figure: 0.75dB (Typ.)@f=18GHz
High Associated Gain: 10.0dB (Typ.)@f=18GHz
Lg
≤
0.15µm, Wg = 100µm
Gold Gate Metallization for High Reliability
DESCRIPTION
The FHR20X is a Super High Electron Mobility Transistor
TM
(SuperHEMT ) intended for general purpose, ultra-low noise and
high gain amplifiers in the 2-30GHz frequency range. The device is
well suited for telecommunication and low noise millimeter wave
applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.1 and -0.025 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Symbol
VDS
VGS
Ptot
Tstg
Tch
Condition
Rating
3.5
-3.0
100
-65 to +175
175
Unit
V
V
mW
°C
°C
Note
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
Rth
Test Conditions
VDS = 2V, VGS = 0V
VDS = 2V, IDS = 5mA
VDS = 2V, IDS = 0.5mA
IGS = -5µA
VDS = 2V
IDS = 5mA
f = 18GHz
Channel to Case
Min.
5
20
-0.1
-3.0
-
8.5
-
Limit
Typ. Max.
15
30
-0.7
-
0.75
10.0
450
30
-
-1.5
-
0.90
-
600
Unit
mA
mS
V
V
dB
dB
°C/W
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.2
July 1999
1
FHR20X
GaAs FET & HEMT Chips
POWER DERATING CURVE
150
Total Power Dissipation (W)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
20
Drain Current (mA)
VGS =0V
15
-0.2V
100
10
50
5
-0.4V
-0.6V
-0.8V
3
0
0
50
100
150
200
0
1
2
4
Ambient Temperature (°C)
Drain-Source Voltage (V)
NF & Gas vs. IDS
3 f=18GHz
VDS=2V
Noise Figure (dB)
2
Gas
11
Associated Gain (dB)
4
NF & Gas vs. Frequency
20
15
Gas
2
10
Associated Gain (dB)
VDS=2V
IDS=5mA
Noise Figure (dB)
3
10
1
NF
9
1
NF
5
0
0
5
10
15
8
0
2
4
6 810
20 30
0
Drain Current (mA)
NOISE PARAMETERS
VDS=2V, IDS=5mA
Freq.
(GHz)
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Γopt
(MAG) (ANG)
0.93
0.88
0.83
0.79
0.75
0.72
0.70
0.67
0.65
0.63
0.61
0.59
0.57
0.55
0.53
3.3
14.7
25.3
35.1
44.1
52.3
59.7
66.2
72.0
76.9
81.0
84.3
86.7
88.4
89.2
NFmin
(dB)
0.28
0.30
0.32
0.35
0.39
0.45
0.53
0.62
0.75
0.86
1.00
1.15
1.32
1.51
1.71
Rn/50
0.42
0.39
0.35
0.33
0.30
0.27
0.24
0.22
0.19
0.17
0.15
0.13
0.11
0.09
0.07
Frequency (GHz)
2
FHR20X
GaAs FET & HEMT Chips
+j50
+j25
+j100
30 GHz
15
10
20
10
5
25
S11
S22
+90°
S21
S12
25
+j250
+j10
5
0
10
30 GHz
25
50Ω
100
1 GHZ
1 GHZ
5
180°
1 GHZ
4
3
30 GHz
2
1
0.04
1 GHZ
0°
SCALE FOR |S21|
SCALE FOR |S12|
-j10
25
30 GHz
10
25
20
15
20
15
10
5
-j250
0.08
0.12
0.16
-j25
-j50
-j100
-90°
S-PARAMETERS
VDS = 2V, IDS = 5mA
FREQUENCY
(MHZ)
100
500
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
19000
20000
21000
22000
23000
24000
25000
26000
27000
28000
29000
30000
S11
MAG
1.000
1.000
0.998
0.993
0.984
0.972
0.956
0.938
0.917
0.893
0.867
0.840
0.811
0.781
0.751
0.720
0.689
0.659
0.630
0.602
0.576
0.553
0.531
0.513
0.497
0.485
0.477
0.473
0.472
0.475
0.481
0.491
S21
ANG
-0.5
-2.5
-5.1
-10.2
-15.3
-20.3
-25.4
-30.6
-35.7
-40.8
-46.0
-51.2
-56.4
-61.7
-67.1
-72.6
-78.1
-83.8
-89.6
-95.5
-101.6
-108.0
-114.5
-121.2
-128.1
-135.1
-142.3
-149.5
-156.7
-163.9
-170.9
-177.8
S12
ANG
179.4
177.2
174.3
168.7
163.1
157.4
151.8
146.3
140.7
135.2
129.8
124.4
119.0
113.7
108.5
103.3
98.2
93.1
88.1
83.2
78.3
73.5
68.7
64.0
59.3
54.7
50.0
45.4
40.8
36.3
31.7
27.1
S22
ANG
89.7
88.5
87.0
83.9
80.9
78.0
75.1
72.3
69.7
67.1
64.8
62.5
60.5
58.7
57.1
55.7
54.6
53.8
53.2
52.9
52.8
52.9
53.1
53.5
53.8
54.2
54.4
54.5
54.4
54.0
53.4
52.5
MAG
3.554
3.554
3.552
3.545
3.533
3.517
3.496
3.471
3.442
3.409
3.372
3.332
3.289
3.244
3.197
3.147
3.096
3.044
2.991
2.937
2.884
2.829
2.775
2.722
2.668
2.614
2.561
2.507
2.453
2.399
2.344
2.228
MAG
0.001
0.004
0.009
0.018
0.026
0.035
0.043
0.050
0.058
0.064
0.071
0.076
0.081
0.086
0.091
0.094
0.098
0.101
0.105
0.108
0.111
0.115
0.119
0.123
0.129
0.134
0.141
0.149
0.157
0.166
0.176
0.187
MAG
0.804
0.803
0.802
0.799
0.793
0.785
0.776
0.764
0.750
0.735
0.719
0.701
0.683
0.663
0.644
0.624
0.604
0.583
0.563
0.544
0.525
0.506
0.488
0.470
0.454
0.438
0.424
0.410
0.399
0.389
0.381
0.375
ANG
-0.3
-1.7
-3.3
-6.7
-10.0
-13.3
-16.5
-19.8
-23.0
-26.2
-29.4
-32.5
-35.6
-38.7
-41.8
-44.9
-48.0
-51.2
-54.4
-57.7
-61.1
-64.7
-68.5
-72.5
-76.8
-81.4
-86.4
-91.8
-97.7
-104.1
-111.0
-118.5
NOTE:*
The data includes bonding wires.
n: number of wires
Gate n=1 (0.3mm length, 25µm Dia Au wire)
Drain n=1 (0.3mm length, 25µm Dia Au wire)
Source n=4 (0.3mm length, 25µm Dia Au wire)
Download S-Parameters, click here
3
FHR20X
GaAs FET & HEMT Chips
CHIP OUTLINE
40
(Unit:
µm)
80
35
35
40
450±20
55
115
35
Die Thickness:
100±20µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
SuperHEMT
TM
is a trademark of Fujitsu Limited.
4
35
230
350±20
51单片机
