FJN965
FJN965
For Output Amplifier of Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
20
7
5
0.75
150
-55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
a
=25°C
unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Emitter Voltage
Emitter Base Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Band Width Product
Output Capacitance
Test Condition
I
C
=1mA, I
B
=0
I
C
=10µA, I
C
=0
V
CB
=10V, I
E
=0
V
CE
=10V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
=0.1A
V
CE
=6V, I
C
=50mA
V
CB
=20V, I
E
=0, f=1MHz
150
50
230
150
Min.
20
7
0.1
1
0.1
600
1
V
MHz
pF
Typ.
Max.
Units
V
V
µA
µA
µA
©2000 Fairchild Semiconductor International
Rev. A. June 2000
FJN965
Typical Characteristics
3.0
6
V =2V
CE
2.5
I
B
=7m
A
I
B
=6m
A
5
I
B
=4m
A
I
B
=3m
A
I
B
=2m
A
I
B
=1m
A
1.5
1.0
0.5
0.0
0.0
I
C
[A C LLE TO C R E T
], O C R U R N
I
C
[A C LLE TO C R E T
], O C R U R N
2.0
I
B
=5m
A
4
3
2
1
0.4
0.8
1.2
1.6
2.0
2.4
0
0.0
0.4
0.8
1.2
1.6
2.0
V
E
[V C LLE TO -E IT RV LT G
], O C R M TE O A E
C
V
E
[V B S -E ITTE TV LTA E
], A E M R O G
B
[Fig. 1] STATIC CHARACTERISTIC
[Fig. 2] TRANSFER CHARACTERISTIC
600
10
V
E
=2V
C
500
1
I
C
/ I
B
=30
400
V
CE(SAT)
[V S T R T NV LT G
], A U A IO O A E
h
FE
, D C R E TG IN
C URN A
300
0.1
200
0.01
100
0
0.01
0.1
1
10
1E
-3
0.01
0.1
1
10
I
C
[A C LLE T RC R E T
], O C O U R N
I
C
[A C LLE T RC R E T
], O C O U R N
[Fig. 3] DC CURRENT GAIN
[Fig. 4] COLLECTOR-EMITTER SATURATION
VOLTAGE
100
100
I
C
/ I
B
=30
80
10
I
E
=0, f =1M z
H
V
BE(SAT)
[V S T R T NV LT G
], A U A IO O A E
C
ob
[pF O T U C P C A C
], U P T A A IT N E
0.1
1
10
60
1
40
0.1
20
0.01
0.01
0
1
10
100
I
C
[A C LLE T RC R E T
], O C O U R N
V
B
[V C LLE T R A EV LT G
], O C O -B S O A E
C
[Fig. 5] BASE-EMITTER SATURATION VOLTAGE
[Fig. 6] OUTPUT CAPACITANCE
©2000 Fairchild Semiconductor International
Rev. A. June 2000
FJN965
Typical Characteristics
(continued)
1.0
100
S P
ingle ulse
0.8
10
T =25 C
a
I
CP
t =10m
s
I
C
t =1s
1
o
P
D
[W PO ERDISSIPATIO
], W
N
0.6
0.4
I
C
[A C LLE T RC R E T
], O C O U R N
0
25
o
0.1
0.2
0.0
50
75
100
125
150
0.01
0.1
1
10
100
T
a
[ C], AM TTEM ATU
BIEN
PER RE
V
E
[V S TU A NV LT G
], A R TIO O A E
C
[Fig. 7] POWER DERATING
[Fig. 8] FORWARD BIAS SAFE OPERATING AREA
©2000 Fairchild Semiconductor International
Rev. A. June 2000
FJN965
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A. June 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
DIY/开源硬件专区
