FJPF5027
FJPF5027
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
1100
800
7
3
10
1.5
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 1.5A, I
B1
= -I
B2
= 0.3A
L = 2mH, Clamped
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.2A
V
CE
= 5V, I
C
= 1A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.2A
V
CC
= 400V
I
C
= 5I
B1
= -2.5I
B2
= 2A
R
L
= 200Ω
60
15
0.5
3
0.3
10
8
Min.
1100
800
7
800
10
10
40
2
1.5
V
V
pF
MHz
µs
µs
µs
Typ.
Max.
Units
V
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJPF5027
Typical Characteristics
3.0
100
I
C
[A], COLLECTOR CURRENT
2.5
I
B
= 350mA
V
CE
= 5 V
T
C
= 125 C
o
T
C
= 75 C
o
2.0
h
FE
, DC CURRENT GAIN
I
B
= 150mA
I
B
= 100mA
T
C
= - 25 C
10
o
T
C
= 25 C
o
1.5
1.0
I
B
= 50mA
0.5
0.0
0
1
2
3
4
5
6
7
8
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
V
CE
(sat) [V], SATURATION VOLTAGE
10
T
C
= 125 C
T
C
= 75 C
T
C
= 25 C
o
o
o
V
BE
(sat) [V], SATURATION VOLTAGE
I
C
= 5 I
B
I
C
= 5 I
B
1
1
T
C
= - 25 C
o
T
C
= 25 C
o
T
C
= - 25 C
0.1
o
T
C
= 125 C
o
T
C
= 75 C
o
0.01
0.1
1
10
0.1
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Saturation Voltage
Figure 4. Saturation Voltage
100
I
C
[A], COLLECTOR CURRENT
10
I
C
[A], COLLECTOR CURRENT
10
I
C
MAX.(Pulse)
I
C
MAX(Continuous)
DC
10ms
1ms
100
µ
s
1
0.1
0.01
I
B1
=3A, R
B2
=0
L=1mH, V
CC
=20V
1
10
100
1000
1E-3
1
10
100
1000
10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Forward Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJPF5027
Typical Characteristics
(Continued)
10
70
60
t
F
, t
STG
[
µ
s], SWITCHING TIME
P
C
[W], POWER DISSIPATION
I
B1
=45mA, I
B2
=-0.5A
V
CC
=125V
1
10
50
1
40
30
0.1
20
10
0.01
0.1
0
0
25
50
o
75
100
125
150
175
I
C
[A], COLLECTOR CURRENT
T
C
[ C], CASE TEMPERATURE
Figure 7. Resistive Load Switching Characteristics
Figure 8. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJPF5027
Package Dimensions
TO-220F
3.30
±0.10
10.16
±0.20
(7.00)
ø3.18
±0.10
2.54
±0.20
(0.70)
6.68
±0.20
15.80
±0.20
(1.00x45°)
MAX1.47
9.75
±0.30
0.80
±0.10
(3
0
°
)
0.35
±0.10
2.54TYP
[2.54
±0.20
]
#1
0.50
–0.05
2.54TYP
[2.54
±0.20
]
4.70
±0.20
+0.10
2.76
±0.20
9.40
±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
15.87
±0.20
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2
C™
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I6
