This product complies with the RoHS Directive (EU 2002/95/EC).
FK350601
Silicon N-channel MOS FET
For switching circuits
Overview
FK350601 is N-channel small signal MOS FET employed small size surface
mounting package.
Package
Code
SMini3-F2-B
Name
Pin
1: Gate
2: Source
3: Drain
Features
Low drain-source ON resistance: R
DS(on)
typ. = 6
W
(V
GS
= 4.0 V)
High-speed switching
Small size surface mounting package: SMini3-F2-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Marking Symbo: CV
Internal Connection
(D)
3
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
60
±12
100
200
150
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
1
(G)
2
(S)
Publication date: January 2011
Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
FK350601
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on time
*
Turn-off time
*
2. *: Test circuit
V
DD
= 3
V
I
D
=
10 mA
R
L
=
300
Ω
V
GS
=
0 V to 3 V
V
IN
50
Ω
S
G
D
V
OUT
V
IN
90%
10%
10%
Symbol
V
DSS
I
DSS
I
GSS
V
TH
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
Conditions
I
D
= 1.0 mA, V
GS
= 0
V
DS
= 60 V, V
GS
= 0
V
GS
=
±10
V, V
DS
= 0
I
D
= 1.0
mA,
V
DS
= 3 V
I
D
= 10 mA, V
GS
= 2.5 V
I
D
= 10 mA, V
GS
= 4.0 V
I
D
= 10 mA, V
DS
= 3 V, f = 1 MHz
V
DS
= 3 V, V
GS
= 0, f = 1 MHz
V
DD
= 3 V, V
GS
= 0 V to 3 V,
I
D
= 10 mA
V
DD
= 3 V, V
GS
= 3 V to 0 V,
I
D
= 10 mA
Min
60
Typ
Max
1.0
±10
Unit
V
mA
mA
V
W
W
ms
pF
pF
pF
ns
ns
0.9
1.2
8
6
1.5
15
12
20
60
12
7
3
100
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
V
OUT
t
on
90%
t
off
2
Ver. BED
This product complies with the RoHS Directive (EU 2002/95/EC).
FK350601
FK350601_
I
D
-V
DS
I
D
V
DS
FK350601_
I
D
-V
GS
I
D
V
GS
FK350601_
R
DS(on)
-V
GS
R
DS(on)
V
GS
100
80
10
V
GS
= 4.0 V
Drain-source ON resistance R
DS(on)
(Ω)
T
a
= 25°C
10
2
V
DS
= 3 V
10
2
T
a
= 25°C
I
D
= 0.1 A
Drain current I
D
(mA)
Drain current I
D
(mA)
60
2.5 V
40
1
10
T
a
= 85°C
10
−1
25°C
1
20
2.1 V
1.8 V
0
0.1
0.2
0.3
0.4
0.5
10
−2
−30°C
0
10
−3
0
0.5
1.0
1.5
2.0
2.5
10
−1
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
FK350601_
R
DS(on)
-I
D
Gate-source voltage V
GS
(V)
FK350601_ P
D
-T
a
Gate-source voltage V
GS
(V)
Area of safe operation for the FK350601
R
DS(on)
I
D
P
D
T
a
Safe operation area
10
2
T
a
= 25°C
200
10
3
Drain-source ON resistance R
DS(on)
(Ω)
T
a
= 25°C
Glass epoxy board
(25.4 mm× 25.4 mm
×
t0.8 mm) coated with
copper foil, which has more than 300 mm
2
.
I
DP
= 0.2 A
100 ms
10 ms
1s
Limited by
Power dissipation P
D
(mW)
10
V
GS
= 2.5 V
4.0 V
Drain current I
D
(mA)
150
10
2
R
DS(on)
= 12
Ω
(max)
(V
GS
=
4.0
V)
100
DC
1
10
50
10
−1
10
−1
1
10
10
2
0
0
40
80
120
160
1
10
−2
10
−1
1
10
10
2
Drain current I
D
(mA)
FK350601_C
iss
, C
rss
, C
oss
-V
DS
Ambient temperature T
a
(°C)
FK350601
_|
Y
fs
|
-I
D
Drain-source voltage V
DS
(V)
C
iss
, C
rss
, C
oss
V
DS
Y
fs
I
D
Short-circuit input capacitance (Common source)
Ci
ss
,
Reverse transfer capacitance (Common source)
C
rss
,
Short-circuit output capacitance (Common source)
C
oss
(pF)
25
T
a
= 25°C
1
20
15
C
iss
10
C
oss
5
C
rss
0
Forward transfer admittance
|
Y
fs
|
(S)
T
a
= 25°C
V
DS
= 3 V
10
−1
10
−2
0
5
10
15
20
10
−3
1
10
10
2
10
3
Drain-source voltage
V
DS
(V)
Drain current I
D
(mA)
Ver. BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
FK350601
SMini3-F2-B
Unit: mm
2.00
±0.20
0.30
−
0.02
+0.05
3
1.25
±0.10
2.10
±0.10
1
(0.65)
2
(0.65)
0.13
−
0.02
+0.05
1.30
±0.10
(5°)
0.425
±0.05
(0.49)
(5°)
4
0 to 0.10
Ver. BED
0.90
±0.10
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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