FLM3439-25F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 44.5dBm (Typ.)
High Gain: G1dB = 10.5dB (Typ.)
High PAE:
η
add = 41% (Typ.)
Low IM3 = -46dBc@Po = 33.5dBm
Broad Band: 3.4 ~ 3.9GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM3439-25F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
93.7
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IK
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
∆G
IM3
Rth
∆T
ch
f = 3.9 GHz,
∆f
= 10 MHz
2-Tone Test
Pout = 33.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.4 ~ 3.9 GHz,
ZS=ZL= 50 ohm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 6800mA
VDS = 5V, IDS = 600mA
IGS = -600µA
Min.
-
-
-1.0
-5.0
43.5
9.5
-
-
-
-44
-
-
Limit
Typ. Max.
11.6 17.4
-
5800
-2.0
-
44.5
10.5
-3.5
-
-
-
Unit
A
mS
V
V
dBm
dB
mA
%
dB
dBc
°C/W
°C
6200 7600
41
-
-46
1.4
-
-
±0.6
-
1.6
100
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.0
December 2000
1
FLM3439-25F
C-Band Internally Matched FET
POWER DERATING CURVE
100
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 3.9 GHz
f2 = 3.91 GHz
2-tone test
-10
-20
-30
IM3
Total Power Dissipation (W)
Output Power (S.C.L.) (dBm)
80
41
39
37
35
33
31
60
40
20
-40
-50
0
50
100
150
200
21
23
25
27
29
Case Temperature (°C)
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V
P1dB
46
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 3.65 GHz
44
Output Power (dBm)
Output Power (dBm)
Pin=34.5dBm
42
40
38
36
Pout
44
31.5dBm
45
30
IM3 (dBc)
15
Pout
42
29.5dBm
η
add
40
27.5dBm
3.4
3.65
3.9
24
26
28
30
32
34
Frequency (GHz)
Input Power (dBm)
2
η
add (%)
FLM3439-25F
C-Band Internally Matched FET
+j50
+j25
3.8
S11
S22
+j100
+90°
S21
S12
3.9
3.2GHz
+j10
3.7
3.9
3.2GHz
4.0
3.3
4.1
3.4
+j250
3.8
3.6
0
10
25
4.0 3.3
4.1
3.4
3.5
3.7
3.5
3.6
-j10
-j250
3.4
3.3
4.1
3.2GHz
4.1
3.2GHz 3.3
3.5
3.8 4.0
180°
3.4
0.2
0.1
3.9
SCALE FOR |S12|
2
3.5 3.6
3.7
3.8
4
3.6
3.7
3.9
4.0
0°
SCALE FOR |S21|
6
8
-j25
-j50
-j100
-90°
S-PARAMETERS
VDS = 10V, IDS = 6800mA
FREQUENCY
(MHZ)
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
S11
MAG
.675
.591
.440
.198
.130
.403
.582
.679
.721
.739
S21
ANG
MAG
3.631
3.802
3.936
3.799
4.074
4.027
3.981
3.890
3.631
3.508
S12
ANG
MAG
.018
.025
.039
.058
.075
.083
.083
.079
.076
.073
S22
ANG
MAG
.753
.709
.631
.493
.273
.046
.134
.262
.343
.397
ANG
37.0
22.3
-0.5
-28.9
-62.6
-105.4
62.2
36.4
16.2
1.2
25.7
9.8
-14.5
-50.0
139.2
95.0
67.2
45.1
27.6
13.4
132.1
101.4
61.7
17.8
-29.2
-76.3
-118.4
-157.6
168.3
139.8
81.3
38.7
-6.7
-52.4
-101.5
-148.7
169.3
130.4
96.9
68.8
Download S-Parameters, click here
3
FLM3439-25F
C-Band Internally Matched FET
Case Style "IK"
Metal-Ceramic Hermetic Package
2.0 Min.
(0.079)
1
0.1
(0.004)
2
0.6
(0.024)
14.9
(0.587)
2.0 Min.
(0.079)
4-R 1.3±0.15
(0.051)
3
2.4±0.15
(0.094)
5.5 Max.
(0.217)
1.4
(0.055)
17.4±0.3
(0.685)
8.0±0.2
(0.315)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
20.4±0.3
(0.803)
24±0.5
(0.945)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI1199M200
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