FLM4450-4F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 36.5dBm (Typ.)
High Gain: G1dB = 11.0dB (Typ.)
High PAE:
η
add = 37% (Typ.)
Low IM3 = -46dBc@Po = 25.5dBm
Broad Band: 4.4 ~ 5.0GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM4450-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
25.0
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IB
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
∆G
IM3
Rth
∆T
ch
f = 5.0 GHz,
∆f
= 10 MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 4.4 ~ 5.0 GHz,
ZS=ZL= 50 ohm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1100mA
VDS = 5V, IDS = 90mA
IGS = -90µA
Min.
-
-
-1.0
-5.0
35.5
10.0
-
-
-
-44
-
-
Limit
Typ. Max.
1950 2900
-
1000
-2.0
-
36.5
11.0
-3.5
-
-
-
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
°C/W
°C
1100 1300
37
-
-46
5.0
-
-
±0.6
-
6.0
80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1
FLM4450-4F
C-Band Internally Matched FET
POWER DERATING CURVE
30
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 5.0 GHz
f2 = 5.01 GHz
2-tone test
Pout
Total Power Dissipation (W)
24
Output Power (S.C.L.) (dBm)
31
29
27
25
18
-20
-30
IM3
6
23
21
-40
-50
0
50
100
150
200
13
15
17
19
Case Temperature (°C)
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V
P1dB
Pin=28dBm
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 4.7 GHz
Output Power (dBm)
Output Power (dBm)
38
37
36
38
36
23dBm
Pout
34
32
30
η
add
IM3 (dBc)
45
30
15
12
25dBm
35
34
21dBm
33
18
4.4
4.6
4.8
5.0
20
22
24
26
28
Input Power (dBm)
Frequency (GHz)
2
η
add (%)
FLM4450-4F
C-Band Internally Matched FET
+j50
+j25
4.2GHz
4.8
4.6
S11
S22
+j100
+90°
S21
S12
+j10
4.4
5.0
5.2
4.6
50Ω
100
4.8
5.0
4.2GHz
250
+j250
4.2GHz
4.4
4.6
0
10
4.4
5.2
180°
0.2
0.1
4.2GHz
4.4
4.8
0°
4.6
2
5.0
5.2
4
6
5.0
8
SCALE FOR |S12|
-j10
-j25
-j50
-j100
S-PARAMETERS
VDS = 10V, IDS = 1100mA
FREQUENCY
(MHZ)
4200
4300
4400
4500
4600
4700
4800
4900
5000
5100
5200
S11
MAG
.388
.373
.397
.443
.471
.487
.455
.385
.256
.066
.170
ANG
-98.6
-139.1
-176.6
151.5
124.2
100.8
78.6
57.7
36.6
29.7
156.7
MAG
3.672
3.921
4.081
4.166
4.220
4.250
4.290
4.318
4.308
4.173
3.828
S21
ANG
126.7
107.5
87.9
68.3
49.0
29.8
10.1
-10.7
-32.9
-57.2
-82.7
MAG
.039
.052
.066
.078
.090
.100
.111
.118
.125
.125
.118
S12
ANG
62.7
42.8
22.9
3.8
-14.3
-31.6
-49.2
-66.9
-85.9
-106.4
-128.0
MAG
.740
.700
.640
.565
.487
.422
.354
.284
.236
.253
.317
S22
ANG
53.8
44.0
34.1
23.3
11.3
-2.2
-18.7
-41.1
-77.7
-124.7
-165.0
3
SCALE FOR |S21|
-j250
5.2
4.8
-90°
FLM4450-4F
C-Band Internally Matched FET
Case Style "IB"
Metal-Ceramic Hermetic Package
2.0 Min.
(0.079)
2-R 1.6±0.15
(0.063)
1
2
0.1
(0.004)
3
0.6
(0.024)
2.0 Min.
(0.079)
2.6±0.15
(0.102)
5.2 Max.
(0.205)
10.7
(0.421)
0.2 Max.
(0.008)
1.45
(0.059)
12.9±0.2
(0.508)
12.0
(0.422)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4
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