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FM130-L-H

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:FORMOSA

厂商官网:http://www.formosams.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
R-PDSO-F2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
其他特性
LOW POWER LOSS
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.5 V
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-F2
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大重复峰值反向电压
30 V
表面贴装
YES
技术
SCHOTTKY
端子形式
FLAT
端子位置
DUAL
Base Number Matches
1
文档预览
Chip Schottky Barrier Rectifier
FM120-L THRU FM1200-L
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 1
DS-121618
Chip Schottky Barrier Rectifier
FM120-L THRU FM1200-L
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. FM120-L-H.
Formosa MS
SMA-L
0.209(5.3)
0.185(4.7)
Package outline
0.012(0.3) Typ.
0.114(2.9)
0.091(2.3)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-214AC / SMA-L
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.032(0.8) Typ.
0.080(2.0)
0.063(1.6)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
R
θJA
R
θJC
C
J
T
STG
-65
68
34
120
+175
MIN.
TYP.
MAX.
1.0
30
0.5
10
O
O
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 100 C
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
20
30
40
50
60
80
100
150
200
V
RMS
*2
(V)
14
21
28
35
42
56
70
105
140
mA
C/W
C/W
pF
O
C
SYMBOLS
FM120-L
FM130-L
FM140-L
FM150-L
FM160-L
FM180-L
FM1100-L
FM1150-L
FM1200-L
*3
V
R
(V)
20
30
40
50
60
80
100
150
200
*4
V
F
(V)
Operating
temperature
T
J
, (
O
C)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.50
0.70
0.85
0.90
0.92
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage@I
F
=1.0A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 2
DS-121618
Rating and characteristic curves (FM120-L THRU FM1200-L)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
FM
0.6
0.4
0.2
0
0
20
40
60
80
10
3.0
1.0
50
~6
0V
80
~1
00
V
0~
15
20
~4
0V
LEAD TEMPERATURE,(°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
REVERSE LEAKAGE CURRENT, (mA)
FM
15
100
12
0-
L~
FM
14
0-
L
120
L~
0-
FM
12
140
00
-L
0
20
V
160
180
200
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
100
CHARACTERISTICS
20V~40V
50V~200V
10
JUNCTION CAPACITANCE,(pF)
1.0
T
J
=100°C
0.1
T
J
=25°C
0.01
.01
.05
.1
.5
1
5
10
50
100
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 3
DS-121618
Chip Schottky Barrier Rectifier
FM120-L THRU FM1200-L
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Formosa MS
Symbol
1
2
1
2
Marking
Type number
FM120-L
FM130-L
FM140-L
FM150-L
FM160-L
FM180-L
FM1100-L
FM1150-L
FM1200-L
Suggested solder pad layout
Marking code
SS12
SS13
SS14
SS15
SS16
SS18
S110
S115
S120
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMA-L
A
0.110 (2.80)
B
0.059 (1.50)
C
0.110 (2.80)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 4
DS-121618
Chip Schottky Barrier Rectifier
FM120-L THRU FM1200-L
Packing information
P
0
P
1
d
E
F
B
W
Formosa MS
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SMA-L
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.90
5.50
2.10
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
4.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 5
DS-121618
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参数对比
与FM130-L-H相近的元器件有:FM140-L-H、FM160-L-H、FM120-L-H、FM1150-L-H、FM150-L-H、FM1100-L-H、FM180-L-H。描述及对比如下:
型号 FM130-L-H FM140-L-H FM160-L-H FM120-L-H FM1150-L-H FM150-L-H FM1100-L-H FM180-L-H
描述 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.5 V 0.5 V 0.7 V 0.5 V 0.92 V 0.7 V 0.85 V 0.85 V
JEDEC-95代码 DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC
JESD-30 代码 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
最大非重复峰值正向电流 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A
元件数量 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最高工作温度 125 °C 125 °C 150 °C 125 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 30 V 40 V 60 V 20 V 150 V 50 V 100 V 80 V
表面贴装 YES YES YES YES YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
厂商名称 - - - FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA
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