FM 150
150 Watts, 28 Volts
Broadcast 88 - 108 MHz
GENERAL DESCRIPTION
The FM 150 is a high power COMMON EMITTER bipolar transistor. It is
designed for FM systems in the frequency band 88-108 MHz. The device has
gold thin-film metallization and diffused ballasting for proven highest MTTF.
Surface passivation eliminates contamination and extends life. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55HT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
165 Watts
55 Volts
4.0 Volts
16 Amps
- 65 to + 150
o
C
+ 150
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
VSWR
BVebo
BVceo
BVcbo
Cob
h
FE
1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
TEST
CONDITIONS
F = 88-108 MHz
Vcc = 28 Volts
MIN
150
TYP
MAX
UNITS
Watts
Watts
dB
%
19
9.0
10
65
3:1
4.0
25
60
140
20
1.06
F = 108 MHz
Ie = 20 mA
Ic = 100 mA
Ic = 100Ma
Vcb = 28V
Ic = 1A, Vce=5V
Volts
Volts
pF
o
θjc
C/W
Note 1: Tc= + 25
o
C unless otherwise specified
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
FM 150
August 1996
