SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 NOVEMBER 1995
FEATURES
* 350 Volt V
CEO
* Gain of 15 at I
C
=100mA
7
FMMT6517
E
C
B
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FMMT6520
517
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
I
CBO
I
EBO
V
CE(sat)
MIN.
350
350
5
50
50
0.3
0.35
0.5
1.0
0.80
0.85
0.90
2.0
20
30
30
20
15
50
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
V
V
V
V
VALUE
350
350
5
500
330
-55 to +150
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=250V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=1mA*
I
C
=20mA, I
B
=2mA*
I
C
=30mA, I
B
=3mA*
I
C
=50mA, I
B
=5mA*
I
C
=10mA, I
B
=1mA*
I
C
=20mA, I
B
=2mA*
I
C
=30mA, I
B
=3mA*
I
C
=100mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
pF
MHz
V
CB
=20V, f=1MHz
I
C
=10mA, V
CE
=20V, f=20MHz
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
V
BE(sat)
V
BE(on)
h
FE
200
200
6
Output Capacitance
Transition Frequency
C
obo
f
T
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 171
