FNB40560 / FNB40560B2
March 2015
FNB40560 / FNB40560B2
Motion SPM
®
45 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 5 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Built-In NTC Thermistor for Temperature Monitoring
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2000 V
rms
/ min.
General Description
FNB40560 / FNB40560B2 is a Motion SPM
®
45 module
providing a fully-featured, high-performance inverter out-
put stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown, ther-
mal monitoring, and fault reporting. The built-in, high-
speed HVIC requires only a single supply voltage and
translates the incoming logic-level gate inputs to the
high-voltage, high-current drive signals required to prop-
erly drive the module's robust short-circuit-rated IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9070 - Motion SPM® 45 Series Users Guide
• AN-9071 - Motion SPM® 45 Series Thermal Perfor-
mance Information
• AN-9072 - Motion SPM® 45 Series Mounting Guid-
ance
• RD-344 - Reference Design (Three Shunt Solution)
• RD-345 - Reference Design (One Shunt Solution)
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FNB40560
FNB40560B2
Device Marking
FNB40560
FNB40560B2
Package
SPMAA-A26
SPMAA-C26
Packing Type
Rail
Rail
Quantity
12
12
©2011 Fairchild Semiconductor Corporation
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FNB40560 / FNB40560B2 Rev. C4
Motion SPM® 45 Series
Integrated Power Functions
• 600 V - 5 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) protection
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) protection
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input
Pin Configuration
V
B(U)
(26)
V
TH
(1)
R
TH
(2)
V
S(U)
(25)
V
B(V)
(24)
V
S(V)
(23)
P(3)
V
B(W)
(22)
V
S(W)
(21)
U(4)
Case Temperature (T
C
)
Detecting Point
V(5)
IN
(UH)
(20)
IN
(VH)
(19)
IN
(WH)
(18)
V
CC(H)
(17)
V
CC(L)
(16)
COM(15)
IN
(UL)
(14)
N
U
(7)
N
V
(8)
N
W
(9)
IN
(VL)
(13)
IN
(WL)
(12)
V
FO
(11)
C
SC
(10)
W(6)
Figure 2. Top View
©2011 Fairchild Semiconductor Corporation
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Motion SPM® 45 Series Rev. C4
Motion SPM® 45 Series
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Pin Name
V
TH
R
TH
P
U
V
W
N
U
N
V
N
W
C
SC
V
FO
IN
(WL)
IN
(VL)
IN
(UL)
COM
V
CC(L)
V
CC(H)
IN
(WH)
IN
(VH)
IN
(UH)
V
S(W)
V
B(W)
V
S(V)
V
B(V)
V
S(U)
V
B(U)
Thermistor Bias Voltage
Pin Description
Series Resistor for the Use of Thermistor (Temperature Detection)
Positive DC-Link Input
Output for U-Phase
Output for V-Phase
Output for W-Phase
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Negative DC-Link Input for W-Phase
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
Fault Output
Signal Input for Low-Side W-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side U-Phase
Common Supply Ground
Low-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Common Bias Voltage for IC and IGBTs Driving
Signal Input for High-Side W-Phase
Signal Input for High-Side V-Phase
Signal Input for High-Side U-Phase
High-Side Bias Voltage Ground for W-Phase IGBT Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for V-Phase IGBT Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
High-Side Bias Voltage for U-Phase IGBT Driving
©2011 Fairchild Semiconductor Corporation
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Motion SPM® 45 Series Rev. C4
Motion SPM® 45 Series
Internal Equivalent Circuit and Input/Output Pins
V
TH
(1)
Thermister
R
TH
(2)
P (3)
(26) V
B(U)
(25) V
S(U)
(24) V
B(V)
(23) V
S(V)
(22) V
B(W)
UVB
UVS
VVB
VVS
WVB
OUT(UH)
UVS
U(4)
(21) V
S(W)
(20) IN
(UH)
(19) IN
(VH)
(18) IN
(WH)
(17) V
CC(H)
WVS
IN(UH)
IN(VH)
IN(WH)
VCC
COM
OUT(VH)
VVS
V (5)
OUT(WH)
WVS
W(6)
(16) V
CC(L)
(15) COM
(14) IN
(UL)
(13) IN
(VL)
(12) IN
(WL)
(11) V
FO
VCC
OUT(UL)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
C(SC)
OUT(VL)
N
V
(8)
N
U
(7)
(10) C
SC
OUT(WL)
N
W
(9)
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
©2011 Fairchild Semiconductor Corporation
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Motion SPM® 45 Series Rev. C4
Motion SPM® 45 Series
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN
V
PN(Surge)
V
CES
I
O,25
I
O,100
I
pk
P
C
T
J
2nd Notes:
unless otherwise specified.)
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Output Phase Current
Output Phase Current
Output Peak Phase Current
Collector Dissipation
Operating Junction Temperature
Conditions
Applied between P - N
U
, N
V
, N
W
Applied between P - N
U
, N
V
, N
W
T
C
= 25°C, T
J
＜
150°C (2nd Note 1)
T
C
= 100°C, T
J
＜
150°C (2nd Note 1)
T
C
= 25°C, T
J
＜
150°C, Under 1 ms Pulse
Width
T
C
= 25°C per Chip
(2nd Note 2)
Rating
450
500
600
5
2.5
7.5
29
-40 ~ 150
Unit
V
V
V
A
A
A
W
°C
1. Sinusoidal PWM at V
PN
= 300 V, V
CC
= V
BS
= 15 V, T
J
＜
150℃, F
SW
= 20 kHz, MI = 0.9, PF = 0.8
2. The maximum junction temperature rating of the power chips integrated within the Motion SPM
®
45 product is 150°C.
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High - Side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current-Sensing Input Voltage
Conditions
Applied between V
CC(H)
, V
CC(L)
- COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
Rating
20
20
Unit
V
V
V
V
mA
V
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, -0.3 ~ V
CC
+ 0.3
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
pin
Applied between C
SC
- COM
-0.3 ~ V
CC
+ 0.3
1
-0.3 ~ V
CC
+ 0.3
Bootstrap Diode Part
Symbol
V
RRM
I
F
I
FP
T
J
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
Conditions
T
C
= 25°C, T
J
＜
150°C
T
C
= 25°C, T
J
＜
150°C, Under 1 ms Pulse
Width
Rating
600
0.50
1.50
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
V
PN(PROT)
T
STG
V
ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5 V
T
J
= 150°C, Non-Repetitive, < 2
μs
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
2000
Unit
V
°C
V
rms
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
2nd Notes:
3. For the measurement point of case temperature (T
C
), please refer to Figure 2.
Parameter
Junction to Case Thermal Resistance
Conditions
Inverter IGBT Part (per 1 / 6 module)
Inverter FWDi Part (per 1 / 6 module)
Min.
-
-
Typ.
-
-
Max.
4.2
5.9
Unit
°C / W
°C / W
©2011 Fairchild Semiconductor Corporation
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Motion SPM® 45 Series Rev. C4
