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FQD10N20LTM

MOSFET 200V N-Ch QFET Logic Level

器件类别：分立半导体    晶体管   

厂商名称：Fairchild

厂商官网：http://www.fairchildsemi.com/

器件标准：

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
DPAK
包装说明
DPAK-3
针数
3
制造商包装代码
3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Samacsys Description
MOSFET N-CH 200V 7.6A DPAK
雪崩能效等级（Eas）
180 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
200 V
最大漏极电流 (Abs) (ID)
7.6 A
最大漏极电流 (ID)
7.6 A
最大漏源导通电阻
0.38 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-252
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
51 W
最大脉冲漏极电流 (IDM)
30.4 A
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQD10N20L
— N-Channel QFET
®
MOSFET
November
2013
FQD10N20L
N-Channel QFET
®
MOSFET
200
V,
7.6
A,
360
mΩ
Description
Features
7.6
A,
200
V, R
DS(on)
=
360
mΩ (Max.) @ V
GS
= 10 V,
I
D
= 3.8 A
Low Gate Charge (Typ.
13
nC)
Low Crss (Typ.
14
pF)
100% Avalanche Tested
Low
Level Gate Drive Requirements Allowing
Direct Operation
Form
Logic Drivers
This N-Channel enhancement mode power MOSFET is
•
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
•
resistance, and to provide superior switching performance
•
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
•
factor correction (PFC), and electronic lamp ballasts.
•
D
D
G
G
S
D-PAK
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD10N20LTM
200
7.6
4.8
30.4
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8” from case for 5 seconds
180
7.6
5.1
5.5
2.5
51
0.4
-55 to +150
300
T
J
, T
STG
T
L
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum
Pad
of 2-oz
Copper),
Max.
Thermal Resistance, Junction to Ambient (*1 in
2
Pad
of 2-oz
Copper),
Max.
FQD10N20LTM
2.48
110
50
o
C/W
Unit
©2000 Fairchild Semiconductor Corporation
FQD10N20L
Rev. C1
1
www.fairchildsemi.com
FQD10N20L
— N-Channel QFET
®
MOSFET
Package Marking and Ordering Information
Part Number
FQD10N20LTM
Top Mark
FQD10N20L
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500
units
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted.
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
200
--
--
--
--
--
--
0.18
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 3.8 A
V
GS
= 5 V, I
D
= 3.8 A
V
DS
= 30 V, I
D
= 3.8 A
1.0
--
--
--
0.29
0.3
9.6
2.0
0.36
0.38
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
640
95
14
830
125
18
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 160 V, I
D
= 10 A,
V
GS
= 5 V
(Note 4)
V
DD
= 100 V, I
D
= 10 A,
R
G
= 25
Ω
--
--
(Note 4)
13
150
50
95
13
2.4
6.1
35
310
110
200
17
--
--
ns
ns
ns
ns
nC
nC
nC
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 7.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 10 A,
dI
F
/ dt = 100 A/µs
--
--
--
--
--
--
--
--
120
0.57
7.6
30.4
1.5
--
--
A
A
V
ns
µC
Notes:
1. Repetitive
rating
:
pulse-width
limited by maximum junction temperature.
2. L = 4.7 mH, I
AS
= 7.6 A, V
DD
= 50 V, R
G
= 25
Ω,
starting
T
J
= 25°C.
3. I
SD
≤
10 A, di/dt
≤
300 A/µs, V
DD
≤
BV
DSS,
starting
T
J
= 25°C.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQD10N20L
Rev. C1
2
www.fairchildsemi.com
FQD10N20L
— N-Channel QFET
®
MOSFET
Typical Characteristics
Top :
10
1
Bottom :
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
10
1
150℃
10
0
10
0
25℃
-55℃
10
-1
※
Notes :
1. 250μ Pulse Test
s
2. T
C
= 25℃
※
Notes :
1. V
DS
= 30V
2. 250μ Pulse Test
s
10
-1
10
-1
10
0
10
1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.6
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
V
GS
= 5V
10
1
V
GS
= 10V
0.8
I
DR
, Reverse Drain Current [A]
1.2
10
0
0.4
※
Note : T
J
= 25℃
150℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ Pulse Test
s
0.0
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
1200
10
V
GS
, Gate-Source Voltage [V]
8
V
DS
= 40V
V
DS
= 100V
Capacitance [pF]
900
C
iss
6
V
DS
= 160V
600
C
oss
※
Notes :
1. V = 0 V
2. f = 1 MHz
4
300
C
rss
2
※
Note : I
D
= 10 A
0
-1
10
0
10
0
10
1
0
4
8
12
16
20
24
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
FQD10N20L
Rev. C1
3
www.fairchildsemi.com
FQD10N20L
— N-Channel QFET
®
MOSFET
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 5 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
8
2
10
Operation in This Area
is Limited by R
DS(on)
6
I
D
, Drain Current [A]
10
1
100
µ
s
1 ms
10 ms
DC
I
D
, Drain Current [A]
10
µ
s
4
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
2
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Z
JC
(t), Thermal Response [
o
C/W]
10
0
D = 0 .5
0 .2
0 .1
0 .0 5
※
N otes :
1 . Z
θ
J C
( t ) = 2 . 4 8
℃
/W M a x .
2 . D u t y F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t )
10
-1
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQD10N20L
Rev. C1
4
www.fairchildsemi.com
查看更多>
参数对比
与FQD10N20LTM相近的元器件有：FQD10N20LTF。描述及对比如下：
型号 FQD10N20LTM FQD10N20LTF
描述 MOSFET 200V N-Ch QFET Logic Level MOSFET 200V N-Ch QFET Logic Level
Brand Name Fairchild Semiconductor Fairchild Semiconductor
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Fairchild Fairchild
零件包装代码 DPAK DPAK
包装说明 DPAK-3 DPAK-3
针数 3 3
制造商包装代码 3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
雪崩能效等级（Eas） 180 mJ 180 mJ
外壳连接 DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 200 V 200 V
最大漏极电流 (Abs) (ID) 7.6 A 7.6 A
最大漏极电流 (ID) 7.6 A 7.6 A
最大漏源导通电阻 0.38 Ω 0.38 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-252 TO-252
JESD-30 代码 R-PSSO-G2 R-PSSO-G2
JESD-609代码 e3 e3
湿度敏感等级 1 1
元件数量 1 1
端子数量 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260
极性/信道类型 N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 51 W 51 W
最大脉冲漏极电流 (IDM) 30.4 A 30.4 A
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 30 NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
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