FQD6N60C 600V N-Channel MOSFET
QFET
FQD6N60C
600V N-Channel MOSFET
Features
• 4 A, 600 V, R
DS(on)
= 2.0
Ω
@ V
GS
= 10 V
• Low gate charge ( typical 16 nC )
• Low Crss ( typical 7 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
D
!
●
◀
▲
●
●
G
S
D-PAK
FQD Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD6N60C
600
4
2.4
16
±
30
300
4.0
8.0
4.5
80
0.78
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.56
50
110
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2005 Fairchild Semiconductor Corporation
1
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQD6N60C
FQD6N60C
Device
FQD6N60CTM
FQD6N60CTF
Package
DPAK
DPAK
Reel Size
380mm
380mm
Tape Width
16mm
16mm
Quantity
2500
2000
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 2.0 A
V
DS
= 40 V, I
D
= 2.0 A
(Note 4)
2.0
--
--
--
1.7
4.8
4.0
2.0
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
620
65
7
810
85
10
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 5.5 A,
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
V
DD
= 300 V, I
D
= 5.5 A,
R
G
= 25
Ω
--
--
--
--
--
--
--
15
45
45
45
16
3.5
6.5
40
100
100
100
20
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34.3 mH, I
AS
= 4.0 A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
4.0 A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 4.0 A
V
GS
= 0 V, I
S
= 5.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
310
2.1
4.0
16
1.4
--
--
A
A
V
ns
µC
FQD6N60C Rev. A
2
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FQD6N60C 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
1
10
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
150 C
-55 C
10
0
o
o
25 C
o
10
-1
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
10
-2
10
-1
10
0
10
1
10
-1
※
Notes :
1. V
DS
= 40V
2. 250µ s Pulse Test
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
6
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
V
GS
= 10V
4
3
I
DR
, Reverse Drain Current [A]
5
10
1
10
0
2
V
GS
= 20V
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
-1
1
※
Note : T
J
= 25
℃
0
0
2
4
6
8
10
12
14
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
12
Figure 6. Gate Charge Characteristics
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 120V
V
DS
= 300V
800
Capacitances [pF]
C
iss
8
V
DS
= 480V
600
C
oss
400
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
6
4
200
C
rss
2
※
Note : I
D
= 5.5A
0
-1
10
10
0
10
1
0
0
4
8
12
16
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQD6N60C Rev. A
3
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FQD6N60C 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 2.0 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
4.5
10
2
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
10
1
10
µ
s
100
µ
s
1 ms
10 ms
DC
I
D
, Drain Current [A]
10
3
3.0
10
0
1.5
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-1
10
0
10
1
10
2
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 11. Transient Thermal Response Curve
Z
θ
JC
Thermal Response
(t),
10
0
D = 0 .5
0 .2
0 .1
※
N o te s :
1 . Z
θ
J C
t) = 1 .5 6
℃
/W M a x .
(
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
t)
(
10
-1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FQD6N60C Rev. A
4
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FQD6N60C 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
R
G
10V
V
GS
R
L
V
DD
V
DS
90%
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
10V
t
p
BV
DSS
1
E
AS
= ---- L I
AS2
--------------------
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
FQD6N60C Rev. A
5
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